Patents by Inventor Jiajun Luo

Jiajun Luo has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20200263280
    Abstract: The present disclosure discloses an yttrium (Y)-added rare-earth permanent magnetic material and a preparation method thereof. A chemical formula of the material expressed in atomic percentage is (YxRE1-x)aFebalMbNc, wherein 0.05?x?0.4, 7?a?13, 0?b?3, 5?c?20, and the balance is Fe, namely, bal=100-a-b-c; RE represents a rare-earth element Sm, or a combination of the rare-earth element Sm and any one or more elements of Zr, Nd and Pr; M represents Co and/or Nb; and N represents nitrogen. In the preparation method, the rare-earth element Y is utilized to replace the element Sm of a samarium-iron-nitrogen material. By regulating a ratio of the element Sm to the element Y, viscosity of an alloy liquid can be reduced, and an amorphous forming ability of the material is enhanced.
    Type: Application
    Filed: February 14, 2020
    Publication date: August 20, 2020
    Inventors: Yang LUO, Xiao LIN, Guiyong WU, Jiajun XIE, Zilong WANG, Wenlong YAN, Zhongkai WANG, Dunbo YU
  • Patent number: 10729117
    Abstract: The present invention relates to a pest monitoring method based on machine vision. The method includes the following steps: arranging a pest trap at a place where pests gather, and setting an image acquisition device in front of the pest trap to acquire an image; identifying a pest in the acquired image, and obtaining a number of pests; extracting multiple suspicious pest images from a region of each identified pest in the image, and determining identification accuracy of each suspicious pest image, if the number of pests is greater than or equal to a preset threshold for the number of pests; and calculating a predicted level of pest damage based on the number of pests and the identification accuracy of each suspicious pest image. The present invention acquires a pest image automatically through the image acquisition device in front of the pest trap.
    Type: Grant
    Filed: December 25, 2017
    Date of Patent: August 4, 2020
    Assignee: ZHONGKAI UNIVERSITY OF AGRICULTURE AND ENGINEER
    Inventors: Yu Tang, Shaoming Luo, Zhenyu Zhong, Huan Lei, Chaojun Hou, Jiajun Zhuang, Weifeng Huang, Zaili Chen, Jintian Lin, Lixue Zhu
  • Publication number: 20200178511
    Abstract: The present invention relates to a pest monitoring method based on machine vision. The method includes the following steps: arranging a pest trap at a place where pests gather, and setting an image acquisition device in front of the pest trap to acquire an image; identifying a pest in the acquired image, and obtaining a number of pests; extracting multiple suspicious pest images from a region of each identified pest in the image, and determining identification accuracy of each suspicious pest image, if the number of pests is greater than or equal to a preset threshold for the number of pests; and calculating a predicted level of pest damage based on the number of pests and the identification accuracy of each suspicious pest image. The present invention acquires a pest image automatically through the image acquisition device in front of the pest trap.
    Type: Application
    Filed: December 25, 2017
    Publication date: June 11, 2020
    Inventors: Yu TANG, Shaoming LUO, Zhenyu ZHONG, Huan LEI, Chaojun HOU, Jiajun ZHUANG, Weifeng HUANG, Zaili CHEN, Jintian LIN, Lixue ZHU
  • Publication number: 20200036983
    Abstract: Embodiments of this application disclose an image file processing method performed at a computing device. The method includes: obtaining RGBA data corresponding to a first image in an image file, and separating the RGBA data to obtain RGB data and transparency data of the first image; encoding the RGB data of the first image according to a first video encoding mode, to generate first stream data; encoding the transparency data of the first image according to a second video encoding mode, to generate second stream data; and combining the first stream data and the second stream data into a stream data segment of the image file.
    Type: Application
    Filed: October 7, 2019
    Publication date: January 30, 2020
    Inventors: Shitao WANG, Xiaoyu LIU, Jiajun CHEN, Xiaozheng HUANG, Piao DING, Haijun LIU, Binji LUO, Xinxing CHEN
  • Patent number: 10516361
    Abstract: A space vector pulse width modulation (SVPWM) method for suppressing a common-mode voltage of a multiphase motor includes the following steps: (1) dividing all basic vectors of the multiphase motor into q types, and selecting therefrom x types having equal common-mode voltage magnitude of which an absolute value is smallest; (2) for each type in the x types of basic vectors, structuring y classes of auxiliary vectors according to an optimization model; (3) synthesizing reference vectors by virtue of the auxiliary vectors to obtain functioning time of basic vectors functioning in each switching period; and (4) obtaining an optimal functioning sequence of the basic vectors functioning in each switching period with fewest switching operations of a converter as a purpose. The present invention may effectively suppress a magnitude and frequency of the common-mode voltage of the multiphase motor without increasing calculation complexity or reducing other performance indexes.
