Abstract: A collecting device includes a stage configured to place a substrate. A magnetic field generating unit holds, by a magnetic field, a first liquid containing a magnetic fluid and a collecting liquid to bring the first liquid into contact with at least an end portion of the substrate. A collecting unit collects the first liquid from the magnetic field generating unit. A separating unit separates the collecting liquid from the first liquid.

Abstract: The present invention provides a method for analyzing a silicon substrate, by which impurities such as a very small amount of metal in a silicon substrate provided with a thick nitride film can be analyzed with high accuracy with ICP-MS, and is characterized by use of a silicon substrate analysis apparatus including an analysis scan port having a load port, a substrate conveyance robot, an aligner, a drying chamber, a vapor phase decomposition chamber, an analysis stage and a nozzle for analysis of a substrate; an analysis liquid collection unit; and an analyzer for performing inductive coupling plasma analysis.

Abstract: An analysis apparatus includes a stage on which an analysis sample as an analysis target and a first adjustment sample used for adjusting a focus are provided. A laser generation unit generates a laser beam for vaporizing the analysis sample or the first adjustment sample by irradiating the sample with the laser beam. A detection unit detects a signal intensity of an element of the analysis sample or the first adjustment sample vaporized by irradiation with the laser beam. A controller determines a focus position of the laser beam with respect to a front surface position of the first adjustment sample based on the signal intensity of the first adjustment sample, and performs a control such that the focus position of the laser beam corresponds with a front surface of the analysis sample.

Abstract: According to one embodiment, an analysis apparatus includes a stage on which to place a sample, a light source, a film thickness measurement unit, and a controller. The light source generates a laser beam to irradiate the sample with the laser beam to cause vaporization of the sample. The film thickness measurer measures a thickness of the sample at a first position where the laser beam irradiates the sample. The controller controls at least one irradiation condition of the laser beam based on the measured thickness of the sample.

Abstract: A collecting device includes a stage configured to place a substrate. A magnetic field generating unit holds, by a magnetic field, a first liquid containing a magnetic fluid and a collecting liquid to bring the first liquid into contact with at least an end portion of the substrate. A collecting unit collects the first liquid from the magnetic field generating unit. A separating unit separates the collecting liquid from the first liquid.

Abstract: An analysis apparatus includes a stage on which an analysis sample as an analysis target and a first adjustment sample used for adjusting a focus are provided. A laser generation unit generates a laser beam for vaporizing the analysis sample or the first adjustment sample by irradiating the sample with the laser beam. A detection unit detects a signal intensity of an element of the analysis sample or the first adjustment sample vaporized by irradiation with the laser beam. A controller determines a focus position of the laser beam with respect to a front surface position of the first adjustment sample based on the signal intensity of the first adjustment sample, and performs a control such that the focus position of the laser beam corresponds with a front surface of the analysis sample.

Abstract: There are provided a network identity authentication method, a network identity authentication system, a user agent device used in the network identity authentication method and the network identity authentication system, and a computer-readable storage medium. The network identity authentication method includes: acquiring, by a user agent, identity information and a registration rule of a target website via a network terminal; acquiring registration information for the target website based on the identity information or generating registration information for the target website according to the registration rule; transmitting the identity information and the registration information to a server agent and sending, by the server agent based on the identity information and the registration information, an authentication request to a website server to complete an authentication process.

Abstract: The present invention provides a method for analyzing a silicon substrate, by which impurities such as a very small amount of metal in a silicon substrate provided with a thick nitride film can be analyzed with high accuracy with ICP-MS, and is characterized by use of a silicon substrate analysis apparatus including an analysis scan port having a load port, a substrate conveyance robot, an aligner, a drying chamber, a vapor phase decomposition chamber, an analysis stage and a nozzle for analysis of a substrate; an analysis liquid collection unit; and an analyzer for performing inductive coupling plasma analysis.

Abstract: An analysis pretreatment device according to an embodiment includes a chamber capable of containing an analysis object therein. A pressure reducer reduces pressure inside the chamber. An introducing part vaporizes a liquid and introduces the vaporized liquid into the chamber. A first supplier supplies water in a liquid state to the introducing part. A second supplier supplies hydrofluoric acid in a gas state to the introducing part. The introducing part introduces a mixed gas into the chamber. The mixed gas includes vaporized water, which is obtained by vaporizing water in a liquid state, and hydrofluoric acid in a gas state.

Abstract: According to one embodiment, an analysis apparatus includes a stage on which to place a sample, a light source, a film thickness measurement unit, and a controller. The light source generates a laser beam to irradiate the sample with the laser beam to cause vaporization of the sample. The film thickness measurer measures a thickness of the sample at a first position where the laser beam irradiates the sample. The controller controls at least one irradiation condition of the laser beam based on the measured thickness of the sample.

Abstract: There are provided a network identity authentication method, a network identity authentication system, a user agent device used in the network identity authentication method and the network identity authentication system, and a computer-readable storage medium. The network identity authentication method includes: acquiring, by a user agent, identity information and a registration rule of a target website via a network terminal; acquiring registration information for the target website based on the identity information or generating registration information for the target website according to the registration rule; transmitting the identity information and the registration information to a server agent and sending, by the server agent based on the identity information and the registration information, an authentication request to a website server to complete an authentication process.

Abstract: A metal collection solution according to an embodiment contains 48 wt % or more of HNO3, 6 wt % or less of HCl, and 5 wt % or less of HF. The metal collection solution can collect noble metals and can scan on a substrate. The metal collection solution can be used to collect the noble metals adhered to a surface of the substrate.

Abstract: An analysis pretreatment device according to an embodiment includes a chamber capable of containing an analysis object therein. A pressure reducer reduces pressure inside the chamber. An introducing part vaporizes a liquid and introduces the vaporized liquid into the chamber. A first supplier supplies water in a liquid state to the introducing part. A second supplier supplies hydrofluoric acid in a gas state to the introducing part. The introducing part introduces a mixed gas into the chamber. The mixed gas includes vaporized water, which is obtained by vaporizing water in a liquid state, and hydrofluoric acid in a gas state.

Abstract: A metal collection solution according to an embodiment contains 48 wt % or more of HNO3, 6 wt % or less of HCl, and 5 wt % or less of HF. The metal collection solution can collect noble metals and can scan on a substrate. The metal collection solution can be used to collect the noble metals adhered to a surface of the substrate.

Abstract: An aspect of the present invention relates to a method of etching a surface layer portion of a silicon wafer comprising: positioning the silicon wafer within a sealed vessel containing a mixed acid A of hydrofluoric acid and sulfuric acid so that the silicon wafer is not in contact with mixed acid A; introducing a solution B in the form of nitric acid containing nitrogen oxides into the sealed vessel and causing solution B to mix with mixed acid A; and vapor phase decomposing the surface layer portion of the silicon wafer within the sealed vessel within which mixed acid A and solution B have been mixed.

Abstract: An aspect of the present invention relates to a method of etching a surface layer portion of a silicon wafer comprising: positioning the silicon wafer within a sealed vessel containing a mixed acid A of hydrofluoric acid and sulfuric acid so that the silicon wafer is not in contact with mixed acid A; introducing a solution B in the form of nitric acid containing nitrogen oxides into the sealed vessel and causing solution B to mix with mixed acid A; and vapor phase decomposing the surface layer portion of the silicon wafer within the sealed vessel within which mixed acid A and solution B have been mixed.