Patents by Inventor Jia-Rui Lee
Jia-Rui Lee has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11894459Abstract: The present disclosure describes a semiconductor structure that includes a channel region, a source region adjacent to the channel region, a drain region, a drift region adjacent to the drain region, and a dual gate structure. The dual gate structure includes a first gate structure over portions of the channel region and portions of the drift region. The dual gate structure also includes a second gate structure over the drift region.Type: GrantFiled: January 5, 2021Date of Patent: February 6, 2024Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Po-Chih Su, Ruey-Hsin Liu, Pei-Lun Wang, Jia-Rui Lee, Jyun-Guan Jhou
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Publication number: 20230335640Abstract: A semiconductor structure is disclosed. The semiconductor structure includes: a substrate; an isolation region adjacent to the drain region; a gate electrode over the substrate and further downwardly extends into the substrate, wherein a portion of the gate electrode below a top surface of the substrate abuts the isolation region; and a source region and a drain region formed in the substrate on either side of the gate structure. An associated method for fabricating the semiconductor structure is also disclosed.Type: ApplicationFiled: June 21, 2023Publication date: October 19, 2023Inventors: JIA-RUI LEE, KUO-MING WU, YI-CHUN LIN
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Patent number: 11721758Abstract: A semiconductor structure is disclosed. The semiconductor structure includes: a substrate; an isolation region adjacent to the drain region; a gate electrode over the substrate and further downwardly extends into the substrate, wherein a portion of the gate electrode below a top surface of the substrate abuts the isolation region; and a source region and a drain region formed in the substrate on either side of the gate structure. An associated method for fabricating the semiconductor structure is also disclosed.Type: GrantFiled: November 24, 2020Date of Patent: August 8, 2023Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.Inventors: Jia-Rui Lee, Kuo-Ming Wu, Yi-Chun Lin
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Publication number: 20220384647Abstract: The present disclosure describes a semiconductor structure that includes a channel region, a source region adjacent to the channel region, a drain region, a drift region adjacent to the drain region, and a dual gate structure. The dual gate structure includes a first gate structure over portions of the channel region and portions of the drift region. The dual gate structure also includes a second gate structure over the drift region.Type: ApplicationFiled: July 29, 2022Publication date: December 1, 2022Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Po-Chih SU, Ruey-Hsin LIU, Pei-Lun WANG, Jia-Rui LEE, Jyun-Guan JHOU
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Publication number: 20220029020Abstract: The present disclosure describes a semiconductor structure that includes a channel region, a source region adjacent to the channel region, a drain region, a drift region adjacent to the drain region, and a dual gate structure. The dual gate structure includes a first gate structure over portions of the channel region and portions of the drift region. The dual gate structure also includes a second gate structure over the drift region.Type: ApplicationFiled: January 5, 2021Publication date: January 27, 2022Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Po-Chih SU, Ruey-Hsin LIU, Pei-Lun WANG, Jia-Rui LEE, Jyun-Guan JHOU
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Patent number: 11189613Abstract: A semiconductor device and a method of forming the same are provided. The semiconductor device includes a transistor and a diode. The transistor includes a first gate region electrically coupled to a gate driver, and a first source region and a first drain region on two sides of the first gate region. The diode includes two terminals coupled between the first drain region of the transistor and a reference voltage. The transistor has a threshold voltage greater than that of the diode.Type: GrantFiled: December 10, 2019Date of Patent: November 30, 2021Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.Inventors: Jia-Rui Lee, Kuo-Ming Wu, Yi-Chun Lin, Alexander Kalnitsky
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Publication number: 20210074854Abstract: A semiconductor structure is disclosed. The semiconductor structure includes: a substrate; an isolation region adjacent to the drain region; a gate electrode over the substrate and further downwardly extends into the substrate, wherein a portion of the gate electrode below a top surface of the substrate abuts the isolation region; and a source region and a drain region formed in the substrate on either side of the gate structure. An associated method for fabricating the semiconductor structure is also disclosed.Type: ApplicationFiled: November 24, 2020Publication date: March 11, 2021Inventors: JIA-RUI LEE, KUO-MING WU, YI-CHUN LIN
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Patent number: 10847650Abstract: A semiconductor structure is disclosed. The semiconductor structure includes: a substrate; an isolation region adjacent to the drain region; a gate electrode over the substrate and further downwardly extends into the substrate, wherein a portion of the gate electrode below a top surface of the substrate abuts the isolation region; and a source region and a drain region formed in the substrate on either side of the gate structure. An associated method for fabricating the semiconductor structure is also disclosed.Type: GrantFiled: October 23, 2019Date of Patent: November 24, 2020Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.Inventors: Jia-Rui Lee, Kuo-Ming Wu, Yi-Chun Lin
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Publication number: 20200118997Abstract: A semiconductor device and a method of forming the same are provided. The semiconductor device includes a transistor and a diode. The transistor includes a first gate region electrically coupled to a gate driver, and a first source region and a first drain region on two sides of the first gate region. The diode includes two terminals coupled between the first drain region of the transistor and a reference voltage. The transistor has a threshold voltage greater than that of the diode.Type: ApplicationFiled: December 10, 2019Publication date: April 16, 2020Inventors: JIA-RUI LEE, KUO-MING WU, YI-CHUN LIN, ALEXANDER KALNITSKY
