Patents by Inventor Jia-Hong Ye

Jia-Hong Ye has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11407294
    Abstract: Provided is a hard-top loose-leaf plate structure device for a rear compartment of a pickup truck which includes: a main aluminum extrusion strip; a right aluminum extrusion strip which is inserted in a right circular slot on the right of the main aluminum extrusion strip and is freely rotated at 90° or placed flat at 180° on a right circular lug of the main aluminum extrusion strip; a left aluminum extrusion strip which is inserted in a left circular slot on the left of the main aluminum extrusion strip and is freely rotated at 90° or placed flat at 180° on a left circular lug of the main aluminum extrusion strip; and a T-fixing strip.
    Type: Grant
    Filed: December 24, 2020
    Date of Patent: August 9, 2022
    Inventors: Jia-Li Shen, Jun-Hong Ye
  • Publication number: 20220203813
    Abstract: A buckle locking structure device for the rear compartment cover of pickup trucks, comprising a cross rod aluminum extrusion, a slider, a T-rod, a buckle block, a handle, a T-insertion block and a frame body aluminum extrusion, its features are: when the slide hole channel of slider is installed on the cross rod aluminum extrusion, the slider can move back and forth on the cross rod aluminum extrusion quickly and easily, when the T-rod is connected to buckle block, handle and barrel bolt and fixed to the slider, a buckle locking structure device is formed, the buckle locking structure device is equivalent to that the slider can be moved quickly and easily on the cross rod aluminum extrusion to the region to be buckled, with the groove face on the two side walls inside the U-slideway of handle and the structure of shoulder edge part slot of the groove face, when the handle is to fasten down, the shoulder edge part slot of groove face formed on both side walls inside the U-slideway of handle can fasten along th
    Type: Application
    Filed: December 24, 2020
    Publication date: June 30, 2022
    Inventors: JIA-LI SHEN, JUN-HONG YE
  • Publication number: 20220203810
    Abstract: Provided is a hard-top loose-leaf plate structure device for a rear compartment of a pickup truck which includes: a main aluminum extrusion strip; a right aluminum extrusion strip which is inserted in a right circular slot on the right of the main aluminum extrusion strip and is freely rotated at 90° or placed flat at 180° on a right circular lug of the main aluminum extrusion strip; a left aluminum extrusion strip which is inserted in a left circular slot on the left of the main aluminum extrusion strip and is freely rotated at 90° or placed flat at 180° on a left circular lug of the main aluminum extrusion strip; and a T-fixing strip.
    Type: Application
    Filed: December 24, 2020
    Publication date: June 30, 2022
    Inventors: JIA-LI SHEN, JUN-HONG YE
  • Patent number: 11362216
    Abstract: An active device substrate includes a substrate, a first active device, and a second active device. The first active device includes a first gate, a crystallized metal oxide layer, a first insulation layer, a first source, and a first drain. The crystallized metal oxide layer is located on the first gate. The first insulation layer is sandwiched between the crystallized metal oxide layer and the first gate. An area from the top surface of the crystallized metal oxide layer to the bottom surface of the crystallized metal oxide layer is observed via a selected area diffraction mode of a transmission electron microscope, and a diffraction pattern of a crystallized phase can be observed. The second active device includes a second gate, a silicon semiconductor layer, a second source, and a second drain. A manufacturing method of an active device substrate is further provided.
    Type: Grant
    Filed: September 30, 2020
    Date of Patent: June 14, 2022
    Assignee: Au Optronics Corporation
    Inventor: Jia-Hong Ye
  • Publication number: 20210343526
    Abstract: A manufacturing method of a crystallized metal oxide layer includes: providing a substrate; forming a first insulation layer on the substrate; forming a first metal oxide layer on the first insulation layer; forming a second metal oxide layer on the first insulation layer; forming a second insulation layer on the first metal oxide layer and the second metal oxide layer; forming a silicon layer on the second insulation layer; performing a first laser process on a portion of the silicon layer covering the first metal oxide layer; and performing a second laser process on a portion of the silicon layer covering the second metal oxide layer. An active device and a manufacturing method thereof are also provided.
