Abstract: An integrated circuit copper wire bond connection is provided having a copper ball (32) bonded directly to an aluminum bond pad (31) formed on a low-k dielectric layer (30) to form a bond interface structure for the copper ball characterized by a first plurality of geometric features to provide thermal cycling reliability, including an aluminum minima feature (Z1, Z2) located at an outer peripheral location (42) under the copper ball to prevent formation and/or propagation of cracks in the aluminum bond pad.

Abstract: A packaged semiconductor device has a lead frame, a semiconductor die, and bond wires. The lead frame has a two-dimensional array of leads with a subset of interior leads located in the interior of the array that do not extend to the perimeter of the array. The bond wires are connected to the semiconductor die and respective ones of the leads of the array.

Abstract: An integrated circuit copper wire bond connection is provided having a copper ball (32) bonded directly to an aluminum bond pad (31) formed on a low-k dielectric layer (30) to form a bond interface structure for the copper ball characterized by a first plurality of geometric features to provide thermal cycling reliability, including an aluminum minima feature (Z1, Z2) located at an outer peripheral location (42) under the copper ball to prevent formation and/or propagation of cracks in the aluminum bond pad.

Abstract: A semiconductor device includes a lead frame having a flag and leads surrounding the flag. The flag includes a first die attach area and an interposer area. An insulated layer with at least one conductive trace is formed on the interposer area.

Abstract: A lead frame for a packaged semiconductor device has multiple, configurable power bars that can be selectively electrically connected, such as with bond wires, to each other and/or to other leads of the lead frame to customize the lead frame for different package designs. One or more of the configurable power bars may extend into one or more cut-out regions in a die paddle of the lead frame, which allows for short bond wires to be used to connect the power bars to die pads of a semiconductor die mounted on the die paddle.

Abstract: A wire bonded electrical interconnection includes a first electrical contact, a second electrical contact, and a bond wire having a first end bonded to the first electrical contact, a second end bonded to the second electrical contact, and a central portion connecting the first and second ends. The central portion includes notches formed during a wire bonding process, with each notch having at least two corners.

Abstract: A capillary bonding tool for wire bonding includes a first section, a second section and a bonding section. The first section has a first outer peripheral sidewall, an opposing first inner sidewall that extends generally parallel to the central longitudinal axis, and a first opening surrounded by the first inner sidewall. The second section has a second outer peripheral sidewall, an opposing second inner sidewall that extends at an angle with respect to the central longitudinal axis, and a second tapered opening surrounded by the second inner sidewall. The bonding section has a peripheral ridge extending axially outwardly from the second inner sidewall of the second section. The peripheral ridge has a third outer peripheral sidewall, a third inner tubular sidewall that extends generally parallel to the central longitudinal axis and radially outwardly of the first inner sidewall, and a third opening surrounded by the third inner tubular sidewall.

Abstract: A semiconductor die has outer leads with an outer lead external connection section and an outer lead bonding section. Inner leads are spaced from the outer leads. Each of the inner leads has an inner lead external connection section spaced and downset from an inner lead bonding section. A non-electrically conductive die mount is molded onto upper surface areas of each inner lead external connection section. A semiconductor die is mounted on the non-electrically conductive die mount and bond wire provide interconnects for selectively electrically connecting bonding pads of the die to the inner lead bonding sections and at least one outer lead bonding section. A mold compound covers the semiconductor die, the bond wires, and the outer and inner lead bonding sections.

Abstract: A method of making an electrical connection includes passing a bond wire through a wire bonding system having a wire polisher and a wire bonding tool. The wire polisher removes contamination from a first portion of the bond wire. A first bond is then formed by bonding the first portion of the bond wire to a first contact such that the bond wire and the first device are electrically connected. A second bond is then formed by bonding a second portion of the bond wire to a second contact such that the first contact and the second contact are electrically connected.

Abstract: A semiconductor die has outer leads with an outer lead external connection section and an outer lead bonding section. Inner leads are spaced from the outer leads. Each of the inner leads has an inner lead external connection section spaced and downset from an inner lead bonding section. A non-electrically conductive die mount is molded onto upper surface areas of each inner lead external connection section. A semiconductor die is mounted on the non-electrically conductive die mount and bond wire provide interconnects for selectively electrically connecting bonding pads of the die to the inner lead bonding sections and at least one outer lead bonding section. A mold compound covers the semiconductor die, the bond wires, and the outer and inner lead bonding sections.