Patents by Inventor Jiajie WU

Jiajie WU has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 12153004
    Abstract: A method for calculating a surface relaxation rate of a shale includes: a relaxation time T distribution curve and a pore throat radius r distribution curve are obtained through experiments; abscissas of the two distribution curves are standardized, and the abscissa of the relaxation time T distribution curve is expanded or shrunk to ensure an abscissa value corresponding to a maximum ordinate value in the transformed relaxation time T distribution curve is same as an abscissa value corresponding to a maximum ordinate value in the pore throat radius r distribution curve; straight lines with a number of N parallel to a y-axis of a combined curve graph including the two distribution curves are drawn and a ? value corresponding to each straight line is calculated; and ? value with the number of N are processed to obtain a final surface relaxation rate ??.
    Type: Grant
    Filed: August 29, 2024
    Date of Patent: November 26, 2024
    Assignees: Southwest Petroleum University, Sichuan Hengyi Petroleum Technology Services Co., Ltd, Shale Gas Research Institute, PetroChina Southwest Oil and Gas Field Company
    Inventors: Xinyang He, Kun Zhang, Chengzao Jia, Yan Song, Hulin Niu, Jing Li, Yijia Wu, Jiayi Liu, Bo Li, Yiming Yang, Liang Xu, Yongyang Liu, Jia He, Jiajie Wu, Zhi Gao, Tian Tang, Cheng Yang, Lei Chen, Xuefei Yang, Fengli Han, Xueying Wang, Weishi Tang, Jingru Ruan, Hengfeng Gou, Lintao Li, Yipeng Liu, Ping Liu
  • Publication number: 20240346809
    Abstract: The application provides an apparatus and a method for procedural video assessment. The apparatus includes: interface circuitry; and processor circuitry coupled to the interface circuitry and configured to: perform an action segmentation process for a procedural video received via the interface circuitry to obtain a plurality of action features associated with the procedure video; transform the plurality of action features into a plurality of action-procedure features based on an action-procedure relationship learning module for discovering a relationship between the plurality of action features and a plurality of scoring oriented procedures associated with the procedure video; and perform a procedure classification process to infer the plurality of scoring oriented procedures from the plurality of action-procedure features.
    Type: Application
    Filed: January 7, 2022
    Publication date: October 17, 2024
    Applicant: Intel Corporation
    Inventors: Ping GUO, Mee Sim LAI, Kuan Heng LEE, Wee Hoo CHEAH, Jason GARCIA, Liang QIU, Peng WANG, Jiajie WU, Xiangbin WU
  • Patent number: 12098379
    Abstract: A barley male sterility gene HvMSG47, wherein the gene HvMSG47 is (i) a nucleotide sequence as set forth in SEQ ID NO: 1. (ii) a nucleotide sequence as set forth in SEQ ID NO: 2, or (iii) a nucleotide sequence that has 90% or more homology with the nucleotide sequence of (i) or (ii) and expresses the same functional protein.
    Type: Grant
    Filed: April 19, 2022
    Date of Patent: September 24, 2024
    Assignee: SHANDONG AGRICULTURAL UNIVERSITY
    Inventors: Fei Ni, Daolin Fu, Juan Qi, Jiajie Wu
  • Publication number: 20240196621
    Abstract: A semiconductor device includes a base and a stack structure. The base includes a first surface defining at least one memory plane region. The stack structure is disposed on the first surface, and includes a first portion located at the edge of the memory plane region and a second portion different from the first portion. The first portion includes first contact structures penetrating through the stack structure in a first direction and extending to the base. The second portion includes second contact structures electrically connected with corresponding gate conductor layers in the stack structure. A top surface of the first contact structure away from the base is flush with a top surface of the second contact structure away from the base.
    Type: Application
    Filed: December 30, 2022
    Publication date: June 13, 2024
    Inventors: Zongliang Huo, Lei Xue, Wenbin Zhou, Wei Xu, Yanwei Shi, Zhengliang Xia, Han Yang, Xinwei Zou, Zhaohui Tang, Jiaji Wu, Cheng Chen
  • Publication number: 20230332172
    Abstract: A barley male sterility gene HvMSG47, wherein the gene HvMSG47 is (i) a nucleotide sequence as set forth in SEQ ID NO: 1, (ii) a nucleotide sequence as set forth in SEQ ID NO: 2, or (iii) a nucleotide sequence that has 90% or more homology with the nucleotide sequence of (i) or (ii) and expresses the same functional protein.
    Type: Application
    Filed: April 19, 2022
    Publication date: October 19, 2023
    Applicant: SHANDONG AGRICULTURAL UNIVERSITY
    Inventors: Fei NI, Daolin FU, Juan QI, Jiajie WU
  • Publication number: 20230304866
    Abstract: A temperature detector configured for use in a mobile terminal includes a lens, a collimator hole, and an infrared sensor that are arranged on an optical path. The lens is configured to converge ambient light, and the ambient light includes target area light and another area light. The collimator hole is used to obtain the target area light by screening and block the other area light. That is, the collimator hole screens the incident ambient light, and allows only the target area light to reach the infrared sensor.
