Patents by Inventor Jiadong ZANG

Jiadong ZANG has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Giant perpendicular magnetic anisotropy in Fe/GaN thin films for data storage and memory devices
    Patent number: 11031167
    Abstract: A giant perpendicular magnetic anisotropy (PMA) material comprises a III-V nitride substrate, and a layer of nitrogen disposed upon a surface of the III-V nitride substrate. The layer of nitrogen forms an N-terminated surface. The PMA material further comprises an iron film disposed upon the N-terminated surface. The III-V nitride substrate may be gallium nitride (GaN). A memory device using the PMA material may further comprise an input/output interface configured to communicate an address signal, a read/write signal and a data signal. The memory device may further comprise a controller configured to coordinate reading data from and writing data to the memory element.
    Type: Grant
    Filed: November 16, 2018
    Date of Patent: June 8, 2021
    Assignee: UNIVERSITY OF NEW HAMPSHIRE
    Inventors: Jiadong Zang, Jiexiang Yu
  • Giant Perpendicular Magnetic Anisotropy In Fe/GaN Thin Films For Data Storage And Memory Devices
    Publication number: 20190156983
    Abstract: A giant perpendicular magnetic anisotropy (PMA) material comprises a III-V nitride substrate, and a layer of nitrogen disposed upon a surface of the III-V nitride substrate. The layer of nitrogen forms an N-terminated surface. The PMA material further comprises an iron film disposed upon the N-terminated surface. The III-V nitride substrate may be gallium nitride (GaN). A memory device using the PMA material may further comprise an input/output interface configured to communicate an address signal, a read/write signal and a data signal. The memory device may further comprise a controller configured to coordinate reading data from and writing data to the memory element.
    Type: Application
    Filed: November 16, 2018
    Publication date: May 23, 2019
    Inventors: Jiadong Zang, Jiexiang Yu
  • Skyrmion based universal memory operated by electric current
    Patent number: 9773540
    Abstract: A method for generating a skyrmion, comprising: depositing a vertical metallic nanopillar electrode on a first side of a helimagnetic thin film, the helimagnetic thin film having a contact on a second side to provide a current drain; injecting a current through the vertical metallic nanopillar electrode to generate a rotating field; and applying a static upward magnetic field perpendicular to the helimagnetic thin film to maintain an FM phase background.
    Type: Grant
    Filed: July 18, 2016
    Date of Patent: September 26, 2017
    Assignee: THE JOHNS HOPKINS UNIVERSITY
    Inventors: Jiadong Zang, Chia-Ling Chien, Yufan Li, Roger K. Lake, Gen Yin
  • SKYRMION BASED UNIVERSAL MEMORY OPERATED BY ELECTRIC CURRENT
    Publication number: 20170018297
    Abstract: A method for generating a skyrmion, comprising: depositing a vertical metallic nanopillar electrode on a first side of a helimagnetic thin film, the helimagnetic thin film having a contact on a second side to provide a current drain; injecting a current through the vertical metallic nanopillar electrode to generate a rotating field; and applying a static upward magnetic field perpendicular to the helimagnetic thin film to maintain an FM phase background.
    Type: Application
    Filed: July 18, 2016
    Publication date: January 19, 2017
    Inventors: Jiadong ZANG, Chia-Ling CHIEN, Yufan LI, Roger K. LAKE, Gen YIN