Abstract: The invention discloses a method for determining the repair activity of NHEJ. In this method, HPRT gene is mutated by using a site-directed gene mutation technology, and plasmid transfection, and 6-TG treatment are performed. By means of the method of the invention, the NHEJ repair activity level of cells can be observed by measuring the cell viability. The method can be used for screening the effects of different drugs and different genes on the NHEJ repair activity.

Abstract: The invention discloses a method for determining the repair activity of NHEJ. In this method, HPRT gene is mutated by using a site-directed gene mutation technology, and plasmid transfection, and 6-TG treatment are performed. By means of the method of the invention, the NHEJ repair activity level of cells can be observed by measuring the cell viability. The method can be used for screening the effects of different drugs and different genes on the NHEJ repair activity.

Abstract: An autotransformer (AT) traction power supply system equipped with 2×27.5 kV outdoor modularized electric apparatus comprises a traction substation located beside an electrified railway, which connects with an up and a down line traction network at output terminal, a parallel apparatus located in the middle and the end of a feeder in the up and down line traction network, which functions as parallel power supply operation, and an over-zone apparatus located around a neutral section insulator between feeders of the up and down line traction network of two adjacent traction substations, which functions as over-zone power supply operation. The parallel apparatus connected with an AT equipment is a modularized electric apparatus which comprises four parallel power supply units. The AT equipment comprises four integrated AT substations which include the first AT, the second AT and an AT modularized electric apparatus.

Abstract: Methods to pattern features in a substrate layer by exposing a photoresist layer more than once. In one embodiment, a single reticle may be exposed more than once with an overlay offset implemented between successive exposures to reduce the half pitch of the reticle. In particular embodiments, these methods may be employed to reduce the half pitch of the features printed with 65 nm generation lithography equipment to achieve 45 nm lithography generation CD and pitch performance.

Abstract: An autotransformer (AT) traction power supply system equipped with 2×27.5 kV outdoor modularized electric apparatus comprises a traction substation located beside an electrified railway, which connects with an up and a down line traction network at output terminal, a parallel apparatus located in the middle and the end of a feeder in the up and down line traction network, which functions as parallel power supply operation, and an over-zone apparatus located around a neutral section insulator between feeders of the up and down line traction network of two adjacent traction substations, which functions as over-zone power supply operation. The parallel apparatus connected with an AT equipment is a modularized electric apparatus which comprises four parallel power supply units. The AT equipment comprises four integrated AT substations which include the first AT, the second AT and an AT modularized electric apparatus.

Abstract: Methods to pattern features in a substrate layer by exposing a photoresist layer more than once. In one embodiment, a single reticle may be exposed more than once with an overlay offset implemented between successive exposures to reduce the half pitch of the reticle. In particular embodiments, these methods may be employed to reduce the half pitch of the features printed with 65 nm generation lithography equipment to achieve 45 nm lithography generation CD and pitch performance.

Abstract: The present invention discloses a power transmission device, including a revolution shaft, a power transmission frame wheel rotatably and coaxially coupled to the revolution shaft, a plurality of spinning shaft symmetrically provided at outside edges of the power transmission frame. A plural of blades rotatably and coaxially coupled to respective spinning shaft, and a blade rotating arrangement connected to respective spinning shaft for managing a rotational direction and speed of the blades, such that when the revolution shaft is powered to rotate driving the power transmission frame into rotation, the spinning shaft provided at outer edges of the power transmission frame are capable of being rotated with a reversed direction with speed ratio of 1:2 for maximizing the wind bearing size of the blade in wind favorable condition and decreasing the wind bearing size in wind undesirable condition.

Abstract: An exemplary method of using developer as a solvent to spread photoresist faster and reduce photoresist consumption can include dispensing a developer solution onto an integrated circuit wafer, spinning the integrated circuit wafer to distribute the developer solution over the integrated circuit wafer, and dispensing a photoresist solution onto the integrated circuit covered with the developer solution.

Abstract: A method of fabricating an integrated circuit can include providing a layer of silicon nitride over a semiconductor substrate where the layer of silicon nitride has a first thickness selected based on a desired size of extensions; providing a layer of photoresist material over the layer of silicon nitride; patterning the layer of photoresist to form photoresist features being separated at the top of the photoresist features by one minimum lithographic feature and etching a portion of the layer of silicon nitride to form a hole for an integrated circuit device feature. The photoresist features include extensions at the bottom of the photoresist features. The extensions define footings. These footings reduce the separation at the bottom of the photoresist features. As such, exposed portions of the layer of silicon nitride are less than one minimum lithographic feature in width.

Abstract: An exemplary method of depositing photoresist material on an integrated circuit wafer is described. This method can include providing a cross-shaped resist dispenser including a plurality of resist dispense nozzles; dispensing photoresist material through the plurality of resist dispense nozzles to an integrated circuit wafer; and rotating at least one of the cross-shaped resist dispenser and the integrated circuit wafer.