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Publication number: 20200058789Abstract: A semiconductor structure is disclosed. The semiconductor structure includes: a substrate; an isolation region adjacent to the drain region; a gate electrode over the substrate and further downwardly extends into the substrate, wherein a portion of the gate electrode below a top surface of the substrate abuts the isolation region; and a source region and a drain region formed in the substrate on either side of the gate structure. An associated method for fabricating the semiconductor structure is also disclosed.Type: ApplicationFiled: October 23, 2019Publication date: February 20, 2020Inventors: JIA-RUI LEE, KUO-MING WU, YI-CHUN LIN
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Patent number: 10505038Abstract: A semiconductor structure is disclosed. The semiconductor structure includes: a substrate; an isolation region adjacent to the drain region; a gate electrode over the substrate and further downwardly extends into the substrate, wherein a portion of the gate electrode below a top surface of the substrate abuts the isolation region; and a source region and a drain region formed in the substrate on either side of the gate structure. An associated method for fabricating the semiconductor structure is also disclosed.Type: GrantFiled: September 28, 2017Date of Patent: December 10, 2019Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.Inventors: Jia-Rui Lee, Kuo-Ming Wu, Yi-Chun Lin
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Patent number: 10504892Abstract: A semiconductor device of a circuit is provided. The circuit is configured to be operated under a power supply. The semiconductor device of the circuit includes a first transistor and a second transistor. The first transistor includes a first source region in a first bulk region; a first drain region defined by a well and a doped region, wherein the first source region and the doped region are separate by a distance, which is a factor which determines a breakdown voltage of the first transistor, the breakdown voltage being associated with the power supply; and a first gate. The second transistor includes a second source region in a second bulk region, the second source region electrically connected with the first source region and the first gate.Type: GrantFiled: June 26, 2018Date of Patent: December 10, 2019Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.Inventors: Jia-Rui Lee, Kuo-Ming Wu, Yi-Chun Lin, Alexander Kalnitsky
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Publication number: 20190097044Abstract: A semiconductor structure is disclosed. The semiconductor structure includes: a substrate; an isolation region adjacent to the drain region; a gate electrode over the substrate and further downwardly extends into the substrate, wherein a portion of the gate electrode below a top surface of the substrate abuts the isolation region; and a source region and a drain region formed in the substrate on either side of the gate structure. An associated method for fabricating the semiconductor structure is also disclosed.Type: ApplicationFiled: September 28, 2017Publication date: March 28, 2019Inventors: JIA-RUI LEE, KUO-MING WU, YI-CHUN LIN
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Publication number: 20180308840Abstract: A semiconductor device of a circuit is provided. The circuit is configured to be operated under a power supply. The semiconductor device of the circuit includes a first transistor and a second transistor. The first transistor includes a first source region in a first bulk region; a first drain region defined by a well and a doped region, wherein the first source region and the doped region are separate by a distance, which is a factor which determines a breakdown voltage of the first transistor, the breakdown voltage being associated with the power supply; and a first gate. The second transistor includes a second source region in a second bulk region, the second source region electrically connected with the first source region and the first gate.Type: ApplicationFiled: June 26, 2018Publication date: October 25, 2018Inventors: JIA-RUI LEE, KUO-MING WU, YI-CHUN LIN, ALEXANDER KALNITSKY
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Patent number: 10014293Abstract: A semiconductor device of a circuit is provided. The circuit is configured to be operated under a power supply. The semiconductor device of the circuit includes a first transistor and a second transistor. The first transistor includes a first source region in a first bulk region; a first drain region defined by a well and a doped region, wherein the first source region and the doped region are separate by a distance, which is a factor which determines a breakdown voltage of the first transistor, the breakdown voltage being associated with the power supply; and a first gate. The second transistor includes a second source region in a second bulk region, the second source region electrically connected with the first source region and the first gate.Type: GrantFiled: January 6, 2017Date of Patent: July 3, 2018Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.Inventors: Jia-Rui Lee, Kuo-Ming Wu, Yi-Chun Lin, Alexander Kalnitsky
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Publication number: 20170125409Abstract: A semiconductor device of a circuit is provided. The circuit is configured to be operated under a power supply. The semiconductor device of the circuit includes a first transistor and a second transistor. The first transistor includes a first source region in a first bulk region; a first drain region defined by a well and a doped region, wherein the first source region and the doped region are separate by a distance, which is a factor which determines a breakdown voltage of the first transistor, the breakdown voltage being associated with the power supply; and a first gate. The second transistor includes a second source region in a second bulk region, the second source region electrically connected with the first source region and the first gate.Type: ApplicationFiled: January 6, 2017Publication date: May 4, 2017Inventors: JIA-RUI LEE, KUO-MING WU, YI-CHUN LIN, ALEXANDER KALNITSKY
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Patent number: 9553087Abstract: In some embodiments, a semiconductor device includes a first transistor and a second transistor. The first transistor includes a first source region in a first bulk region having a first concentration, and a first gate. The second transistor includes a second source region in a second bulk region having a second concentration higher than the first concentration. The second source region is connected with the first source region and the first gate.Type: GrantFiled: November 2, 2015Date of Patent: January 24, 2017Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.Inventors: Jia-Rui Lee, Kuo-Ming Wu, Yi-Chun Lin, Alexander Kalnitsky