Abstract: Disclosed are a display substrate, a display panel and a display device. The display substrate includes: a base substrate, multiple gate-line groups, multiple data lines, the multiple data line include: first type of data lines and second type of data lines alternately arranged along the first direction; multiple transistors, transistors in the same sub-transistor group are connected with the same gate line, transistors in adjacent sub-transistor groups are connected with different gate lines, and transistors of the same sub-transistor group are connected with different data lines; multiple pins, the multiple pins include: first type of pins and second type of pins alternately arranged along the first direction; two adjacent first type of data lines are connected with a same first type of pin, and adjacent second type of data lines are connected with a same second type of pin.

Abstract: A component includes a magnetic core having a body formed of a first material, defining a first opening and a second opening thereon. A duct formed of a second material extends at least partially through the body between the first opening and the second opening. The first opening and the second opening are in fluid communication by way of the duct.

Abstract: A component includes a magnetic core having a body formed of a first material, defining a first opening and a second opening thereon. A duct formed of a second material extends at least partially through the body between the first opening and the second opening. The first opening and the second opening are in fluid communication by way of the duct.

Abstract: In certain examples, methods and semiconductor structures are directed to a switching (power) amplification circuit, including resonance circuitry to resonate at a frequency associated with at least one of a plurality of different selectable resonance frequencies. The switching amplification circuit is configured to deliver power to one or multiple loads while the switching amplifier circuit is operating based on one or more of the selectable resonance frequencies.

Abstract: In a cryogenic workbench, a cryogenic laser peening system and a control method, a tapered surface gap d is adjusted, based on the electromagnetic principle, to control the gasification volume of liquid nitrogen, then the temperatures of the copious cooling workbench and the surface of a sample are precisely controlled by means of the adjustment of the heat absorption amount of liquid nitrogen gasification, the temperature adjustment range and the temperature rising/lowering rate of the cryogenic laser peening system are effectively extended, and the precision of the control of the surface temperature of the sample is increased in combination with a closed-loop control. Additionally, an intelligent control of a cryogenic laser peening process is realized by means of a computer and a PLC control unit, whereby the usage amount of liquid nitrogen in the experiment process is reduced and the processing efficiency is improved.

Abstract: A component includes a magnetic core having a body formed of a first material, defining a first opening and a second opening thereon. A duct formed of a second material extends at least partially through the body between the first opening and the second opening. The first opening and the second opening are in fluid communication by way of the duct.

Abstract: In a cryogenic workbench, a cryogenic laser peening system and a control method. A a tapered surface gap d is adjusted, based on the electromagnetic principle, to control the gasification volume of liquid nitrogen, then the temperatures of the copious cooling workbench and the surface of a sample are precisely controlled by means of the adjustment of the heat absorption amount of liquid nitrogen gasification, the temperature adjustment range and the temperature rising/lowering rate of the cryogenic laser peening system are effectively extended, and the precision of the control of the surface temperature of the sample is increased in combination with a closed-loop control. Additionally, an intelligent control of a cryogenic laser peening process is realized by means of a computer and a PLC control unit, whereby the usage amount of liquid nitrogen in the experiment process is reduced and the processing efficiency is improved.

Abstract: A cryogenic laser shock strengthening method and apparatus based on a laser-induced high temperature plasma technology includes: liquid nitrogen doped with absorber powder is irradiated using high power laser beams, to generate partial high temperature plasma, the liquid nitrogen quickly vaporizes and expands under the action of the high temperature plasma to form high-speed high-pressure air streams, and the high-speed high-pressure air streams shock a metal surface in a low temperature environment to implement the strengthening of the surface. In addition, continuous pressure accumulation of a vaporization cavity can be implemented by means of multiple laser pulses to further increase the shock wave pressure of a metal surface, thereby improving the surface strengthening effect of the metal surface.

Abstract: In specific examples, aspects are directed towards eliminating, mitigating or reducing gate loss in circuits including, for example, WBG power devices. One such example is directed towards an apparatus including first and second types of field-effect transistor (FET), where the first type is characterized as being a normally-on FET in a switching-circuit operation with a high-voltage rating, and the second type of FET is characterized as being a normally-off FET in a switching-circuit operation with a voltage rating that is much less than the high-voltage rating of the first type of FET circuit. The FET are arranged in a cascode manner so that, in response to a switching control signal received by the second type of FET circuit, the second type of FET circuit is active to drive the first type of FET.

Abstract: In specific examples, aspects are directed towards eliminating, mitigating or reducing gate loss in circuits including, for example, WBG power devices. One such example is directed towards an apparatus including first and second types of field-effect transistor (FET), where the first type is characterized as being a normally-on FET in a switching-circuit operation with a high-voltage rating, and the second type of FET is characterized as being a normally-off FET in a switching-circuit operation with a voltage rating that is much less than the high-voltage rating of the first type of FET circuit. The FET are arranged in a cascode manner so that, in response to a switching control signal received by the second type of FET circuit, the second type of FET circuit is active to drive the first type of FET.