Patents by Inventor Jia-Jie He

Jia-Jie He has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20020148402
    Abstract: Crystals of doped semiconductors and alloys are grown in a Czochralski process utilizing a single crucible. An upper heater around the crucible applies heat to an upper portion of the crucible while a lower heater below the upper heater applies heat to a lower portion of the crucible independently of the upper heater. A solid feed material in a lower portion of the crucible is maintained by the lower heater at a temperature below the melting point of the feed material, while the upper heater maintains an upper portion of the crucible at a higher temperature to provide a melt of the feed material in the upper portion of the crucible.
    Type: Application
    Filed: April 13, 2001
    Publication date: October 17, 2002
    Inventors: Sindo Kou, Jia-Jie He