Abstract: A method for processing an integrated circuit includes forming first and second gate all around transistors. The method forms a dipole oxide in the first gate all around transistor without forming the dipole oxide in the second gate all around transistor. This is accomplished by entirely removing an interfacial dielectric layer and a dipole-inducing layer from semiconductor nanosheets of the second gate all around transistor before redepositing the interfacial dielectric layer on the semiconductor nanosheets of the second gate all around transistor.

Abstract: A semiconductor device structure is provided. The device includes one or more first semiconductor layers, each first semiconductor layer of the one or more first semiconductor layers is surrounded by a first intermixed layer, wherein the first intermixed layer comprises a first material and a second material.

Abstract: A semiconductor device structure, along with methods of forming such, are described. The semiconductor device structure includes a first dielectric feature extending along a first direction, the first dielectric feature comprising a first dielectric layer having a first sidewall and a second sidewall opposing the first sidewall, a first semiconductor layer disposed adjacent the first sidewall, the first semiconductor layer extending along a second direction perpendicular to the first direction, a second dielectric feature extending along the first direction, the second dielectric feature disposed adjacent the first semiconductor layer, and a first gate electrode layer surrounding at least three surfaces of the first semiconductor layer, and a portion of the first gate electrode layer is exposed to a first air gap.

Abstract: Semiconductor structures and methods for forming the same are provided. The semiconductor structure includes a plurality of first nanostructures formed over a substrate, and a dielectric wall adjacent to the first nanostructures. The semiconductor structure also includes a first liner layer between the first nanostructures and the dielectric wall, and the first liner layer is in direct contact with the dielectric wall. The semiconductor structure also includes a gate structure surrounding the first nanostructures, and the first liner layer is in direct contact with a portion of the gate structure.

Abstract: A semiconductor device according to the present disclosure includes a source feature and a drain feature, a plurality of semiconductor nanostructures extending between the source feature and the drain feature, a gate structure wrapping around each of the plurality of semiconductor nanostructures, a bottom dielectric layer over the gate structure and the drain feature, a backside power rail disposed over the bottom dielectric layer, and a backside source contact disposed between the source feature and the backside power rail. The backside source contact extends through the bottom dielectric layer.

Abstract: In some embodiments, the present disclosure relates to an integrated chip. The integrated chip includes a first channel structure configured to transport charge carriers within a first transistor device and a first gate electrode layer wrapping around the first channel structure. A second channel structure is configured to transport charge carriers within a second transistor device. A second gate electrode layer wraps around the second channel structure. The second gate electrode layer continuously extends from around the second channel structure to cover the first gate electrode layer. A third channel structure is configured to transport charge carriers within a third transistor device. A third gate electrode layer wraps around the third channel structure. The third gate electrode layer continuously extends from around the third channel structure to cover the second gate electrode layer.

Abstract: A bicycle bottom bracket set has two bearing cups, the bearing cup has a built-in ring, a tightening socket and a bearing. The built-in ring and the tightening socket are provided with a guiding end and a connecting portion. When the bearing cup screw is installed, the guiding end of the built-in ring can be gradually opened and pressed against the inner wall of the bottom bracket. When the bottom bracket has inner diameter offsets caused by the heat expansion and contraction factor or the poor processing, the combination of the forced tension of the bearing cup can achieve the purpose of structurally limiting. The stability of the structural installation while ensuring the safety of the structure.

Abstract: A bicycle bottom bracket set has two bearing cups, the bearing cup has a built-in ring, a tightening socket and a bearing. The built-in ring and the tightening socket are provided with a guiding end and a connecting portion. When the bearing cup screw is installed, the guiding end of the built-in ring can be gradually opened and pressed against the inner wall of the bottom bracket. When the bottom bracket has inner diameter offsets caused by the heat expansion and contraction factor or the poor processing, the combination of the forced tension of the bearing cup can achieve the purpose of structurally limiting. The stability of the structural installation while ensuring the safety of the structure.

Abstract: A production tool includes a chamber, a heater in the chamber, and a pumping outlet on a side of the heater. A pumping liner is in the chamber and encircling the heater. The pumping liner and the heater have a first gap therebetween and a second gap therebetween. The second gap is different from the first gap, and the second gap is farther away from the first pumping outlet than the first gap.

Abstract: A production tool includes a chamber, a heater in the chamber, and a pumping outlet on a side of the heater. A pumping liner is in the chamber and encircling the heater. The pumping liner and the heater have a first gap therebetween and a second gap therebetween. The second gap is different from the first gap, and the second gap is farther away from the first pumping outlet than the first gap.