Abstract: A surface region of a semiconductor material on a surface of a semiconductor device is doped during its manufacture, by coating the surface region of the semiconductor material with a dielectric material surface layer and locally heating the surface of the semiconductor material in an area to be doped to locally melt the semiconductor material with the melting being performed in the presence of a dopant source. The heating is performed in a controlled manner such that a region of the surface of the semiconductor material in the area to be doped is maintained in a molten state without refreezing for a period of time greater than one microsecond and the dopant from the dopant source is absorbed into the molten semiconductor. The semiconductor device includes a semiconductor material structure in which a junction is formed and may incorporate a multi-layer anti-reflection coating.

Abstract: The present invention discloses a method and system for processing semantic fragments. Some embodiments of the present invention provides a method for processing semantic fragments. The method comprises: obtaining a plurality of groups of semantic fragments, the plurality of groups of semantic fragments at least including a first group of semantic fragments generated from a first data processing flow and a second group of semantic fragments generated from a second data processing flow, the first data processing flow being different from the second data processing flow; and merging the first group of semantic fragment and the second group of semantic fragment based on semantic equivalence. A corresponding system is also disclosed.

Abstract: The present invention discloses a method and system for processing semantic fragments. Some embodiments of the present invention provides a method for processing semantic fragments. The method comprises: obtaining a plurality of groups of semantic fragments, the plurality of groups of semantic fragments at least including a first group of semantic fragments generated from a first data processing flow and a second group of semantic fragments generated from a second data processing flow, the first data processing flow being different from the second data processing flow; and merging the first group of semantic fragment and the second group of semantic fragment based on semantic equivalence. A corresponding system is also disclosed.

Abstract: A method of forming an oxide layer on an exposed surface of a semiconductor device which contains a p-n junction is disclosed, the method comprising: immersing the exposed surface of the semiconductor device in an electrolyte; producing an electric field in the semiconductor device such that the p-n junction is forward-biased and the exposed surface is anodic; and electrochemically oxidizing the exposed surface to form an oxide layer.

Abstract: The present invention discloses a method and system for processing semantic fragments. Some embodiments of the present invention provides a method for processing semantic fragments. The method comprises: obtaining a plurality of groups of semantic fragments, the plurality of groups of semantic fragments at least including a first group of semantic fragments generated from a first data processing flow and a second group of semantic fragments generated from a second data processing flow, the first data processing flow being different from the second data processing flow; and merging the first group of semantic fragment and the second group of semantic fragment based on semantic equivalence. A corresponding system is also disclosed.

Abstract: A method of depositing metal on an exposed surface of a p-type semiconductor region of a semiconductor device comprising a p-n junction is disclosed, the method comprising: immersing the exposed surface of the p-type semiconductor region on which the metal is to be deposited in a solution of metal ions; producing an electric field in the semiconductor device such that the p-n junction is forward biased; electrochemically depositing the metal on the exposed surface of the p-type semiconductor region of the semiconductor device by reduction of metal ions in the solution.

Abstract: A method of depositing metal on an exposed surface of a p-type semiconductor region of a semiconductor device comprising a p-n junction is disclosed, the method comprising: immersing the exposed surface of the p-type semiconductor region on which the metal is to be deposited in a solution of metal ions; producing an electric field in the semiconductor device such that the p-n junction is forward biased; electrochemically depositing the metal on the exposed surface of the p-type semiconductor region of the semiconductor device by reduction of metal ions in the solution.

Abstract: A method of forming an oxide layer on an exposed surface of a semiconductor device which contains a p-n junction is disclosed, the method comprising: immersing the exposed surface of the semiconductor device in an electrolyte; producing an electric field in the semiconductor device such that the p-n junction is forward-biased and the exposed surface is anodic; and electrochemically oxidising the exposed surface to form an oxide layer.

Abstract: A method and program are disclosed for scheduling operations in a digital processing system. The method includes monitoring one or more operations to be scheduled, sorting the operations based on their respective deadline processing cycles for scheduling, and storing the sorted operations in a queue. The operations are scheduled by adjusting their schedule time based on the updated system resource usage.

Abstract: A thin film silicon solar cell is provided on a glass substrate, the glass having a textured surface, including larger scale surface features and smaller scale surface features. Over the surface is deposited a thin barrier layer which also serves as an anti-reflection coating. The barrier layer may be a silicon nitride layer for example and will be 70 nm±20% in order to best achieve its anti-reflection function. Over the barrier layer is formed an essentially conformal silicon film having a thickness which is less than the dimensions of the larger scale features of the glass surface and of a similar dimension to the smaller scale features of the glass surface.

Abstract: A thin film silicon solar cell is provided on a glass substrate, is illustrated, the glass having a textured surface, including larger scale surface features and smaller scale surface features. Over the surface is deposited a thin barrier layer which also serves as an anti-reflection coating. The barrier layer may be a silicon nitride layer for example and will be 70 nm ±20% in order to best achieve its anti-reflection function. Over the barrier layer is formed an essentially conformal silicon film having a thickness which is less than the dimensions of the larger scale features of the glass surface and of a similar dimension to the smaller scale features of the glass surface.

Abstract: A method for making a digital versatile disc (DVD) includes providing top and bottom substrates, each of the top and bottom substrates being disc-shaped and having a pitted surface. A reflective layer is formed over the pitted surface of the top substrate and a semireflective layer is formed over the pitted surface of the bottom substrate. A wetting promoter is applied over the reflective layer of the top substrate and, if desired, over the semireflective layer of the bottom substrate. The top and bottom substrates are bonded together with an adhesive material using a simple drop technique to form a DVD. The wetting promoter enhances wetting of the adhesive material on the bonded surfaces of the substrates.