Abstract: Embodiments of semiconductor devices and methods for forming the semiconductor devices are disclosed. In an example, a method for forming device openings includes forming a material layer over a first region and a second region of a substrate, the first region being adjacent to the second region, forming a mask layer over the material layer, the mask layer covering the first region and the second region, and forming a patterning layer over the mask layer. The patterning layer covers the first region and the second region and including openings corresponding to the first region. The plurality of openings includes a first opening adjacent to a boundary between the first region and the second region and a second opening further away from the boundary. Along a plane parallel to a top surface of the substrate, a size of the first opening is greater than a size of the second opening.

Abstract: The disclosure relates to a thin film transistor and a method for making the same. The thin film transistor includes a substrate; a gate on the substrate; a dielectric layer on the gate, wherein the dielectric layer includes a first sub-dielectric layer and a second sub-dielectric layer stacked on one another, and the first sub-dielectric layer is a first oxide dielectric layer formed by magnetron sputtering and in direct contact with the gate; a semiconductor layer on the dielectric layer, wherein the semiconductor layer includes nano-scaled semiconductor materials; and a source and a drain, wherein the source and the drain are on the dielectric layer, spaced apart from each other, and electrically connected to the semiconductor layer. The thin film transistor almost has no current hysteresis.

Abstract: The disclosure relates to a thin film transistor and a method for making the same. The thin film transistor includes a substrate; a semiconductor layer on the substrate, wherein the semiconductor layer includes nano-scaled semiconductor materials; a source and a drain, wherein the source and the drain are on the substrate, spaced apart from each other, and electrically connected to the semiconductor layer; a dielectric layer on the semiconductor layer, wherein the dielectric layer includes a first sub-dielectric layer and a second sub-dielectric layer stacked on one another, and the first sub-dielectric layer is a first oxide dielectric layer grown by magnetron sputtering; and a gate in direct contact with the first sub-dielectric layer. The thin film transistor almost has no current hysteresis.

Abstract: The disclosure relates to a logic circuit. The logic circuit includes two ambipolar thin film transistors. Each of the two ambipolar thin film transistors includes a substrate; a semiconductor layer located on the substrate and including nano-scaled semiconductor materials; a source and a drain, wherein the source and the drain are located on the substrate, spaced apart from each other, and electrically connected to the semiconductor layer; a dielectric layer located on the substrate and covering the semiconductor layer, wherein the dielectric layer includes a normal dielectric layer and an abnormal dielectric layer stacked on one another, and the abnormal dielectric layer is an oxide dielectric layer grown by magnetron sputtering; and a gate in direct contact with the abnormal dielectric layer. The two ambipolar thin film transistors share the same substrate, the same gate, and the same drain.

Abstract: The disclosure relates to a logic circuit. The logic circuit includes a n-type thin film transistor and a p-type thin film transistor. Each thin film transistor includes a substrate; a semiconductor layer including nano-scaled semiconductor materials; a source and a drain, wherein the source and the drain are spaced apart from each other, and electrically connected to the semiconductor layer; a dielectric layer covering the semiconductor layer, wherein the dielectric layer includes a normal dielectric layer and an abnormal dielectric layer stacked on one another, and the abnormal dielectric layer is an oxide dielectric layer grown by magnetron sputtering; and a gate in direct contact with the abnormal dielectric layer. The n-type thin film transistor and the p-type thin film transistor share the same substrate and the same gate.

Abstract: The disclosure relates to a thin film transistor and a method for making the same. The thin film transistor includes a substrate; a gate on the substrate; a dielectric layer on the gate, wherein the dielectric layer includes a first sub-dielectric layer and a second sub-dielectric layer stacked on one another, and the first sub-dielectric layer is a first oxide dielectric layer formed by magnetron sputtering and in direct contact with the gate; a semiconductor layer on the dielectric layer, wherein the semiconductor layer includes nano-scaled semiconductor materials; and a source and a drain, wherein the source and the drain are on the dielectric layer, spaced apart from each other, and electrically connected to the semiconductor layer. The thin film transistor almost has no current hysteresis.

Abstract: The disclosure relates to a thin film transistor and a method for making the same. The thin film transistor includes a substrate; a gate located on the substrate; a dielectric layer located on the gate; a semiconductor layer located on the dielectric layer and including nano-scaled semiconductor materials; and a drain and a source spaced apart from each other and electrically connected to the semiconductor layer. The dielectric layer is an oxide layer formed by magnetron sputtering and in direct contact with the gate. The thin film transistor has inverse current hysteresis.

Abstract: The disclosure relates to a logic circuit. The logic circuit includes a n-type thin film transistor and a p-type thin film transistor. Each thin film transistor includes a substrate; a semiconductor layer including nano-scaled semiconductor materials; a source and a drain, wherein the source and the drain are spaced apart from each other, and electrically connected to the semiconductor layer; a dielectric layer covering the semiconductor layer, wherein the dielectric layer includes a normal dielectric layer and an abnormal dielectric layer stacked on one another, and the abnormal dielectric layer is an oxide dielectric layer grown by magnetron sputtering; and a gate in direct contact with the abnormal dielectric layer. The n-type thin film transistor and the p-type thin film transistor share the same substrate and the same gate.