    Type: Application
    Filed: July 14, 2021
    Publication date: November 4, 2021
    Applicant: Au Optronics Corporation
    Inventors: Jia-Hong Ye, Ching-Liang Huang
  • Patent number: 11134346
    Abstract: A backlight module and display device using the same are provided. The backlight module has a light guide plate. A piezoelectric module is arranged at the outer side of the backside surface of the light guide plate and configured to produce a vibration. The vibration is directly or indirectly transmitted to a resonator, for example, a light guide plate or a bezel, to produce resonance, and a space to which the backside surface is oriented is used as a resonance cavity. By means of the arrangement, the screen-to-body ratio of electronic products and the sound quality can be improved while taking into account the thickness and volume of the electronic products.
    Type: Grant
    Filed: August 12, 2020
    Date of Patent: September 28, 2021
    Assignee: AU OPTRONICS CORPORATION
    Inventors: Jia-Hong Ye, Cheng-Syun Sie
  • Patent number: 11094540
    Abstract: A manufacturing method of a crystallized metal oxide layer includes: providing a substrate; forming a first insulation layer on the substrate; forming a first metal oxide layer on the first insulation layer; forming a second metal oxide layer on the first insulation layer; forming a second insulation layer on the first metal oxide layer and the second metal oxide layer; forming a silicon layer on the second insulation layer; performing a first laser process on a portion of the silicon layer covering the first metal oxide layer; and performing a second laser process on a portion of the silicon layer covering the second metal oxide layer. An active device and a manufacturing method thereof are also provided.
    Type: Grant
    Filed: March 29, 2019
    Date of Patent: August 17, 2021
    Assignee: Au Optronics Corporation
    Inventors: Jia-Hong Ye, Ching-Liang Huang
  • Patent number: 10969618
    Abstract: An opposite substrate including a substrate, first light-shielding patterns, second light-shielding patterns, a planarization layer and support members is provided. The support members are located in primary support regions and secondary support regions of the opposite substrate. The first light-shielding patterns respectively extend along a first direction, and a material of the first light-shielding patterns includes an organic material. The second light-shielding patterns respectively extend along a second direction, and a material of the second light-shielding patterns includes metal. The first light-shielding patterns and the second light-shielding patterns are respectively located at opposite sides of the planarization layer. Alternatively, the first light-shielding patterns and the second light-shielding patterns are located at the same side of the planarization layer, and the planarization layer has openings respectively overlapped with the support members located in the secondary support regions.
    Type: Grant
    Filed: April 23, 2020
    Date of Patent: April 6, 2021
    Assignee: Au Optronics Corporation
    Inventors: Ssu-Hui Lu, Jia-Hong Ye, Kuo-Yu Huang
  • Publication number: 20210058711
    Abstract: A backlight module and display device using the same are provided. The backlight module has a light guide plate. A piezoelectric module is arranged at the outer side of the backside surface of the light guide plate and configured to produce a vibration. The vibration is directly or indirectly transmitted to a resonator, for example, a light guide plate or a bezel, to produce resonance, and a space to which the backside surface is oriented is used as a resonance cavity. By means of the arrangement, the screen-to-body ratio of electronic products and the sound quality can be improved while taking into account the thickness and volume of the electronic products.
    Type: Application
    Filed: August 12, 2020
    Publication date: February 25, 2021
    Inventors: Jia-Hong YE, Cheng-Syun SIE
  • Publication number: 20210013344
    Abstract: An active device substrate includes a substrate, a first active device, and a second active device. The first active device includes a first gate, a crystallized metal oxide layer, a first insulation layer, a first source, and a first drain. The crystallized metal oxide layer is located on the first gate. The first insulation layer is sandwiched between the crystallized metal oxide layer and the first gate. An area from the top surface of the crystallized metal oxide layer to the bottom surface of the crystallized metal oxide layer is observed via a selected area diffraction mode of a transmission electron microscope, and a diffraction pattern of a crystallized phase can be observed. The second active device includes a second gate, a silicon semiconductor layer, a second source, and a second drain. A manufacturing method of an active device substrate is further provided.
