Abstract: The present disclosure discloses a through-silicon-via structure and a method for preparing the same, a through-silicon-via interconnection structure and a method for preparing the same, and an electronic device, and belongs to the technical of semiconductors. The method includes forming an initial through hole running through a silicon-based substrate, forming a silicon oxide film on an inner wall of the initial through hole through oxidization, and removing the silicon oxide film to obtain a through-silicon-via structure with a through-silicon-via. The inner wall of the initial through hole will gradually tend to be smooth after being oxidized to form the silicon oxide film with a certain thickness, so that the inner wall of the through-silicon-via of the through-silicon-via structure formed after the silicon oxide film is removed is relatively smooth, which will not affect the quality of the conducting material subsequently grown on the inner wall of the through-silicon-via.

Abstract: This disclosure includes a method for fabricating an air bridge, an air bridge structure, and a superconducting quantum chip, and relates to the field of circuit structures. In some examples, a method for fabricating an air bridge includes forming an air bridge brace structure on a substrate, and forming, on the air bridge brace structure and the substrate, an air bridge material layer with one or more openings in the air bridge material layer that reveal the air bridge brace structure. The air bridge material layer with the one or more openings is formed based on a patterned photoresist layer with patterns corresponding to the one or more openings. The method further includes removing, based on the one or more openings in the air bridge material layer, the air bridge brace structure to obtain the air bridge having the one or more openings.

Abstract: A manufacturing method for an air bridge structure includes forming a first photoresist structure on a substrate. The first photoresist structure includes a first opening that reveals the substrate. The manufacturing method further includes forming a bridge supporting structure on the substrate by depositing an inorganic bridge supporting material on the substrate based on the first opening in the first photoresist structure, and stripping the first photoresist structure after the deposition. Then, the manufacturing method includes forming a second photoresist structure on the substrate. The second photoresist structure includes at least a second opening that reveals at least a portion of the bridge supporting structure on the substrate. Then, the method include forming the air bridge structure by depositing an air bridge material on the substrate based on the second opening and stripping the second photoresist structure after the deposition. Further, the bridge supporting structure can be removed.