Abstract: The present invention discloses a double-gate trench-type insulated-gate bipolar transistor device. A first trench and a second trench, which are located in a P-type doped well layer, and separate from each other, are extended into a lightly-doped N-type drift layer. A heavily-doped P-type source region and a heavily-doped N-type source region, which are sequentially connected, are located between the first trench and the second trench, and are arranged at an upper part of the P-type doped well layer in a horizontal direction. The heavily-doped P-type source region is located at a periphery of the second trench, a middle part and the upper part of the P-type doped well layer are provided with an N-type doped well layer and a P-type doped base region layer, respectively. The heavily-doped P-type source region and the heavily-doped N-type source region are both located at an upper part of the P-type doped base region layer.