Patents by Inventor Jia-Yi Fu

Jia-Yi Fu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Data writing method for non-volatile memory and controller using the same
    Patent number: 8117382
    Abstract: A data writing method for a non-volatile memory is provided, wherein the non-volatile memory includes a data area and a spare area. In the data writing method, a plurality of blocks in a substitution area of the non-volatile memory is respectively used for substituting a plurality of blocks in the data area, wherein data to be written into the blocks in the data area is written into the blocks in the substitution area, and the blocks in the substitution area are selected from the spare area of the non-volatile memory. A plurality of temporary blocks of the non-volatile memory is used as a temporary area of the blocks in the substitution area, wherein the temporary area is used for temporarily storing the data to be written into the blocks in the substitution area.
    Type: Grant
    Filed: August 22, 2011
    Date of Patent: February 14, 2012
    Assignee: Phison Electronics Corp.
    Inventors: Chih-Kang Yeh, Chien-Hua Chu, Jia-Yi Fu
  • DATA WRITING METHOD FOR NON-VOLATILE MEMORY AND CONTROLLER USING THE SAME
    Publication number: 20110302364
    Abstract: A data writing method for a non-volatile memory is provided, wherein the non-volatile memory includes a data area and a spare area. In the data writing method, a plurality of blocks in a substitution area of the non-volatile memory is respectively used for substituting a plurality of blocks in the data area, wherein data to be written into the blocks in the data area is written into the blocks in the substitution area, and the blocks in the substitution area are selected from the spare area of the non-volatile memory. A plurality of temporary blocks of the non-volatile memory is used as a temporary area of the blocks in the substitution area, wherein the temporary area is used for temporarily storing the data to be written into the blocks in the substitution area.
    Type: Application
    Filed: August 22, 2011
    Publication date: December 8, 2011
    Applicant: PHISON ELECTRONICS CORP.
    Inventors: Chih-Kang Yeh, Chien-Hua Chu, Jia-Yi Fu
  • Data writing method for non-volatile memory and controller using the same
    Patent number: 8055837
    Abstract: A data writing method for a non-volatile memory is provided, wherein the non-volatile memory includes a data area and a spare area. In the data writing method, a plurality of blocks in a substitution area of the non-volatile memory is respectively used for substituting a plurality of blocks in the data area, wherein data to be written into the blocks in the data area is written into the blocks in the substitution area, and the blocks in the substitution area are selected from the spare area of the non-volatile memory. A plurality of temporary blocks of the non-volatile memory is used as a temporary area of the blocks in the substitution area, wherein the temporary area is used for temporarily storing the data to be written into the blocks in the substitution area.
    Type: Grant
    Filed: October 1, 2010
    Date of Patent: November 8, 2011
    Assignee: Phison Electronics Corp.
    Inventors: Chih-Kang Yeh, Chien-Hua Chu, Jia-Yi Fu
  • Data writing method for non-volatile memory and controller using the same
    Patent number: 8001317
    Abstract: A data writing method for a non-volatile memory is provided, wherein the non-volatile memory includes a data area and a spare area. In the data writing method, a plurality of blocks in a substitution area of the non-volatile memory is respectively used for substituting a plurality of blocks in the data area, wherein data to be written into the blocks in the data area is written into the blocks in the substitution area, and the blocks in the substitution area are selected from the spare area of the non-volatile memory. A plurality of temporary blocks of the non-volatile memory is used as a temporary area of the blocks in the substitution area, wherein the temporary area is used for temporarily storing the data to be written into the blocks in the substitution area.
    Type: Grant
    Filed: February 4, 2008
    Date of Patent: August 16, 2011
    Assignee: Phison Electronics Corp.
    Inventors: Chih-Kang Yeh, Chien-Hua Chu, Jia-Yi Fu
  • DATA WRITING METHOD FOR NON-VOLATILE MEMORY AND CONTROLLER USING THE SAME
    Publication number: 20110022787
    Abstract: A data writing method for a non-volatile memory is provided, wherein the non-volatile memory includes a data area and a spare area. In the data writing method, a plurality of blocks in a substitution area of the non-volatile memory is respectively used for substituting a plurality of blocks in the data area, wherein data to be written into the blocks in the data area is written into the blocks in the substitution area, and the blocks in the substitution area are selected from the spare area of the non-volatile memory. A plurality of temporary blocks of the non-volatile memory is used as a temporary area of the blocks in the substitution area, wherein the temporary area is used for temporarily storing the data to be written into the blocks in the substitution area.
    Type: Application
    Filed: October 1, 2010
    Publication date: January 27, 2011
    Applicant: PHISON ELECTRONICS CORP.
    Inventors: Chih-Kang Yeh, Chien-Hua Chu, Jia-Yi Fu
  • DATA WRITING METHOD FOR NON-VOLATILE MEMORY AND CONTROLLER USING THE SAME
    Publication number: 20090106484
    Abstract: A data writing method for a non-volatile memory is provided, wherein the non-volatile memory includes a data area and a spare area. In the data writing method, a plurality of blocks in a substitution area of the non-volatile memory is respectively used for substituting a plurality of blocks in the data area, wherein data to be written into the blocks in the data area is written into the blocks in the substitution area, and the blocks in the substitution area are selected from the spare area of the non-volatile memory. A plurality of temporary blocks of the non-volatile memory is used as a temporary area of the blocks in the substitution area, wherein the temporary area is used for temporarily storing the data to be written into the blocks in the substitution area.
    Type: Application
    Filed: February 4, 2008
    Publication date: April 23, 2009
    Applicant: PHISON ELECTRONICS CORP.
    Inventors: Chih-Kang Yeh, Chien-Hua Chu, Jia-Yi Fu