    Type: Grant
    Filed: June 26, 2018
    Date of Patent: December 24, 2019
    Assignee: WUHAN UNIVERSITY
    Inventors: Yigang He, Jian Zheng, Qiwu Luo, Hui Zhang, Baiqiang Yin, Liulu He, Jiajun Duan
  • Publication number: 20190384879
    Abstract: Provided are a method and apparatus for estimating a meteorology sensitive load power. The method includes: obtaining a meteorology sensitive load power estimation model; inputting a daily load curve of a date to be estimated to the meteorology sensitive load power estimation model and extracting a daily load curve dimension reduction feature of the date to be estimated; and outputting a meteorology sensitive load power based on the daily load curve dimension reduction feature of the date to be estimated and mapping relationships from daily load curve dimension reduction features onto meteorology sensitive load powers. The proposed estimation model can directly obtain the meteorology sensitive load power curve from the daily load curve, and is especially applicable to cases where meteorology data is frequently lost in practical applications.
    Type: Application
    Filed: June 13, 2019
    Publication date: December 19, 2019
    Applicants: STATE GRID JIANGSU ELECTRIC POWER CO., LTD., STATE GRID CORPORATION OF CHINA, STATE GRID JIANGSU ELECTRIC POWER COMPANY RESEARCH INSTITUTE, HOHAI UNIVERSITY
    Inventors: Jijun Yin, Qing Chen, Zheng Wu, Xiao Lu, Jianyu Luo, Lin Liu, Jingbo Zhao, Ping Ju, Yanxiang Chen, Chuan Qin, Jiajun Shi, Shiwu Liao, Xinyao Zhu, Dajiang Wang
  • Publication number: 20190330074
    Abstract: The present invention discloses a multi-element perovskite material, and a single crystal, powder and a film thereof, as well as the applications thereof in photoluminescence and electroluminescence, in which the multi-element perovskite material is a multi-element fully-inorganic salt of non-lead metal halide and has a perovskite structure; and the chemical formula of the multi-element perovskite material is Cs2NaxAg1-xInyBi1-yCl6, wherein 0?x?1, 0?y?1. Meanwhile, based on the very strong self-trapped excitors states of the double perovskite, the present invention proposes a high-efficiency single-phase broadband phosphor and an electroluminescent device.
    Type: Application
    Filed: October 25, 2018
    Publication date: October 31, 2019
    Applicant: HUAZHONG UNIVERSITY OF SCIENCE AND TECHNOLOGY
    Inventors: Jiang Tang, Shunran Li, Guangda Niu, Jiajun Luo, Qingsong Hu, Jing Liu
  • Patent number: 10444187
    Abstract: Systems and methods can provide a fast and accurate way to measure conductivity and Hall effect, such that transient conductivities, transient carrier densities or transient mobilities can be measured on millisecond time scales, for example. The systems and methods can also reduce the minimum magnetic field needed to extract carrier density or mobility of a given sample, and reduce the minimum mobility that can be measured with a given magnetic field.
    Type: Grant
    Filed: August 30, 2017
    Date of Patent: October 15, 2019
    Assignee: Northwestern University
    Inventors: Matthew Grayson, Jiajun Luo
  • Publication number: 20190253015
    Abstract: A space vector pulse width modulation (SVPWM) method for suppressing a common-mode voltage of a multiphase motor includes the following steps: (1) dividing all basic vectors of the multiphase motor into q types, and selecting therefrom x types having equal common-mode voltage magnitude of which an absolute value is smallest; (2) for each type in the x types of basic vectors, structuring y classes of auxiliary vectors according to an optimization model; (3) synthesizing reference vectors by virtue of the auxiliary vectors to obtain functioning time of basic vectors functioning in each switching period; and (4) obtaining an optimal functioning sequence of the basic vectors functioning in each switching period with fewest switching operations of a converter as a purpose.
