Abstract: A semiconductor wafer includes: a first main surface and a second main surface opposite the first main surface; a detachment plane parallel to the first main surface inside the semiconductor wafer, the detachment plane defined by defects; electronic semiconductor components formed at the first main surface and between the first main surface and the detachment plane; and a glass structure attached to the first main surface. The glass structure includes openings, each of which leaves a respective area of the electronic semiconductor components uncovered. A method of processing the wafer, a clip, and a semiconductor device are also described.

Abstract: A method for processing a semiconductor wafer is provided. A semiconductor wafer includes a first main surface and a second main surface. Defects are generated inside the semiconductor wafer to define a detachment plane parallel to the first main surface. Processing the first main surface defines a plurality of electronic semiconductor components. A glass structure is provided which includes a plurality of openings. The glass structure is attached to the processed first main surface, each of the plurality of openings leaving a respective area of the plurality of electronic semiconductor components uncovered. A polymer layer is applied to the second main surface and the semiconductor wafer is split into a semiconductor slice and a remaining semiconductor wafer by cooling the polymer layer beneath its glass transition temperature along the detachment plane. The semiconductor slice includes the plurality of electronic semiconductor components.

Abstract: A semiconductor device and method is disclosed. The semiconductor device may include a semiconductor substrate including an active area, a metal layer structure over the active area, wherein the metal layer structure is configured to form an electrical contact, the metal layer structure including a solder area, a buffer area, and a barrier area between the solder area and the buffer area, wherein, in the barrier area, the metal layer structure is further away from the active area than in the solder area and in the buffer area, and wherein each of the solder area and the buffer area is in direct contact with the active area or with a wiring layer structure arranged between the active area and the metal layer structure.

Abstract: A method for processing a semiconductor wafer is provided. A semiconductor wafer includes a first main surface and a second main surface. Defects are generated inside the semiconductor wafer to define a detachment plane parallel to the first main surface. Processing the first main surface defines a plurality of electronic semiconductor components. A glass structure is provided which includes a plurality of openings. The glass structure is attached to the processed first main surface, each of the plurality of openings leaving a respective area of the plurality of electronic semiconductor components uncovered. A polymer layer is applied to the second main surface and the semiconductor wafer is split into a semiconductor slice and a remaining semiconductor wafer by cooling the polymer layer beneath its glass transition temperature along the detachment plane. The semiconductor slice includes the plurality of electronic semiconductor components.

Abstract: An electronic device and method is disclosed. In one example, the electronic device includes a semiconductor chip and a leadframe. The leadframe includes a first class of leads and a second class of leads. The leads of the second class of leads are thinner than leads of the first class of leads.

Abstract: A clip for a semiconductor package includes a first portion and a second portion. The first portion includes a first surface, a second surface opposite to the first surface and configured to contact a first electrically conductive component, and a stepped region between the first surface and the second surface such that the second surface has a smaller area than the first surface. The second portion is coupled to the first portion and configured to contact a second electrically conductive component. The second portion includes a third surface aligned with the first surface.

Abstract: A semiconductor chip package includes an electrically conducting carrier and a semiconductor chip disposed over the electrically conducting carrier. The semiconductor chip has a first surface facing the electrically conducting carrier and a second surface opposite the first surface. A metal plate has a first surface mechanically connected to the second surface of the semiconductor chip and a second surface opposite the first surface of the metal plate. The metal plate completely overlaps the second surface of the semiconductor chip. The second surface of the metal plate is at least partially exposed at a periphery of the semiconductor chip package.

Abstract: A semiconductor device and method is disclosed. The semiconductor device may include a semiconductor substrate including an active area, a metal layer structure over the active area, wherein the metal layer structure is configured to form an electrical contact, the metal layer structure including a solder area, a buffer area, and a barrier area between the solder area and the buffer area, wherein, in the barrier area, the metal layer structure is further away from the active area than in the solder area and in the buffer area, and wherein each of the solder area and the buffer area is in direct contact with the active area or with a wiring layer structure arranged between the active area and the metal layer structure.

Abstract: A metal heat slug having an upper and lower surface is provided. First and second electrically conductive leads are provided. First and second electrically insulating fastening mechanisms are provided. The first and second fastening mechanisms are adhered to the upper surface of the heat slug in an outer peripheral region of the heat slug such that the first and second leads are vertically separated from and electrically insulated from the heat slug. The central die attach region is exposed from the first and second fastening mechanisms after adhering the first and second fastening mechanisms to the upper surface of the heat slug.

Abstract: A metal heat slug having an upper and lower surface is provided. First and second electrically conductive leads are provided. First and second electrically insulating fastening mechanisms are provided. The first and second fastening mechanisms are adhered to the upper surface of the heat slug in an outer peripheral region of the heat slug such that the first and second leads are vertically separated from and electrically insulated from the heat slug. The central die attach region is exposed from the first and second fastening mechanisms after adhering the first and second fastening mechanisms to the upper surface of the heat slug.

Abstract: An electronic device and method is disclosed. In one example, the electronic device includes a semiconductor chip and a leadframe. The leadframe includes a first class of leads and a second class of leads. The leads of the second class of leads are thinner than leads of the first class of leads.

Abstract: A semiconductor chip package includes an electrically conducting carrier and a semiconductor chip disposed over the electrically conducting carrier. The semiconductor chip has a first surface facing the electrically conducting carrier and a second surface opposite the first surface. A metal plate has a first surface mechanically connected to the second surface of the semiconductor chip and a second surface opposite the first surface of the metal plate. The metal plate completely overlaps the second surface of the semiconductor chip. The second surface of the metal plate is at least partially exposed at a periphery of the semiconductor chip package.

Abstract: A method for forming of a thin film on a substrate is disclosed. The method includes cleaning a process chamber by flowing a first gas having fluorine. The method also includes coating the process chamber with a first encapsulating layer including amorphous silicon (A-Si) by flowing a second gas for a first duration, where the first encapsulating layer protects against fluorine contamination. The method further includes loading a substrate into the process chamber, depositing a thin film on the substrate by flowing a third gas into the process chamber and unloading the substrate from the process chamber. The thin film can include silicon nitride (SiN), the first gas can include nitrogen triflouride (NF3) gas and second gas can include silane (SiH4) gas. The thin film can be formed using plasma-enhanced chemical vapor deposition. The substrate can be a solar cell or a liquid crystal display (LCD).