Abstract: A method for minimizing the dimension of a contact forms a thick dielectric layer on a provided substrate first, and then forms a contact on the first dielectric layer and expose the substrate by performing a slope etching process. The contact with the target contact size is obtained by partially removing the thick dielectric layer. Since the target contact size is obtained by a self-aligned method, the upper diameter of the contact is not limited by a conventional fabrication process. Furthermore, after a contact is formed, it is optional to fill the contact with filler. Even after a desired contact is formed in the case that filler is used, the remains of the filler can be either kept or removed depending on the conductivity of the filler.