Patents by Inventor Jia-Qing HUNG

Jia-Qing HUNG has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Structure and a manufacturing method of a MOSFET with an element of IVA group ion implantation
    Patent number: 11121235
    Abstract: A structure and a manufacturing method of a metal-oxide-semiconductor field-effect transistor with an element of IVA group ion implantation are disclosed. The element of IVA group ion implantation layer is disposed in a body and close to an interface between a gate oxide layer and the body. The element of IVA group ion implantation layer is utilized to change a property of a channel of the structure.
    Type: Grant
    Filed: July 24, 2019
    Date of Patent: September 14, 2021
    Assignee: National Tsing Hua University
    Inventors: Chih-Fang Huang, Jheng-Yi Jiang, Sheng-Hong Wang, Jia-Qing Hung
  • STRUCTURE AND A MANUFACTURING METHOD OF A MOSFET WITH AN ELEMENT OF IVA GROUP ION IMPLANTATION
    Publication number: 20200035810
    Abstract: A structure and a manufacturing method of a metal-oxide-semiconductor field-effect transistor with an element of IVA group ion implantation are disclosed. The element of IVA group ion implantation layer is disposed in a body and close to an interface between a gate oxide layer and the body. The element of IVA group ion implantation layer is utilized to change a property of a channel of the structure.
    Type: Application
    Filed: July 24, 2019
    Publication date: January 30, 2020
    Inventors: Chih-Fang HUANG, Jheng-Yi JIANG, Sheng-Hong WANG, Jia-Qing HUNG