    Type: Application
    Filed: September 30, 2020
    Publication date: January 14, 2021
    Applicant: Au Optronics Corporation
    Inventor: Jia-Hong Ye
  • Patent number: 10840380
    Abstract: An active device substrate includes a substrate, a first active device, and a second active device. The first active device includes a first gate, a crystallized metal oxide layer, a first insulation layer, a first source, and a first drain. The crystallized metal oxide layer is located on the first gate. The first insulation layer is sandwiched between the crystallized metal oxide layer and the first gate. An area from the top surface of the crystallized metal oxide layer to the bottom surface of the crystallized metal oxide layer is observed via a selected area diffraction mode of a transmission electron microscope, and a diffraction pattern of a crystallized phase can be observed. The second active device includes a second gate, a silicon semiconductor layer, a second source, and a second drain. A manufacturing method of an active device substrate is further provided.
    Type: Grant
    Filed: April 19, 2019
    Date of Patent: November 17, 2020
    Assignee: Au Optronics Corporation
    Inventor: Jia-Hong Ye
  • Patent number: 10714631
    Abstract: The present invention provides two methods for crystallizing a metal oxide semiconductor layer and a semiconductor structure. The first crystallization method is treating an amorphous metal oxide semiconductor layer including indium with oxygen at a pressure of about 550 mtorr to about 5000 mtorr and at a temperature of about 200° C. to about 750° C. The second crystallization method is, firstly, sequentially forming a first amorphous metal oxide semiconductor layer, an aluminum layer, and a second amorphous metal oxide semiconductor layer on a substrate, and, secondly, treating the first amorphous metal oxide semiconductor layer, the aluminum layer, and the second amorphous metal oxide semiconductor layer with an inert gas at a temperature of about 350° C. to about 650° C.
    Type: Grant
    Filed: September 19, 2019
    Date of Patent: July 14, 2020
    Assignee: AU OPTRONICS CORPORATION
    Inventor: Jia-Hong Ye
  • Patent number: 10566357
    Abstract: The present invention provides a method for crystallizing a metal oxide semiconductor layer, a semiconductor structure, a method for manufacturing a semiconductor structure, an active array substrate, and an indium gallium zinc oxide crystal. The crystallization method includes the following steps: forming an amorphous metal oxide semiconductor layer on a substrate; forming an oxide layer on the amorphous metal oxide semiconductor layer; forming an amorphous silicon layer on the oxide layer; and irradiating the amorphous silicon layer by using a laser, so as to heat the amorphous silicon layer, where the heated amorphous silicon layer heats the amorphous metal oxide semiconductor layer, so that the amorphous metal oxide semiconductor layer is converted into a crystallized metal oxide semiconductor layer.
    Type: Grant
    Filed: December 11, 2017
    Date of Patent: February 18, 2020
    Assignee: AU OPTRONICS CORPORATION
    Inventors: Jia-Hong Ye, Ching-Liang Huang
  • Publication number: 20200013895
    Abstract: The present invention provides two methods for crystallizing a metal oxide semiconductor layer and a semiconductor structure. The first crystallization method is treating an amorphous metal oxide semiconductor layer including indium with oxygen at a pressure of about 550 mtorr to about 5000 mtorr and at a temperature of about 200° C. to about 750° C. The second crystallization method is, firstly, sequentially forming a first amorphous metal oxide semiconductor layer, an aluminum layer, and a second amorphous metal oxide semiconductor layer on a substrate, and, secondly, treating the first amorphous metal oxide semiconductor layer, the aluminum layer, and the second amorphous metal oxide semiconductor layer with an inert gas at a temperature of about 350° C. to about 650° C.
    Type: Application
    Filed: September 19, 2019
    Publication date: January 9, 2020
    Inventor: Jia-Hong Ye
  • Publication number: 20190326440
    Abstract: An active device substrate includes a substrate, a first active device, and a second active device. The first active device includes a first gate, a crystallized metal oxide layer, a first insulation layer, a first source, and a first drain. The crystallized metal oxide layer is located on the first gate. The first insulation layer is sandwiched between the crystallized metal oxide layer and the first gate. An area from the top surface of the crystallized metal oxide layer to the bottom surface of the crystallized metal oxide layer is observed via a selected area diffraction mode of a transmission electron microscope, and a diffraction pattern of a crystallized phase can be observed. The second active device includes a second gate, a silicon semiconductor layer, a second source, and a second drain. A manufacturing method of an active device substrate is further provided.