    Type: Application
    Filed: May 30, 2023
    Publication date: September 28, 2023
    Applicant: HUAWEI TECHNOLOGIES CO., LTD.
    Inventors: Yufeng DAI, Li WANG, Jiajie WU
  • Publication number: 20230082694
    Abstract: The present disclosure discloses a semiconductor device, a three-dimensional memory and a method for fabricating the semiconductor device. The method includes forming a shallow trench isolation trench in a substrate. The substrate comprises an active region including a source region, a channel region, and a drain region. The shallow trench isolation trench is located on a periphery of the active region of the substrate. The method further comprises forming a bottom isolating layer in a bottom portion of the shallow trench isolation trench, forming a gate structure on a channel region of the substrate, and forming a hard insulating layer in an upper portion of the shallow trench isolation trench and on sidewalls of the active region, such that the hard insulating layer covers a source region and a drain region of the substrate.
    Type: Application
    Filed: July 22, 2022
    Publication date: March 16, 2023
    Inventors: Quan Zhang, Lan Yao, Jiaji Wu, Beibei Zhu
  • Patent number: 11566257
    Abstract: A Yr4DS gene of Aegilops tauschii and its use thereof in stripe rust resistance breeding of Triticeae plants. Said gene has a sequence as shown in SEQ ID NO. 1, SEQ ID NO. 3, SEQ ID NO. 5, SEQ ID NO. 7, SEQ ID NO. 9, or SEQ ID NO. 10.
    Type: Grant
    Filed: April 29, 2019
    Date of Patent: January 31, 2023
    Assignees: SHANDONG AGRICULTURAL UNIVERSITY, SICHUAN AGRICULTURAL UNIVERSITY
    Inventors: Daolin Fu, Chaozhong Zhang, Dengcai Liu, Lin Huang, Jiajie Wu, Huifei Zhang, Fei Ni, Lianquan Zhang, Ge Gao
  • Publication number: 20210403936
    Abstract: A Yr4DS gene of Aegilops tauschii and its use thereof in stripe rust resistance breeding of Triticeae plants. Said gene has a sequence as shown in SEQ ID NO. 1, SEQ ID NO. 3, SEQ ID NO. 5, SEQ ID NO. 7, SEQ ID NO. 9, or SEQ ID NO.10.
    Type: Application
    Filed: April 29, 2019
    Publication date: December 30, 2021
    Applicants: SHANDONG AGRICULTURAL UNIVERSITY, SICHUAN AGRICULTURAL UNIVERSITY
    Inventors: Daolin FU, Chaozhong ZHANG, Dengcai LIU, Lin HUANG, Jiajie WU, Huifei ZHANG, Fei NI, Lianquan ZHANG, Ge GAO
  • Patent number: 11187460
    Abstract: A device and method for reinforcing recycled aggregate based on in-situ C—S—H production including a first, second, third chamber, and a blast drier. A spray structure arranged on the top of the third chamber; the first and second chamber connected to the spray structure through pumps. A hollowed container arranged at the bottom of the spray structure. A certain gap reserved between the bottom of the container and the bottom of the third chamber, the bottom of the third chamber is provided with at least one drain outlet; the blast drier connected to the bottom of the third chamber, and a cover is arranged on the top of the third chamber. The first chamber contains calcium hydroxide solution. The second chamber contains a mixed solution of TEOS, water and anhydrous ethanol. The container is arranged in the third chamber, and the container is used to contain to-be-treated recycled aggregate.
    Type: Grant
    Filed: December 27, 2018
    Date of Patent: November 30, 2021
    Assignee: SHANDONG UNIVERSITY
    Inventors: Zhi Ge, Huaqiang Yuan, Renjuan Sun, Yanhua Guan, Xuechi Gao, Yufeng Bi, Zhichao Xue, Yanqiu Hu, Yujie Feng, Jiajie Wu, Xinlei Hu, Jin Qin, Yikai Wang
  • Publication number: 20210231371
    Abstract: A device and method for reinforcing recycled aggregate based on in-situ C—S—H production including a first, second, third chamber, and a blast drier. A spray structure arranged on the top of the third chamber; the first and second chamber connected to the spray structure through pumps. A hollowed container arranged at the bottom of the spray structure. A certain gap reserved between the bottom of the container and the bottom of the third chamber, the bottom of the third chamber is provided with at least one drain outlet; the blast drier connected to the bottom of the third chamber, and a cover is arranged on the top of the third chamber. The first chamber contains calcium hydroxide solution. The second chamber contains a mixed solution of TEOS, water and anhydrous ethanol. The container is arranged in the third chamber, and the container is used to contain to-be-treated recycled aggregate.
    Type: Application
    Filed: December 27, 2018
    Publication date: July 29, 2021
    Applicant: SHANDONG UNIVERSITY
    Inventors: Zhi GE, Huaqiang YUAN, Renjuan SUN, Yanhua GUAN, Xuechi GAO, Yufeng BI, Zhichao XUE, Yanqiu HU, Yujie FENG, Jiajie WU, Xinlei HU, Jin QIN, Yikai WANG