Abstract: An IPS LCD includes a first substrate (21), a second substrate (22), and a liquid crystal layer (23) interposed between the first and second substrates. The first substrate includes a first transparent sheet (211). The second substrate includes in turn a second transparent sheet (221), an insulating layer (224) and an alignment film (225). A plurality of electrodes (222) and a thin film transistor (223) is formed between the second transparent sheet and the insulating layer. The alignment film has an alignment structure (226) thereon. The IPS LCD has a high transmission ratio and low power consumption.

Abstract: An IPS LCD includes a first substrate (21), a second substrate (22), and a liquid crystal layer (23) interposed between the first and second substrates. The first substrate includes in turn a first transparent sheet (211) and an alignment film (213). The second substrate includes in turn a second transparent sheet (221) and an insulating layer (224). A plurality of electrodes (222) and a thin film transistor (223) is formed between the second transparent sheet and the insulating layer. The alignment film has an alignment structure (214) thereon. The IPS LCD is low cost and low power consumption.

Abstract: A thin film transistor includes a substrate (1), a gate electrode (2) disposed in the substrate, a gate insulation layer (4) disposed on the substrate and gate electrode, a channel layer (5) disposed on the gate insulation layer, a source ohmic contact layer (6a) and a drain ohmic contact layer (6b) arranged on the channel layer and at the end of the channel layer, a source electrode (7a) disposed on the substrate and source ohmic contact layer, a drain electrode (7b) disposed on the substrate and drain ohmic contact layer.

Abstract: A color filter (30) in accordance with the present invention includes a transparent substrate (34), a black matrix (33) and a color resin layer (32). The black matrix has an antireflection layer (332) and a light-shielding layer (331) successively formed on the transparent substrate. The antireflection layer includes a first antireflection film (3321) having a first index of refraction, and a second antireflection film (3322) having a different second index of refraction. The black matrix defines a plurality apertures arranged in an array, the apertures being filled with the color resin layer, the color resin layer covering the black matrix entirely.

Abstract: A cassette (50) for holding or transporting substrates therein includes a pair of frames (51, 52) opposite each other, a pair of side plates (53, 54) facing each other and supporting the frames, and at least two division plates (55, 56) between the frames. The side plates include inner surfaces and supporting members (531) protruding from the inner surfaces, and the division plates also have supporting members protruding therefrom. The frames, the side plates and the division plates define at least three spaces for holding differently sized substrates on the supporting members.

Abstract: A color filter and a method for manufacturing the same are provided. The color filter includes a polarizer matrix (202), which is patterned in accordance with the pixel arrangement of a liquid crystal display device. The polarizer matrix (202) is made of a thin crystal film material, which may linearly polarize incident light along one direction. By incorporating with a polarizer film (206), the polarizer matrix (202) becomes an effective black matrix. A thinner black matrix may thus be produced, and the manufacturing processes of the color filter are simplified.

Abstract: A method for coating photoresist (300) on a substrate (100) includes the steps of forming grooves (120) on the substrate, applying photoresist onto the substrate, and finally vibrating the substrate. The photoresist can be coated on the substrate evenly, and the efficiency of utilization of the photoresist is high.

Abstract: A method for fabricating thin film transistor (TFT). A substrate is provided, on which a gate, a gate insulating layer and a channel have been formed thereon. A conductive layer is formed on the channel, and a photoresist layer is formed on the conductive layer. The photoresist layer has an opening aligned over the gate. A wet etching step is performed using the photoresist layer as a mask, such that the conductive layer is partially removed with a thickness. A dry etching step is further performed to remove the residual thickness of the conductive layer and a thickness of the channel using the same photoresist layer as a mask to form a source/drain region.

Abstract: A structure of a storage capacitor on common (Cst on common) that is connected to a capacitor switch element. The Cst on common has a first capacitor electrode, a capacitor dielectric layer, a second capacitor electrode and a redundant pattern. The first capacitor electrode, that is, a common electrode line is connected to the capacitor switch element. The capacitor dielectric layer is located on the common electrode line. The second capacitor electrode is formed on the capacitor dielectric layer. Therefore, a capacitor is built with the first and the second capacitor electrode and the capacitor dielectric layer. The redundant pattern has two ends, both connected on the common electrode line. When the defective capacitor is cut and separated, the redundant pattern maintain the continuity of the common electrode line.

Abstract: A thin film transistor made with photoconductive material. The thin film transistor comprises a transparent substrate, a gate electrode on the transparent substrate, a dielectric layer on the gate electrode and the transparent substrate, a photoconductive layer on the dielectric layer, a source electrode on the dielectric layer and the photoconductive layer and located at one side of the gate electrode, a drain electrode on the dielectric layer and the photoconductive layer and located beside another side of the gate electrode, and a passivation layer on the source electrode, drain electrode, photoconductive layer and the dielectric layer. The invention is characterized in that the drain and gate electrodes do not overlap and the photoconductive layer located under the drain electrode and above the gate electrode forms a photoconductive region.

Abstract: A thin film transistor made with photoconductive material. The thin film transistor comprises a transparent substrate, a gate electrode on the transparent substrate, a dielectric layer on the gate electrode and the transparent substrate, a photoconductive layer on the dielectric layer, a source electrode on the dielectric layer and the photoconductive layer and located at one side of the gate electrode, a drain electrode on the dielectric layer and the photoconductive layer and located beside another side of the gate electrode, and a passivation layer on the source electrode, drain electrode, photoconductive layer and the dielectric layer. The invention is characterized in that the drain and gate electrodes do not overlap and the photoconductive layer located under the drain electrode and above the gate electrode forms a photoconductive region.

Abstract: A structure of a storage capacitor on common (Cst on common) that is connected to a capacitor switch element. The Cst on common has a first capacitor electrode, a capacitor dielectric layer, a second capacitor electrode and a redundant pattern. The first capacitor electrode, that is, a common electrode line is connected to the capacitor switch element. The capacitor dielectric layer is located on the common electrode line. The second capacitor electrode is formed on the capacitor dielectric layer. Therefore, a capacitor is built with the first and the second capacitor electrode and the capacitor dielectric layer. The redundant pattern has two ends, both connected on the common electrode line. When the defective capacitor is cut and separated, the redundant pattern maintain the continuity of the common electrode line.

Abstract: One or more supplemental, pulsed energy sources can be used in combination with a pulsed, primary energy source which provides energy to a plurality of spaced apart loads. The loads are coupled to the pulsed, primary source by a pair of conductors. Each supplemental energy source includes circuitry for repetitively storing a predetermined quantity of supplemental energy and circuitry for detecting a start of a primary energy pulse and in response thereto, for discharging the restored supplemental energy into the conductors. Between primary energy pulses, the supplemental energy quantity is automatically restored.

Abstract: Polymer blend compositions having improved toughness which comprise 99-1 weight percent polyamide resin, 1-99 weight percent ABS resin, and 1-100 phr of carboxylated nitrile rubbers, based upon the total weight of the polyamide and ABS resin.