    Type: Application
    Filed: June 26, 2018
    Publication date: August 15, 2019
    Applicant: WUHAN UNIVERSITY
    Inventors: Yigang HE, Jian ZHENG, Qiwu LUO, Hui ZHANG, Baiqiang YIN, Liulu HE, Jiajun DUAN
  • Publication number: 20190230382
    Abstract: A picture file processing method, apparatus, and computer readable medium are provided. The method includes parsing a picture file, to obtain a picture header information data segment, first stream data, and second stream data of a first image thereof. The first stream data of the first image is decoded to generate red-green-blue (RGB) data of the first image. The second stream data of the first image is decoded to generate Alpha data of the first image. Red-green-blue-alpha (RGBA) data corresponding to the first image are generated according to the RGB data and the Alpha data.
    Type: Application
    Filed: April 3, 2019
    Publication date: July 25, 2019
    Applicant: TENCENT TECHNOLOGY (SHENZHEN) COMPANY LIMITED
    Inventors: Shitao WANG, Xiaoyu LIU, Jiajun CHEN, Xiaozheng HUANG, Piao DING, Haijun LIU, Binji LUO, Xinxing CHEN
  • Publication number: 20190019905
    Abstract: The present invention discloses a semiconductor radiation detector based on Bi-based quaternary halide single crystal and a manufacturing method, and relates to the technical field of ray imaging detector manufactured by a semiconductor material. The semiconductor radiation detector in this example includes: a light absorption layer made of Bi-based quaternary halide single crystal; an electron selective contact layer and a hole selective contact layer respectively provided on upper and lower sides of the light absorption layer; and two electrodes which are respectively in contact with the two charge selective contact layers and used as positive and negative electrodes of the device. The semiconductor radiation detector in the present invention has advantages such as high sensitivity, good stability and environmental friendliness.
    Type: Application
    Filed: November 24, 2017
    Publication date: January 17, 2019
    Inventors: Jiang TANG, Weicheng PAN, Haodi WU, Jiajun LUO, Guangda NIU, Ying ZHOU
  • Patent number: 10176287
    Abstract: The invention discloses an STI stress effect modeling method and device of an MOS device, and belongs to the technical field of parameter extraction modeling of devices. The method comprises the following steps: introducing the influence of temperature parameters on the STI stress effect of the MOS device, so as to form a function showing that the STI stress effect of the MOS device changes along with the temperature parameters; extracting the model parameter Model1 of the MOS device at normal temperature; on the basis of the Model1, extracting the parameter Model2 that the STI stress affects the properties of the MOS device at normal temperature; and on the basis of the Model2, extracting fitting parameters of the MOS device in the function so as to acquire final model parameters. The device comprises a first module, a second module, a third module and a fourth module.
    Type: Grant
    Filed: April 25, 2014
    Date of Patent: January 8, 2019
    Assignee: The Institute of Microelectronics of Chinese Academy of Science
    Inventors: Jianhui Bu, Shuzhen Li, Jiajun Luo, Zhengsheng Han
  • Publication number: 20180188205
    Abstract: Systems and methods can provide a fast and accurate way to measure conductivity and Hall effect, such that transient conductivities, transient carrier densities or transient mobilities can be measured on millisecond time scales, for example. The systems and methods can also reduce the minimum magnetic field needed to extract carrier density or mobility of a given sample, and reduce the minimum mobility that can be measured with a given magnetic field.
    Type: Application
    Filed: August 30, 2017
    Publication date: July 5, 2018
    Applicant: Northwestern University
    Inventors: Matthew Grayson, Jiajun Luo
  • Patent number: 9626467
    Abstract: The present invention provides a SOI MOS device modeling method. The SOI MOS device is one having a source-drain injection not reaching the bottom. The method comprises: a) establishing an overall model comprising a primary MOS device model simulating an SOI MOS device having the source-drain injection reaching the bottom, a source body PN junction bottom capacitance model simulating a source body PN junction bottom capacitance, and a drain body PN junction bottom capacitance model simulating a drain body PN junction bottom capacitance; and b) extracting parameters respectively for the primary MOS device model, the source body PN junction bottom capacitance model, and the drain body PN junction bottom capacitance model in the overall model. In the prior art, the source body junction bottom capacitance and the drain body junction bottom capacitance in the SOI MOS device having a source-drain injection not reaching the bottom affect the performances of the device.
