Patents by Inventor Jia-Ren Chen
Jia-Ren Chen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240114272Abstract: A speaker device is installed in an electronic device, and the speaker device includes a speaker module and a first loop tube. The speaker module has a casing and a speaker unit. The casing has a main sound cavity and a sound outlet. The speaker unit is disposed in the casing, and the speaker unit includes a diaphragm, which is communicated with the sound outlet. The first loop tube has a first end and a second end, and the first end is connected to the casing. The length of the first loop tube is at least 10 mm, and the inner diameter of the first loop tube is at least 2 mm.Type: ApplicationFiled: April 18, 2023Publication date: April 4, 2024Inventors: Jia-Ren CHANG, Ruey-Ching SHYU, Chien-Chung CHEN
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Patent number: 9177843Abstract: A semiconductor manufacturing line includes an inert environment selected from the group consisting essentially of an inert airtight wafer holder, an inert wafer transport channel, an inert production tool, an inert clean room, and combinations thereof.Type: GrantFiled: June 29, 2007Date of Patent: November 3, 2015Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Chien-Ming Sung, Simon Wang, Jia-Ren Chen, Henry Lo, Chen-Hua Yu, Jean Wang, Kewei Zuo
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Patent number: 8748952Abstract: A system and method for image sensing is disclosed. An embodiment comprises a substrate with a pixel region, the substrate having a front side and a backside. A co-implant process is performed along the backside of the substrate opposing a photosensitive element positioned along the front side of the substrate. The co-implant process utilizes a first pre-amorphization implant process that creates a pre-amorphization region. A dopant is then implanted wherein the pre-amorphization region retards or reduces the diffusion or tailing of the dopants into the photosensitive region. An anti-reflective layer, a color filter, and a microlens may also be formed over the co-implant region.Type: GrantFiled: May 10, 2013Date of Patent: June 10, 2014Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Cheng-Tsung Chen, Hsun-Ying Huang, Yung-Cheng Chang, Yung-Fu Yeh, Yu-Ping Chen, Chi-Yuan Liang, Shou Shu Lu, Juan-Lin Chen, Jia-Ren Chen, Horng-Daw Shen, Chi-Hsun Hsieh
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Publication number: 20130249037Abstract: A system and method for image sensing is disclosed. An embodiment comprises a substrate with a pixel region, the substrate having a front side and a backside. A co-implant process is performed along the backside of the substrate opposing a photosensitive element positioned along the front side of the substrate. The co-implant process utilizes a first pre-amorphization implant process that creates a pre-amorphization region. A dopant is then implanted wherein the pre-amorphization region retards or reduces the diffusion or tailing of the dopants into the photosensitive region. An anti-reflective layer, a color filter, and a microlens may also be formed over the co-implant region.Type: ApplicationFiled: May 10, 2013Publication date: September 26, 2013Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Cheng-Tsung Chen, Hsun-Ying Huang, Yung-Cheng Chang, Yung-Fu Yeh, Yu-Ping Chen, Chi-Yuan Liang, Shou Shu Lu, Juan-Lin Chen, Jia-Ren Chen, Horng-Daw Shen, Chi-Hsun Hsieh
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Patent number: 8466530Abstract: A system and method for image sensing is disclosed. An embodiment comprises a substrate with a pixel region, the substrate having a front side and a backside. A co-implant process is performed along the backside of the substrate opposing a photosensitive element positioned along the front side of the substrate. The co-implant process utilizes a first pre-amorphization implant process that creates a pre-amorphization region. A dopant is then implanted wherein the pre-amorphization region retards or reduces the diffusion or tailing of the dopants into the photosensitive region. An anti-reflective layer, a color filter, and a microlens may also be formed over the co-implant region.Type: GrantFiled: June 30, 2011Date of Patent: June 18, 2013Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Cheng-Tsung Chen, Hsun-Ying Huang, Yung-Cheng Chang, Yung-Fu Yeh, Yu-Ping Chen, Chi-Yuan Liang, Shou Shu Lu, Juan-Lin Chen, Jia-Ren Chen, Horng-Daw Shen, Chi-Hsun Hsieh
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Publication number: 20130001722Abstract: A system and method for image sensing is disclosed. An embodiment comprises a substrate with a pixel region, the substrate having a front side and a backside. A co-implant process is performed along the backside of the substrate opposing a photosensitive element positioned along the front side of the substrate. The co-implant process utilizes a first pre-amorphization implant process that creates a pre-amorphization region. A dopant is then implanted wherein the pre-amorphization region retards or reduces the diffusion or tailing of the dopants into the photosensitive region. An anti-reflective layer, a color filter, and a microlens may also be formed over the co-implant region.Type: ApplicationFiled: June 30, 2011Publication date: January 3, 2013Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Cheng-Tsung Chen, Hsun-Ying Huang, Yung-Cheng Chang, Yung-Fu Yeh, Yu-Ping Chen, Chi-Yuan Liang, Shou Shu Lu, Juan-Lin Chen, Jia-Ren Chen, Horng-Daw Shen, Chi-Hsun Hsieh