Abstract: The disclosure relates to a logic circuit. The logic circuit includes two ambipolar thin film transistors. Each of the two ambipolar thin film transistors includes a substrate; a semiconductor layer located on the substrate and including nano-scaled semiconductor materials; a source and a drain, wherein the source and the drain are located on the substrate, spaced apart from each other, and electrically connected to the semiconductor layer; a dielectric layer located on the substrate and covering the semiconductor layer, wherein the dielectric layer includes a normal dielectric layer and an abnormal dielectric layer stacked on one another, and the abnormal dielectric layer is an oxide dielectric layer grown by magnetron sputtering; and a gate in direct contact with the abnormal dielectric layer. The two ambipolar thin film transistors share the same substrate, the same gate, and the same drain.

Abstract: The disclosure relates to a thin film transistor and a method for making the same. The thin film transistor includes a substrate; a semiconductor layer on the substrate, wherein the semiconductor layer includes nano-scaled semiconductor materials; a source and a drain, wherein the source and the drain are on the substrate, spaced apart from each other, and electrically connected to the semiconductor layer; a dielectric layer on the semiconductor layer, wherein the dielectric layer includes a first sub-dielectric layer and a second sub-dielectric layer stacked on one another, and the first sub-dielectric layer is a first oxide dielectric layer grown by magnetron sputtering; and a gate in direct contact with the first sub-dielectric layer. The thin film transistor almost has no current hysteresis.

Abstract: The disclosure relates to a thin film transistor and a method for making the same. The thin film transistor includes a substrate; a semiconductor layer on the substrate, wherein the semiconductor layer includes nano-scaled semiconductor materials; a source and a drain, wherein the source and the drain are on the substrate, spaced apart from each other, and electrically connected to the semiconductor layer; a dielectric layer on the semiconductor layer, wherein the dielectric layer is an oxide dielectric layer formed by magnetron sputtering; and a gate in direct contact with the dielectric layer. The thin film transistor has inverse current hysteresis.

Abstract: A method for a flexible business task flow includes: identifying a task flow that includes an order in which to perform a plurality of tasks; receiving an event trigger indicating that a first task of the plurality of tasks has been performed; responsive to receiving the event trigger indicating that the first task has been performed, determining whether a task object associated with the first task includes one or more task routing rules; and determining to perform a second task of the plurality of tasks, wherein if the task object is determined to include one or more task routing rules, the second task is determined according to the one or more task routing rules, and wherein if the task is determined to not include any task routing rules, the second task is determined according to the order of the identified task flow.

Abstract: A method, apparatus, and/or computer program product manages sessions of different websites. Respective session identifiers of a plurality of websites are recorded, where each of the respective session identifiers of the plurality of websites identifies a session established in response to a page open operation for a respective website, and where pages of the plurality of websites are integrated into one page on one website. An operation request for a page of a first website of the plurality of websites is received. In response to receiving the operation request, a session synchronization request message that requests that a session of the first website be synchronized with sessions of the plurality of websites is generated and transmitted from the first website to other websites from the plurality of websites.

Abstract: Managing database indexes includes creating a main index and creating at least one service index that is configured for recording a change to a node to be updated in the main index. Managing database indexes also includes detecting whether an operation that involves the main index and is performed on the database appears in the database, and maintaining the main index using at least one service index in response to the operation that involves the main index and is performed on the database, appearing in the database. The maintaining is performed based on changes to a node to be updated in the main index that are recorded in the at least one service node.

Abstract: The present invention relates to the technical field of data or file synchronization. In particular, the present invention relates to a method and system for data synchronization using character string matching. Provided are a method, computer program product, and system for data synchronization between a source node and target node. An old copy and a new copy of data to be synchronized is received. A block map is generated according to the difference determined using character string matching between the old copy and the new copy. The block map, which includes the position information of unchanged blocks and the position information and contents of changed blocks, is transmitted to a target node.

Abstract: A method, apparatus, and/or computer program product manages sessions of different websites. Respective session identifiers of a plurality of websites are recorded, where each of the respective session identifiers of the plurality of websites identifies a session established in response to a page open operation for a respective website, and where pages of the plurality of websites are integrated into one page on one website. An operation request for a page of a first website of the plurality of websites is received. In response to receiving the operation request, a session synchronization request message that requests that a session of the first website be synchronized with sessions of the plurality of websites is generated and transmitted from the first website to other websites from the plurality of websites.

Abstract: The present invention relates to the technical field of data or file synchronization. In particular, the present invention relates to a method and system for data synchronization using character string matching. Provided are a method, computer program product, and system for data synchronization between a source node and target node. An old copy and a new copy of data to be synchronized is received. A block map is generated according to the difference determined using character string matching between the old copy and the new copy. The block map, which includes the position information of unchanged blocks and the position information and contents of changed blocks, is transmitted to a target node.

Abstract: Managing database indexes includes creating a main index and creating at least one service index that is configured for recording a change to a node to be updated in the main index. Managing database indexes also includes detecting whether an operation that involves the main index and is performed on the database appears in the database, and maintaining the main index using at least one service index in response to the operation that involves the main index and is performed on the database, appearing in the database. The maintaining is performed based on changes to a node to be updated in the main index that are recorded in the at least one service node.