Abstract: A touch substrate manufacturing method, for manufacturing a target touch substrate to be assembled with a display substrate, is provided. A size of an active display region of the display substrate is a first preset size. The method includes: providing a touch substrate to be processed having a second preset size, the second preset size being greater than the first preset size; and cutting, in at least one cutting direction, the touch substrate to be processed to obtain the target touch substrate, the cutting direction being parallel to an extending direction of a touch channel on the touch substrate to be processed. A manufacturing method for touch module, a touch substrate and a touch module are also provided.

Abstract: A transistor may include a buffer layer, source and drain contacts on the buffer layer, a barrier layer on the buffer layer, a conductive member on the barrier layer, a dielectric stack, and a gate metal. The barrier layer may be between the source and drain contacts. The conductive member may include a p-doped III-V compound. The dielectric stack may be on the barrier layer and on the conductive member. The dielectric stack may include a first dielectric layer and a second dielectric layer on the first dielectric layer. First and second trenches may extend through the dielectric stack to the conductive member and to the first dielectric layer, respectively. The gate metal may be on the dielectric stack, and may contact the conductive member through the first trench and may contact the first dielectric layer through the second trench.

Abstract: Structures for a high-electron-mobility transistor and methods of forming a structure for a high-electron-mobility transistor. The high-electron-mobility transistor has a first semiconductor layer, a second semiconductor layer adjoining the first semiconductor layer along an interface, a gate electrode, and a source/drain region. An insulator region is provided in the first semiconductor layer and the second semiconductor layer. The insulator region extends through the interface at a location laterally between the gate electrode and the source/drain region.

Abstract: A transistor device may be provided, including a substrate; a buffer layer arranged over the substrate; a source terminal, a drain terminal, and a gate terminal arranged over the buffer layer; a barrier layer arranged over the buffer layer; and a passivation layer arranged over the barrier layer. The gate terminal may be arranged laterally between the source terminal and the drain terminal, the barrier layer may include a recess laterally between the gate terminal and the drain terminal, a part of the gate terminal may be arranged over the passivation layer and the passivation layer may extend into the recess of the barrier layer.

Abstract: According to various embodiments, a transistor device may include a semiconductor structure having a trench formed therein. The semiconductor structure may include a buffer layer and a barrier layer arranged over the buffer layer. The trench may extend at least to the buffer layer. The transistor device may include a source terminal, a drain terminal, and a gate terminal arranged between the source terminal and the drain terminal. The gate terminal may extend into the trench. The transistor device may include an electrode component. The electrode component may include an electrode. The electrode component may extend into the trench where the electrode component is separated from the gate terminal. The electrode component may contact a side wall of the trench.

Abstract: A transistor may include a buffer layer, source and drain contacts on the buffer layer, a barrier layer on the buffer layer, a conductive member on the barrier layer, a dielectric stack, and a gate metal. The barrier layer may be between the source and drain contacts. The conductive member may include a p-doped III-V compound. The dielectric stack may be on the barrier layer and on the conductive member. The dielectric stack may include a first dielectric layer and a second dielectric layer on the first dielectric layer. First and second trenches may extend through the dielectric stack to the conductive member and to the first dielectric layer, respectively. The gate metal may be on the dielectric stack, and may contact the conductive member through the first trench and may contact the first dielectric layer through the second trench.

Abstract: A transistor device may be provided, including a substrate; a buffer layer arranged over the substrate; a source terminal, a drain terminal, and a gate terminal arranged over the buffer layer; a barrier layer arranged over the buffer layer; and a passivation layer arranged over the barrier layer. The gate terminal may be arranged laterally between the source terminal and the drain terminal, the barrier layer may include a recess laterally between the gate terminal and the drain terminal, a part of the gate terminal may be arranged over the passivation layer and the passivation layer may extend into the recess of the barrier layer.

Abstract: Structures for a high-electron-mobility transistor and methods of forming a structure for a high-electron-mobility transistor. The high-electron-mobility transistor has a first semiconductor layer, a second semiconductor layer adjoining the first semiconductor layer along an interface, a gate electrode, and a source/drain region. An insulator region is provided in the first semiconductor layer and the second semiconductor layer. The insulator region extends through the interface at a location laterally between the gate electrode and the source/drain region.

Abstract: According to various embodiments, a transistor device may include a semiconductor structure having a trench formed therein. The semiconductor structure may include a buffer layer and a barrier layer arranged over the buffer layer. The trench may extend at least to the buffer layer. The transistor device may include a source terminal, a drain terminal, and a gate terminal arranged between the source terminal and the drain terminal. The gate terminal may extend into the trench. The transistor device may include an electrode component. The electrode component may include an electrode. The electrode component may extend into the trench where the electrode component is separated from the gate terminal. The electrode component may contact a side wall of the trench.