    Type: Application
    Filed: April 19, 2019
    Publication date: October 24, 2019
    Applicant: Au Optronics Corporation
    Inventor: Jia-Hong Ye
  • Patent number: 10446691
    Abstract: The present invention provides two methods for crystallizing a metal oxide semiconductor layer and a semiconductor structure. The first crystallization method is treating an amorphous metal oxide semiconductor layer including indium with oxygen at a pressure of about 550 mtorr to about 5000 mtorr and at a temperature of about 200° C. to about 750° C. The second crystallization method is, firstly, sequentially forming a first amorphous metal oxide semiconductor layer, an aluminum layer, and a second amorphous metal oxide semiconductor layer on a substrate, and, secondly, treating the first amorphous metal oxide semiconductor layer, the aluminum layer, and the second amorphous metal oxide semiconductor layer with an inert gas at a temperature of about 350° C. to about 650° C.
    Type: Grant
    Filed: June 28, 2017
    Date of Patent: October 15, 2019
    Assignee: AU OPTRONICS CORPORATION
    Inventor: Jia-Hong Ye
  • Publication number: 20190304779
    Abstract: A manufacturing method of a crystallized metal oxide layer includes: providing a substrate; forming a first insulation layer on the substrate; forming a first metal oxide layer on the first insulation layer; forming a second metal oxide layer on the first insulation layer; forming a second insulation layer on the first metal oxide layer and the second metal oxide layer; forming a silicon layer on the second insulation layer; performing a first laser process on a portion of the silicon layer covering the first metal oxide layer; and performing a second laser process on a portion of the silicon layer covering the second metal oxide layer. An active device and a manufacturing method thereof are also provided.
    Type: Application
    Filed: March 29, 2019
    Publication date: October 3, 2019
    Applicant: Au Optronics Corporation
    Inventors: Jia-Hong Ye, Ching-Liang Huang
  • Patent number: 10312206
    Abstract: An array substrate includes a device array, a bonding pad, and at least one support structure. The bonding pad is located in a bonding area and is electrically connected to the device array. A horizontal distance between the at least one support structure and the bonding pad is between 5 ?m and 1000 ?m.
    Type: Grant
    Filed: December 13, 2017
    Date of Patent: June 4, 2019
    Assignee: Au Optronics Corporation
    Inventors: Jia-Hong Ye, Pin-Fan Wang
  • Publication number: 20190081124
    Abstract: An array substrate includes a device array, a bonding pad, and at least one support structure. The bonding pad is located in a bonding area and is electrically connected to the device array. A horizontal distance between the at least one support structure and the bonding pad is between 5 ?m and 1000 ?m.
    Type: Application
    Filed: December 13, 2017
    Publication date: March 14, 2019
    Applicant: Au Optronics Corporation
    Inventors: Jia-Hong Ye, Pin-Fan Wang
  • Patent number: 10007168
    Abstract: A liquid crystal lens including a first substrate, a first electrode disposed on the first substrate, a second electrode disposed on the first substrate, a first conductive pattern disposed on the first substrate, a second conductive pattern disposed on the first substrate, a second substrate disposed opposite to the first substrate, a common electrode disposed on the second substrate, and a liquid crystal layer located between the first substrate and the second substrate is provided. The first conductive pattern and the second conductive pattern are electrically connected between the first electrode and the second electrode. A resistivity of the first conductive pattern and a resistivity of the second conductive pattern are greater than a resistivity of the first electrode and a resistivity of the second electrode. At least a portion of the at least one second conductive pattern is disposed into the at least one first conductive pattern.
    Type: Grant
    Filed: February 14, 2017
    Date of Patent: June 26, 2018
    Assignee: AU OPTRONICS CORPORATION
    Inventors: Jia-Hong Ye, Hsueh-Fang Yeh