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Publication number: 20080304944Abstract: A semiconductor manufacturing line includes an inert environment selected from the group consisting essentially of an inert airtight wafer holder, an inert wafer transport channel, an inert production tool, an inert clean room, and combinations thereof.Type: ApplicationFiled: June 29, 2007Publication date: December 11, 2008Inventors: Chien-Ming Sung, Simon Wang, Jia-Ren Chen, Henry Lo, Chen-Hua Yu, Jean Wang, Kewei Zuo
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Patent number: 7214551Abstract: A method for fabricating a semiconductor product first provides an embedded semiconductor product comprising: (1) a logic region having formed therein a logic field effect transistor device; (2) a memory region having formed therein a memory field effect transistor device; and (3) a kerf region having formed therein a kerf field effect transistor device. The method also provides for measuring for the embedded semiconductor product a gate electrode linewidth for each of the logic field effect transistor device, the memory field effect transistor device and the kerf field effect transistor device. The measured gate electrode linewidths may be compared among themselves or to specified target values for purposes photoexposure process control.Type: GrantFiled: October 14, 2003Date of Patent: May 8, 2007Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Jia-Ren Chen, Hung Che Hsiue, Hann Huei Tsai, Wei Hsiung Hsu
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Patent number: 6928748Abstract: A method and apparatus for performing a semiconductor process wafer drying process, the method provides a semiconductor wafer having a process surface disposed in an enclosed drying space following exposure of the process surface to water; supplying a solvent vapor to the drying space at a predetermined concentration from a solvent vapor source and at least one solvent vapor supply line; determining at least one of a solvent vapor concentration and a solvent vapor temperature in the drying space; and heating in response to the determined solvent concentration at least one of at least a portion of one of the solvent vapor source, the at least one solvent vapor supply line, and at the drying space to alter the solvent vapor concentration in the drying space.Type: GrantFiled: October 16, 2003Date of Patent: August 16, 2005Assignee: Taiwan Semiconductor Manufacturing Co., LtdInventors: Jia-Ren Chen, Li-De Hsu, Chin-Chia Kuo, Hann-Huei Tsai
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Publication number: 20050091874Abstract: A method and apparatus for performing a semiconductor process wafer drying process, the method provides a semiconductor wafer having a process surface disposed in an enclosed drying space following exposure of the process surface to water; supplying a solvent vapor to the drying space at a predetermined concentration from a solvent vapor source and at least one solvent vapor supply line; determining at least one of a solvent vapor concentration and a solvent vapor temperature in the drying space; and heating in response to the determined solvent concentration at least one of at least a portion of one of the solvent vapor source, the at least one solvent vapor supply line, and at the drying space to alter the solvent vapor concentration in the drying space.Type: ApplicationFiled: October 16, 2003Publication date: May 5, 2005Inventors: Jia-Ren Chen, L.D. Shiu, C.C. Kuoc, H.H. Tsai
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Publication number: 20050081168Abstract: A method for fabricating a semiconductor product first provides an embedded semiconductor product comprising: (1) a logic region having formed therein a logic field effect transistor device; (2) a memory region having formed therein a memory field effect transistor device; and (3) a kerf region having formed therein a kerf field effect transistor device. The method also provides for measuring for the embedded semiconductor product a gate electrode linewidth for each of the logic field effect transistor device, the memory field effect transistor device and the kerf field effect transistor device. The measured gate electrode linewidths may be compared among themselves or to specified target values for purposes photoexposure process control.Type: ApplicationFiled: October 14, 2003Publication date: April 14, 2005Inventors: Jia-Ren Chen, H.C. Hsiue, H.H. Tsai, W.H. Hsu
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Patent number: 6319762Abstract: A method for fabricating poly-spacers used in a semiconductor substrate, comprising: forming an undoped first polysilicon layer on the semiconductor substrate; performing a first ion implantation with a first angle to implant impurities into the first polysilicon layer; performing a second ion implantation with a second angle to implant the impurities into the first polysilicon layer; forming a second polysilicon layer on the first polysilicon layer; and etching the first polysilicon layer and the second polysilicon layer to form spacers.Type: GrantFiled: June 19, 2000Date of Patent: November 20, 2001Assignee: TSMC-ACER Semiconductor Manufacturing Corp.Inventors: Shiou-han Liaw, Yau-feng Lo, Po-lung Chuang, Jia-ren Chen, Yen-hung Lai, Calvin Wu