Abstract: In some embodiments, electromechanical systems including a semiconductor layer that has a planar surface and includes conductive and adjacent non-conductive regions and a hermetic seal applied above the planar surface and methods of manufacturing the systems are disclosed. In some embodiments, electromechanical devices that include first and second planar semiconductor layers are disclosed. Each of the semiconductor layers includes conductive regions, and at least one conductive region from each of the layers is electrically coupled to each other. Methods of manufacturing the electromechanical devices are also disclosed.

Abstract: This disclosure provides systems, methods and apparatus for OLED control circuits. In some implementations, the OLED control circuit can be configured to reverse the bias of the OLED without the use of a dedicated initialization voltage. A low voltage data signal applied on a data line can be used to drain voltage from the anode of the OLED through a diode-connected transistor. A high voltage data signal applied on the same data line can be used to store a reference voltage on a storage capacitor, where the reference voltage is also a function of the threshold voltage of a driving transistor of the OLED control circuit. The stored reference voltage can be used to compensate for the threshold voltage of the driving transistor when the OLED is energized by a current, so that the current is independent of the threshold voltage of the driving transistor.

Abstract: This disclosure provides systems, methods and apparatus for OLED control circuits. In some implementations, the OLED control circuit can be configured to reverse the bias of the OLED without the use of a dedicated initialization voltage. A low voltage data signal applied on a data line can be used to drain voltage from the anode of the OLED through a diode-connected transistor. A high voltage data signal applied on the same data line can be used to store a reference voltage on a storage capacitor, where the reference voltage is also a function of the threshold voltage of a driving transistor of the OLED control circuit. The stored reference voltage can be used to compensate for the threshold voltage of the driving transistor when the OLED is energized by a current, so that the current is independent of the threshold voltage of the driving transistor.

Abstract: This disclosure provides apparatuses and methods of manufacturing apparatuses including thin film transistors (TFTs) and storage capacitors. An apparatus can include a substrate, a TFT, a storage capacitor adjacent to the TFT, and a common electrode. The storage capacitor can be substantially transparent to increase aperture ratio of a display device. The storage capacitor can include an insulating layer between a first transparent electrode and a second transparent electrode. The TFT can include a gate electrode, a gate insulating layer, an oxide semiconductor, source and drain electrodes, and a dielectric layer. The oxide semiconductor can be formed out of the same layer as the first transparent electrode, and the common electrode can be formed out of the same layer as the oxide semiconductor or the source and drain electrodes.

Abstract: A photovoltaic device is disclosed, which includes a transparent substrate, a set of photovoltaic cells and at least one bypass diode device. The photovoltaic cells are connected to each other in series and include a plurality of front electrode segments formed on the transparent substrate, a plurality of photoelectric conversion segments of semiconductor material formed on the front electrode segments, and a plurality of first back electrode segments of metal formed on the photoelectric conversion segments respectively. The bypass diode device is formed on the transparent substrate and substantially equal in layer construction to each of the photovoltaic cells, where the bypass diode and the photovoltaic cells share two or more of the front electrode segments.

Abstract: A thin film photovoltaic module having a plurality of interconnected submodules and a manufacturing method thereof have been disclosed in the present invention. Each submodule has a front electrode layer, a semiconductor layer, and a back electrode layer which have separating lines in each case for forming series-connected photovoltaic cells. The outer cells of two adjacent submodules are united into a single common tap cell for current collection. The separating lines of the two adjacent submodules are disposed mirror-asymmetrically with respect to a perpendicular bisector of the common tap cell. According to the present invention, the thin film photovoltaic module can prevent leakage current and power drop.

Abstract: A thin film photoelectric conversion module includes a substrate, a first electrode layer, at least one photoelectric conversion layer and a second electrode layer. The first electrode layer is deposited on the substrate, wherein the first electrode layer includes a plurality of first electrode rows extending along a current flow direction. Any immediately-adjacent two of the first electrode rows have a row of unoverlapped through holes formed therebetween. The photoelectric conversion layer is deposited on the first electrode layer. The second electrode layer is deposited on the photoelectric conversion layer.

Abstract: A thin film photoelectric conversion module is provided. The thin film photoelectric conversion module includes a substrate and a plurality of photoelectric conversion cells formed on the substrate and connected to each other in series to form a series-connected array. The thin film photoelectric conversion module further comprises a plurality of first electrode rows extending along a current flow direction and a resistive material electrically connected to adjacent two of the first electrode rows, wherein the resistive material has an electrical resistivity no less than 10?9 ohm-cm, wherein when the resistive material is a material different from that of the first electrode rows, the resistive material makes adjacent two of the first electrode rows at least partially connected, and when the resistive material is a material the same as that of the first electrode rows, the resistive material makes adjacent two of the first electrode rows partially connected.

Abstract: A thin film solar cell includes a substrate, a transparent electrode layer, a semiconductor layer, a back electrode layer, a positive electrode and a negative electrode. The semiconductor layer is formed on the transparent electrode layer and has grooves. The back electrode layer is formed on the semiconductor layer, in which formation of the semiconductor layer with the back electrode layer is patterned and the patterned formation with the transparent electrode layer form unit cells connected in series. The positive electrode is formed upon a front unit cell of the unit cells. The negative electrode is formed upon a last unit cell of the unit cells. The back electrode layer is formed to fill at least the grooves of the front unit cell and the last unit cell to directly connect with the transparent electrode layer. A method for fabricating a thin film solar cell is also provided.