Patents by Inventor Jia-Xsing Li

Jia-Xsing Li has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20230375783
    Abstract: A semiconductor device includes a photonic die and an optical die. The photonic die includes a grating coupler and an optical device. The optical device is connected to the grating coupler to receive radiation of predetermined wavelength incident on the grating coupler. The optical die is disposed over the photonic die and includes a substrate with optical nanostructures. Positions and shapes of the optical nanostructures are such to perform an optical transformation on the incident radiation of predetermined wavelength when the incident radiation passes through an area of the substrate where the optical nanostructures are located. The optical nanostructures overlie the grating coupler so that the incident radiation of predetermined wavelength crosses the optical die where the optical nanostructures are located before reaching the grating coupler.
    Type: Application
    Filed: July 27, 2023
    Publication date: November 23, 2023
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Yu-Kuang Liao, Jia-Xsing Li, Ping-Jung Wu, Tsang-Jiuh Wu, Wen-Chih Chiou, Chen-Hua Yu
  • Patent number: 11774675
    Abstract: A semiconductor device includes a photonic die and an optical die. The photonic die includes a grating coupler and an optical device. The optical device is connected to the grating coupler to receive radiation of predetermined wavelength incident on the grating coupler. The optical die is disposed over the photonic die and includes a substrate with optical nanostructures. Positions and shapes of the optical nanostructures are such to perform an optical transformation on the incident radiation of predetermined wavelength when the incident radiation passes through an area of the substrate where the optical nanostructures are located. The optical nanostructures overlie the grating coupler so that the incident radiation of predetermined wavelength crosses the optical die where the optical nanostructures are located before reaching the grating coupler.
    Type: Grant
    Filed: October 13, 2022
    Date of Patent: October 3, 2023
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Yu-Kuang Liao, Jia-Xsing Li, Ping-Jung Wu, Tsang-Jiuh Wu, Wen-Chih Chiou, Chen-Hua Yu
  • Publication number: 20230035735
    Abstract: A semiconductor device includes a photonic die and an optical die. The photonic die includes a grating coupler and an optical device. The optical device is connected to the grating coupler to receive radiation of predetermined wavelength incident on the grating coupler. The optical die is disposed over the photonic die and includes a substrate with optical nanostructures. Positions and shapes of the optical nanostructures are such to perform an optical transformation on the incident radiation of predetermined wavelength when the incident radiation passes through an area of the substrate where the optical nanostructures are located. The optical nanostructures overlie the grating coupler so that the incident radiation of predetermined wavelength crosses the optical die where the optical nanostructures are located before reaching the grating coupler.
    Type: Application
    Filed: October 13, 2022
    Publication date: February 2, 2023
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Yu-Kuang Liao, Jia-Xsing Li, Ping-Jung Wu, Tsang-Jiuh Wu, Wen-Chih Chiou, Chen-Hua Yu
  • Patent number: 11487060
    Abstract: A semiconductor device includes a photonic die and an optical die. The photonic die includes a grating coupler and an optical device. The optical device is connected to the grating coupler to receive radiation of predetermined wavelength incident on the grating coupler. The optical die is disposed over the photonic die and includes a substrate with optical nanostructures. Positions and shapes of the optical nanostructures are such to perform an optical transformation on the incident radiation of predetermined wavelength when the incident radiation passes through an area of the substrate where the optical nanostructures are located. The optical nanostructures overlie the grating coupler so that the incident radiation of predetermined wavelength crosses the optical die where the optical nanostructures are located before reaching the grating coupler.
    Type: Grant
    Filed: March 25, 2021
    Date of Patent: November 1, 2022
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Yu-Kuang Liao, Jia-Xsing Li, Ping-Jung Wu, Tsang-Jiuh Wu, Wen-Chih Chiou, Chen-Hua Yu
  • Publication number: 20220308284
    Abstract: A semiconductor device includes a photonic die and an optical die. The photonic die includes a grating coupler and an optical device. The optical device is connected to the grating coupler to receive radiation of predetermined wavelength incident on the grating coupler. The optical die is disposed over the photonic die and includes a substrate with optical nanostructures. Positions and shapes of the optical nanostructures are such to perform an optical transformation on the incident radiation of predetermined wavelength when the incident radiation passes through an area of the substrate where the optical nanostructures are located. The optical nanostructures overlie the grating coupler so that the incident radiation of predetermined wavelength crosses the optical die where the optical nanostructures are located before reaching the grating coupler.
    Type: Application
    Filed: March 25, 2021
    Publication date: September 29, 2022
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Yu-Kuang Liao, Jia-Xsing Li, Ping-Jung Wu, Tsang-Jiuh Wu, Wen-Chih Chiou, Chen-Hua Yu