Abstract: A read activity detector circuit for use in a random access memory array includes a plurality of synchronizer circuits operative to receive a plurality of respective reference clock signals having a frequency that is substantially the same as a core reference clock and having different phases relative to one another. Each of the synchronizer circuits, in response to a first control signal presented thereto, generates an output signal having a rising edge or a falling edge which is substantially aligned to a rising edge or a falling edge of the reference clock signal corresponding thereto. The activity detector circuit further includes a controller operative to receive the respective output signals from the plurality of synchronizer circuits and to generate an output signal as a function thereof which is indicative of data to be read from the random access memory array.

Abstract: This invention describes a new method of forming a double layer attenuating phase shifting mask. A first pattern is formed in a layer of attenuating phase shifting material and an alignment pattern is formed in a layer of opaque material. A first resist is used to form the first pattern. A pellicle is used to restrict the deposition of a second resist to the alignment region of the mask only and as a result neither the first resist nor the second resist must withstand dry etching steps. The first resist is removed before the step of forming the first pattern in the attenuating phase shifting material and cleaning before is step is carried out is thereby improved.

Abstract: This invention describes a new method of forming a double layer attenuating phase shifting mask. A first pattern is formed in a layer of attenuating phase shifting material and an alignment pattern is formed in a layer of opaque material. A first resist is used to form the first pattern. A pellicle is used to restrict the deposition of a second resist to the alignment region of the mask only and as a result neither the first resist nor the second resist must withstand dry etching steps. The first resist is removed before the step of forming the first pattern in the attenuating phase shifting material and cleaning before this step is carried out is thereby improved.