Abstract: A semiconductor device and a method of forming the device are disclosed. In the semiconductor device, a shielded gate trench field effect transistor (FET) is formed in a cell region, and a super barrier rectifier (SBR) is formed in a non-cell region. In the SBR, a second dielectric layer has an upper dielectric layer and a lower dielectric layer, which are joined to each other smoothly by virtue of a beak-like portion. This avoids the presence of any sharp corner between the upper and lower dielectric layers and effectively mitigates the problem of an excessively small thickness of the upper dielectric layer at a bottom portion thereof, which tends to cause current leakage.