Abstract: A memory driving circuit is disclosed herein. The memory driving circuit includes a programmable current source, a reference voltage generation unit and a voltage comparator unit, The programmable current source generates a second current according to a first current. The second current flows into a memory cell, and produces a device voltage at the input of the memory cell. The reference voltage generation unit generates a crystal voltage. The voltage comparator unit compares the device voltage with the crystal voltage and sends out a control signal to control the programmable current source. The first current and the second current are adjusted by the control signal so that the shape of the current pulse of SET operation to the memory cell is well controlled.

Abstract: A memory driving circuit is disclosed herein. The memory driving circuit includes a programmable current source, a reference voltage generation unit and a voltage comparator unit, The programmable current source generates a second current according to a first current. The second current flows into a memory cell, and produces a device voltage at the input of the memory cell. The reference voltage generation unit generates a crystal voltage. The voltage comparator unit compares the device voltage with the crystal voltage and sends out a control signal to control the programmable current source. The first current and the second current are adjusted by the control signal so that the shape of the current pulse of SET operation to the memory cell is well controlled.

Abstract: A non-volatile memory cell and a non-volatile memory device are provided. The non-volatile memory cell includes a latch structure, a first read/write circuit, a first memristor, a second read/write circuit and a second memristor. The first read/write circuit controls a writing operation of the first memristor. The second read/write circuit controls a writing operation of the second memristor. When a restore operation is performed, the data in the latch structure is restored by using the resistance difference between the first memristor and the second memristor. The non-volatile device of the invention combines the advantages of fast memory unit and non-volatile memory, and it may work at a high speed and retain data when powered off.

Abstract: A non-volatile memory device includes plural non-memory cells. Each non-volatile memory cell includes a first switch, a first memristor, a second switch, a second memristor and a third switch. The control terminal of the first switch is coupled to a word line. The first memristor is provided with a first impedance. The control terminal of the second switch is coupled to the word line. The second memristor is provided with a second impedance. The first switch, the first memristor, the second switch and the second memristor are serially connected between a bit line and an inverted bit line in an alternate manner. The third switch is used for configuring the first impedance and the second impedance. The non-volatile memory device provided by the disclosure has a characteristic of quick access and the data stored therein does not require a dynamic update.

Abstract: A non-volatile memory cell and a non-volatile memory device are provided. The non-volatile memory cell includes a latch structure, a first read/write circuit, a first memristor, a second read/write circuit and a second memristor. The first read/write circuit controls a writing operation of the first memristor. The second read/write circuit controls a writing operation of the second memristor. When a restore operation is performed, the data in the latch structure is restored by using the resistance difference between the first memristor and the second memristor. The non-volatile device of the invention combines the advantages of fast memory unit and non-volatile memory, and it may work at a high speed and retain data when powered off.

Abstract: A memory driving circuit includes a current source configured to output a second current, a first switching unit configured to undergo switching to connect to the current source selectively to output the second current, a voltage generating unit configured to provide a reference voltage, a capacitive energy storage unit configured to store energy according to the reference voltage, a third switching unit configured to undergo switching to connect the voltage generating unit and the capacitive energy storage unit selectively, a second switching unit configured to undergo switching to connect the capacitive energy storage unit selectively to output a third current, and a current output terminal configured to output the second current, the third current, or the sum of the second current and the third current.

Abstract: A memory device includes a memory array, a word line driver, and source drivers. The memory array includes memory units. The memory units arranged in the same column are coupled to corresponding bit line. The memory units arranged in the same row are coupled to corresponding word line. The memory units arranged in the rows are divided into N groups, in which N is an integer greater than or equal to 2. The word line driver is configured to selectively enable the word lines. Source drivers are coupled to the memory units in the groups respectively and configured to output N source control signals. When any word line in a first group is enabled, the source control signals corresponding to the first group and a second group of which the sequence for read-write operation is next to the first group are controlled at a select level by corresponding source drivers.

Abstract: Techniques, apparatus and circuits based on magnetic or magnetoresistive tunnel junctions (MTJs). In one aspect, a programmable circuit device can include a magnetic tunnel junction (MTJ); a MTJ control circuit coupled to the MTJ to control the MTJ to cause a breakdown in the MTJ in programming the MTJ; and a sensing circuit coupled to the MTJ to sense a voltage under a breakdown condition of the MTJ.

Abstract: Techniques, apparatus and circuits based on magnetic or magnetoresistive tunnel junctions (MTJs). In one aspect, a programmable circuit device can include a magnetic tunnel junction (MTJ); a MTJ control circuit coupled to the MTJ to control the MTJ to cause a breakdown in the MTJ in programming the MTJ; and a sensing circuit coupled to the MTJ to sense a voltage under a breakdown condition of the MTJ.

Abstract: A magnetic memory cell and a magnetic memory incorporating the cell are described. The magnetic memory cell includes at least one magnetic element and a plurality of unidirectional polarity selection devices. The magnetic element(s) are programmable using write current(s) driven through the magnetic element. The unidirectional polarity selection devices are connected in parallel and such that they have opposing polarities. The magnetic memory may include a plurality of magnetic storage cells, a plurality of bit lines corresponding to the plurality of magnetic storage cells, and a plurality of source lines corresponding to the plurality of magnetic storage cells.

