Patents by Inventor Jia-Yo Lin

Jia-Yo Lin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • PHASE CHANGE MEMORY DEVICE AND FABRICATION THEREOF
    Publication number: 20120068147
    Abstract: A method for forming a phase change memory device is disclosed. A substrate with a bottom electrode thereon is provided. A heating electrode and a dielectric layer are formed on the bottom electrode, wherein the heating electrode is surrounded by the dielectric layer. The heating electrode is etched to form recess in the dielectric layer. A phase change material is deposited on the dielectric layer, filling into the recess. The phase change material is polished to remove a portion of the phase change material exceeding the surface of the dielectric layer and a phase change layer is formed confined in the recess of the dielectric layer. A top electrode is formed on the phase change layer and the dielectric layer.
    Type: Application
    Filed: November 23, 2011
    Publication date: March 22, 2012
    Applicant: POWERCHIP SEMICONDUCTOR CORP.
    Inventors: Jen-Chi CHUANG, Ming-Jeng HUANG, Chien-Min LEE, Jia-Yo LIN, Min-Chih WANG
  • PHASE CHANGE MEMORY DEVICES AND METHODS FOR FABRICATING THE SAME
    Publication number: 20110312150
    Abstract: A phase change memory device is provided, including a substrate, a first dielectric layer disposed over the substrate, a first electrode disposed in the first dielectric layer, a second dielectric layer formed over the first dielectric layer, covering the first electrode, a heating electrode disposed in the second dielectric layer, contacting the first electrode, a phase change material layer disposed over the second dielectric layer, contacting the heating electrode, and a second electrode disposed over the phase change material layer. In one embodiment, the heating electrode includes a first portion contacting the first electrode and a second portion contacting the phase change material layer, and the second portion of the heating electrode includes metal silicides and the first portion of the heating electrode includes no metal silicides.
    Type: Application
    Filed: August 26, 2011
    Publication date: December 22, 2011
    Applicant: POWERCHIP SEMICONDUCTOR CORP.
    Inventors: Chien-Min Lee, Ming-Jeng Huang, Jen-Chi Chuang, Jia-Yo Lin, Min-Chih Wang
  • PHASE CHANGE MEMORY DEVICE AND FABRICATION THEREOF
    Publication number: 20100213432
    Abstract: A method for forming a phase change memory device is disclosed. A substrate with a bottom electrode thereon is provided. A heating electrode and a dielectric layer are formed on the bottom electrode, wherein the heating electrode is surrounded by the dielectric layer. The heating electrode is etched to form recess in the dielectric layer. A phase change material is deposited on the dielectric layer, filling into the recess. The phase change material is polished to remove a portion of the phase change material exceeding the surface of the dielectric layer and a phase change layer is formed confined in the recess of the dielectric layer. A top electrode is formed on the phase change layer and the dielectric layer.
    Type: Application
    Filed: May 19, 2009
    Publication date: August 26, 2010
    Applicants: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE, POWERCHIP SEMICONDUCTOR CORP., NANYA TECHNOLOGY CORPORATION, PROMOS TECHNOLOGIES INC., WINBOND ELECTRONICS CORP.
    Inventors: Jen-Chi Chuang, Ming-Jeng Huang, Chien-Min Lee, Jia-Yo Lin, Min-Chih Wang
  • PHASE CHANGE MEMORY DEVICES AND METHODS FOR FABRICATING THE SAME
    Publication number: 20100133495
    Abstract: A phase change memory device is provided, including a substrate, a first dielectric layer disposed over the substrate, a first electrode disposed in the first dielectric layer, a second dielectric layer formed over the first dielectric layer, covering the first electrode, a heating electrode disposed in the second dielectric layer, contacting the first electrode, a phase change material layer disposed over the second dielectric layer, contacting the heating electrode, and a second electrode disposed over the phase change material layer. In one embodiment, the heating electrode includes a first portion contacting the first electrode and a second portion contacting the phase change material layer, and the second portion of the heating electrode includes metal silicides and the first portion of the heating electrode includes no metal silicides.
    Type: Application
    Filed: September 2, 2009
    Publication date: June 3, 2010
    Applicant: POWERCHIP SEMICONDUCTOR CORP.
    Inventors: Chien-Min Lee, Ming-Jeng Huang, Jen-Chi Chuang, Jia-Yo Lin, Min-Chih Wang