    Type: Grant
    Filed: September 21, 2012
    Date of Patent: April 18, 2017
    Assignee: Institute of Microelectronics, Chinese Academy of Sciences
    Inventors: Jianhui Bu, Jinshun Bi, Jiajun Luo, Zhengsheng Han
  • Publication number: 20160259876
    Abstract: The invention discloses an STI stress effect modeling method and device of an MOS device, and belongs to the technical field of parameter extraction modeling of devices. The method comprises the following steps: introducing the influence of temperature parameters on the STI stress effect of the MOS device, so as to form a function showing that the STI stress effect of the MOS device changes along with the temperature parameters; extracting the model parameter Model1 of the MOS device at normal temperature; on the basis of the Model1, extracting the parameter Model2 that the STI stress affects the properties of the MOS device at normal temperature; and on the basis of the Model2, extracting fitting parameters of the MOS device in the function so as to acquire final model parameters. The device comprises a first module, a second module, a third module and a fourth module.
    Type: Application
    Filed: April 25, 2014
    Publication date: September 8, 2016
    Inventors: Jianhui Bu, Shuzhen Li, Jiajun Luo, Zhengsheng Han
  • Patent number: 9111995
    Abstract: A method for improving anti-radiation performance of SOI structure that includes implementing particle implantations of high-energy neutrons, protons and ?-rays to a buried oxide layer of an SOI structure, and then performing annealing process. The high-energy particle implantation introduces displacement damage to the buried oxide layer of the SOI structure.
    Type: Grant
    Filed: October 25, 2012
    Date of Patent: August 18, 2015
    Assignee: Institute of Microelectronics, Chinese Academy of Sciences
    Inventors: Yinxue Lv, Jinshun Bi, Jiajun Luo, Zhengsheng Han, Tianchun Ye
  • Publication number: 20150178429
    Abstract: The present invention provides a SOI MOS device modeling method. The SOI MOS device is one having a source-drain injection not reaching the bottom. The method comprises: a) establishing an overall model comprising a primary MOS device model simulating an SOI MOS device having the source-drain injection reaching the bottom, a source body PN junction bottom capacitance model simulating a source body PN junction bottom capacitance, and a drain body PN junction bottom capacitance model simulating a drain body PN junction bottom capacitance; and b) extracting parameters respectively for the primary MOS device model, the source body PN junction bottom capacitance model, and the drain body PN junction bottom capacitance model in the overall model. In the prior art, the source body junction bottom capacitance and the drain body junction bottom capacitance in the SOI MOS device having a source-drain injection not reaching the bottom affect the performances of the device.
    Type: Application
    Filed: September 21, 2012
    Publication date: June 25, 2015
    Inventors: Jianhui Bu, Jinshun Bi, Jiajun Luo, Zhengsheng Han
  • Publication number: 20150177312
    Abstract: The present invention provides a method for determining PN junction depth comprising: a) measuring a square resistance in a well region; b) forming a junction type field effect transistor in the well region, changing a gate electrode voltage and measuring a source-drain resistance; c) calculating the PN junction depth according to the measured square resistance, source-drain resistance and related process parameters of the junction type field effect transistor. As compared with the prior art, the technical solution in this invention determines the PN junction depth by electrical measurement, is thus simple and feasible, and has better repeatability.
    Type: Application
    Filed: September 21, 2012
    Publication date: June 25, 2015
    Inventors: Jianhui Bu, Jinshun Bi, Jiajun Luo, Zhengsheng Han
  • Publication number: 20150170915
    Abstract: The present invention provides a method for manufacturing a semiconductor structure, which is characterized in comprising following steps: providing an SOI substrate for forming a semiconductor structure; the SOI substrate comprises a monocrystalline silicon top layer, a buried oxide layer and a support substrate; and forming an amorphous region outside the area for forming a channel region of the semiconductor structure in the monocrystalline silicon top layer. The method provided by the present invention can effectively improve reliability of a gate dielectric layer formed on the SOI substrate.
    Type: Application
    Filed: September 21, 2012
    Publication date: June 18, 2015
    Applicant: Institute of Microelectroncis, Chinese Academy of Science
    Inventors: Jinshun Bi, Jiajun Luo, Zhengsheng Han
  • Publication number: 20140349463
    Abstract: The present invention provides a method for improving anti-radiation performance of SOI structure comprising following steps: implementing particle implantations of high-energy neutrons, protons and ?-rays to an SOI structure, and then performing annealing process. The present invention aims to improving anti-radiation performance of SOI devices by means of introducing displacement damage into a buried oxide layer through implantation of high-energy particles.
    Type: Application
    Filed: October 25, 2012
    Publication date: November 27, 2014
    Inventors: Yinxue Lv, Jinshun Bi, Jiajun Luo, Zhengsheng Han, Tianchun Ye