Patents by Inventor JIA-HONG MOU

JIA-HONG MOU has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9319001
    Abstract: An exemplary embodiment of the present disclosure illustrates an amplifier circuit comprising an amplifier block and a biasing block. The amplifier block is used to receive an input signal and amplify the input signal to generate an output signal. The a biasing block coupled to the amplifier block is used to provide biasing voltages to bias the amplifier block, and compensate an output gain of the amplifier block before the output gain of the amplifier block is compressed, so as to extend a P1 dB compression point of the amplifier block, wherein the biasing currents are substantially independent to temperature and/or system voltage variation.
    Type: Grant
    Filed: February 24, 2014
    Date of Patent: April 19, 2016
    Assignee: Advanced Semiconductor Engineering Inc.
    Inventors: Jaw-Ming Ding, Rong-Hsang Ho, Jia-Hong Mou
  • Patent number: 9184716
    Abstract: A low noise amplifier is disclosed. The low noise amplifier comprises a current mirror circuit, a bias circuit, a cascode amplifying circuit and a power gain compensating circuit. The current mirror circuit is used for providing a first current and third current. The bias circuit is used for receiving a first current and third current and outputting a first bias voltage and a second bias voltage according to the first current and third current. The cascode amplifying circuit respectively receives the first bias voltage and the second bias voltage, and accordingly to work at an operation bias point. The power gain compensating circuit is used for receiving a RF output signal and accordingly outputs a gain compensating signal to the current mirror circuit so as to dynamically adjust current value of the first current and third current and further to compensates power gain of the low noise amplifier in order to increase 1 dB gain compression point (P1 dB).
    Type: Grant
    Filed: March 28, 2014
    Date of Patent: November 10, 2015
    Assignee: ADVANCED SEMICONDUCTOR ENGINEERING INC.
    Inventors: Jaw-Ming Ding, Jia-Hong Mou
  • Publication number: 20150280672
    Abstract: A low noise amplifier is disclosed. The low noise amplifier comprises a current mirror circuit, a bias circuit, a cascode amplifying circuit and a power gain compensating circuit. The current mirror circuit is used for providing a first current and third current. The bias circuit is used for receiving a first current and third current and outputting a first bias voltage and a second bias voltage according to the first current and third current. The cascode amplifying circuit respectively receives the first bias voltage and the second bias voltage, and accordingly to work at an operation bias point. The power gain compensating circuit is used for receiving a RF output signal and accordingly outputs a gain compensating signal to the current mirror circuit so as to dynamically adjust current value of the first current and third current and further to compensates power gain of the low noise amplifier in order to increase 1 dB gain compression point (P1dB).
    Type: Application
    Filed: March 28, 2014
    Publication date: October 1, 2015
    Applicant: ADVANCED SEMICONDUCTOR ENGINEERING INC.
    Inventors: JAW-MING DING, JIA-HONG MOU
  • Publication number: 20150244327
    Abstract: An exemplary embodiment of the present disclosure illustrates an amplifier circuit comprising an amplifier block and a biasing block. The amplifier block is used to receive an input signal and amplify the input signal to generate an output signal. The a biasing block coupled to the amplifier block is used to provide biasing voltages to bias the amplifier block, and compensate an output gain of the amplifier block before the output gain of the amplifier block is compressed, so as to extend a P1 dB compression point of the amplifier block, wherein the biasing currents are substantially independent to temperature and/or system voltage variation.
    Type: Application
    Filed: February 24, 2014
    Publication date: August 27, 2015
    Applicant: ADVANCED SEMICONDUCTOR ENGINEERING INC.
    Inventors: JAW-MING DING, RONG-HSANG HO, JIA-HONG MOU
  • Patent number: 9013238
    Abstract: A radio frequency (RF) amplifier is disclosed. The RF power amplifier includes a bias circuit, an output-stage circuit and a RF compensation circuit. When a first system voltage is larger than a first voltage threshold value, the bias circuit generates a first current rising slightly. When first system voltage is larger than second voltage threshold value, the RF compensation circuit receives a second circuit rising slightly transmitted from the bias circuit. When the first system voltage is in an operation voltage range, the first current is larger than the second circuit so as to a quiescent operating current of the RF power amplifier is independent of change of the first system voltage. When the first system voltage is larger than a third voltage threshold value, the first current is equal to the second current so as to have the bias current being a zero current to protect the RF power amplifier from over-voltage.
    Type: Grant
    Filed: September 3, 2013
    Date of Patent: April 21, 2015
    Assignee: Advanced Semiconductor Engineering, Inc.
    Inventors: Jaw-Ming Ding, Jia-Hong Mou, Hsin-Chin Chang
  • Publication number: 20140368277
    Abstract: A radio frequency (RF) amplifier is disclosed. The RF power amplifier includes a bias circuit, an output-stage circuit and a RF compensation circuit. When a first system voltage is larger than a first voltage threshold value, the bias circuit generates a first current rising slightly. When first system voltage is larger than second voltage threshold value, the RF compensation circuit receives a second circuit rising slightly transmitted from the bias circuit. When the first system voltage is in an operation voltage range, the first current is larger than the second circuit so as to a quiescent operating current of the RF power amplifier is independent of change of the first system voltage. When the first system voltage is larger than a third voltage threshold value, the first current is equal to the second current so as to have the bias current being a zero current to protect the RF power amplifier from over-voltage.
    Type: Application
    Filed: September 3, 2013
    Publication date: December 18, 2014
    Applicant: ADVANCED SEMICONDUCTOR ENGINEERING INC.
    Inventors: JAW-MING DING, JIA-HONG MOU, HSIN-CHIN CHANG