Patents by Inventor Jiajing He

Jiajing He has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for preparing ER- or ER/O-doped silicon-based luminescent material emitting communication band at room temperature, the luminescent material and ER- or ER/O-SI lasers
    Patent number: 11367998
    Abstract: A method for preparing an erbium (Er)- or erbium oxygen (Er/O)-doped silicon-based luminescent material emitting a communication band at room temperature. The method comprising the following steps: (a) doping a single crystalline silicon wafer with erbium ion implantation or co-doping the single crystalline silicon wafer with erbium ion and oxygen ion implantation simultaneously to obtain an Er- or Er/O-doped silicon wafer, wherein the single crystalline silicon wafer is a silicon wafer with a germanium epitaxial layer, or an SOI silicon wafer with silicon on an insulating layer or other silicon-based wafers; and (b) subjecting the Er- or Er/O-doped silicon wafer to a deep-cooling annealing treatment, the deep-cooling annealing treatment includes a temperature increasing process and a rapid cooling process.
    Type: Grant
    Filed: December 15, 2017
    Date of Patent: June 21, 2022
    Assignee: Shanghai Jiao Tong University
    Inventors: Yaping Dan, Huimin Wen, Jiajing He
  • METHOD FOR PREPARING ER- OR ER/O-DOPED SILICON-BASED LUMINESCENT MATERIAL EMITTING COMMUNICATION BAND AT ROOM TEMPERATURE, THE LUMINESCENT MATERIAL AND ER- OR ER/O-SI LASERS PREPARED
    Publication number: 20200366063
    Abstract: A method for preparing an erbium (Er)- or erbium oxygen (Er/O)-doped silicon-based luminescent material emitting a communication band at room temperature. The method comprising the following steps: (a) doping a single crystalline silicon wafer with erbium ion implantation or co-doping the single crystalline silicon wafer with erbium ion and oxygen ion implantation simultaneously to obtain an Er- or Er/O-doped silicon wafer, wherein the single crystalline silicon wafer is a silicon wafer with a germanium epitaxial layer, or an SOI silicon wafer with silicon on an insulating layer or other silicon-based wafers; and (b) subjecting the Er- or Er/O-doped silicon wafer to a deep-cooling annealing treatment, the deep-cooling annealing treatment includes a temperature increasing process and a rapid cooling process.
    Type: Application
    Filed: December 15, 2017
    Publication date: November 19, 2020
    Applicant: Shanghai Jiao Tong University
    Inventors: Yaping Dan, Huimin Wen, Jiajing He