Abstract: A single transistor electrically erasable programmable memory device capable of being programmed and erased using Fowler-Nordheim tunneling and capable of being operated using low voltages. Portions of each of the source and drain regions overlap with the first gate dielectric layer, and the interpoly dielectric layer is chosen to have a high dielectric constant so as to maximize the capacitive coupling ratio between floating gate, control gate, source, and drain. The logical condition of cells in the array is set by first elevating a block of cells to a high voltage threshold and by individually lowering the voltage threshold of selected cells.

Abstract: A single transistor electrically erasable programmable memory device capable of being programmed and erased using Fowler-Nordheim tunneling and capable of being operated using low voltages. Portions of each of the source and drain regions overlap with the first gate dielectric layer, and the interpoly dielectric layer is chosen to have a high dielectric constant so as to maximize the capacitive coupling ratio between floating gate, control gate, source, and drain. The logical condition of cells in the array is set by first elevating a block of cells to a high voltage threshold and by individually lowering the voltage threshold of selected cells.

Abstract: A single transistor electrically erasable programmable memory device capable of being programmed and erased using Fowler-Nordheim tunneling and capable of being operated using low voltages. Portions of each of the source and drain regions overlap with the first gate dielectric layer, and the interpoly dielectric layer is chosen to have a high dielectric constant so as to maximize the capacitive coupling ratio between floating gate, control gate, source, and drain. The logical condition of cells in the array is set by first elevating a block of cells to a high voltage threshold and by individually lowering the voltage threshold of selected cells.

Abstract: A single transistor electrically erasable programmable memory device capable of being programmed and erased using Fowler-Nordheim tunneling and capable of being operated using low voltages. Portions of each of the source and drain regions overlap with the first gate dielectric layer, and the interpoly dielectric layer is chosen to have a high dielectric constant so as to maximize the capacitive coupling ratio between floating gate, control gate, source, and drain. The logical condition of cells in the array is set by first elevating a block of cells to a high voltage threshold and by individually lowering the voltage threshold of selected cells.

Abstract: In an integrated circuit having a plurality of function modules, each of the function modules having at least two inputs and at least one output. The integrated circuit is user programmable such that interconnections between selected ones of the function modules and input/output pins on the integrated circuit may be made. The integrated circuit further having two states, a first unprogrammed state where none of the interconnections have been made, and a second, programmed state in which selected interconnections have been made.

Abstract: An integrated circuit having a plurality of input/output modules, each of which has input/output modules including an input module section having an input node connected to a unique input/output pin on the integrated circuit and an output node communicating with a unique first internal node in the integrated circuit, and an output module section having an input node communicating with a unique second internal node in the integrated circuit and an output node communicating with the unique input/output pin. Each input/output module is programmable by a user such that its function may be defined as an input module, an output module, or a bi-directional module. The integrated circuit further has two states, a first unprogrammed state where none of the functions of the input/output modules have been defined, and a second, programmed state in which the functions of the input/output modules have been defined by either enabling or disabling the output section of the input/output module.

Abstract: In an integrated circuit including a first conductor disposed in a first direction, a plurality of second conductors forming intersections with the first conductor, and a plurality of antifuses connected between the first conductor and the second conductors at the intersections, a method for testing the integrity of the plurality of antifuses after attempting to program a selected one of the antifuses, including the steps of precharging each of the second conductors to a first preselected voltage potential such that a selected dynamic voltage is placed on each of the second conductors; placing a second voltage potential on the first conductor, wherein the difference between the first voltage potential and the second voltage potential is less than the voltage necessary to cause degradation of a good antifuse; waiting a preselected time; and sensing the voltage potential on each of the second conductors.

Abstract: In a user-configurable integrated circuit including a plurality of uncommitted conductors which may be programmably connected to one another and to functional circuit blocks by a user to form electronic circuits, apparatus for testing for defects in the form of breaks in the electrical continuity of individual ones of the conductors prior to formation of the electronic circuits by a user, including circuitry responsive to external signals for temporarily connecting together selected ones of the uncommitted conductors to form a series circuit having a first end conductor and a second end conductor, circuitry for placing an electrical charge on the first end conductor such that a selected dynamic voltage is placed on the first end conductor, circuitry for driving the second end conductor to a voltage different from the selected dynamic voltage, circuitry for sensing the voltage on the first end conductor at a predetermined time after the driving voltage has been removed, circuitry for storing a signal related t

Abstract: Apparatus for testing for defects in the form of ohmic leakage in an antifuse element disposed between first and second conductors in an integrated circuit prior to formation of electronic circuits by a user, includes circuitry, responsive to signals provided to the integrated circuit from an external source, for temporarily connecting together a first group of the conductors to form a circuit path to the first conductor during a first time period. Circuitry, responsive to signals provided to the integrated circuit from an external source, is provided to temporarily connect together a second group of the conductors to form a circuit path to the second conductor during the first time period. Circuitry is provided to place an electrical charge onto the first conductor during a second time period within the first time period such that a selected dynamic first voltage potential is placed on the first conductor.

Abstract: Apparatus for performing high voltage testing of high-voltage transistors in the programming paths of a user-configurable integrated circuit including a plurality of conductors which may be connected to one another and to functional circuit blocks by programming user-programmable antifuse elements connected thereto to form electronic circuits, prior to formation of the electronic circuits by a user, including circuitry, responsive to signals provided to the integrated circuit from an external source, for temporarily connecting together a first group of the conductors to form a circuit path, the circuit path including the source and drain of at least one of the high-voltage transistors during a selected time period; circuitry for driving the circuit path and the gate of the at least one high-voltage transistor to a first voltage potential during the selected time period; circuitry for driving the bulk semiconductor region in the integrated circuit containing the source and drain of the at least one high-voltag