Abstract: A method for manufacturing a vertical blue light emitting diode (LED) includes: bonding a growth substrate to a conductive substrate; peeling off the growth substrate; etching the nitride epitaxial layer to remove the buffer layer and the undoped GaN layer and to thin the N-type GaN layer, such that a thickness of a residual nitride epitaxial layer is less than a wavelength of blue light; and forming an N-type electrode on a surface of a residual N-type GaN layer.

Abstract: A vertical blue LED includes: a conductive substrate, the conductive substrate including a first surface and a second surface opposite to the first surface a nitride epitaxial layer; a metal reflective layer, positioned on the first surface; a nitride epitaxial layer, positioned on a surface of the metal reflective layer and including a P-type GaN layer, a quantum well layer, a preparation layer, and an N-type GaN layer that are sequentially stacked along a direction perpendicular to the conductive substrate, wherein a thickness of the nitride epitaxial layer is less than a wavelength of blue light; an N-type electrode, positioned on a surface of the N-type GaN layer; and a P-type electrode, positioned on the second surface.

Abstract: An integrated device and a fabrication method thereof are provided. In the device, by using various anisotropic silicon etching techniques, the silicon substrate layer and the expitaxial buffer layer under the device structure are removed, an ultra-thin device monolithically integrated with a suspended LED, an optical waveguide and a photodetector is obtained by further using the nitride back thinning etching technique. In the device, the light source, the optical waveguide and the photodetector are integrated on the same chip. The light emitted by the LED is laterally coupled to the optical waveguide, transmitted over the optical waveguide, and detected by the photodetector at the other end of the optical waveguide, thereby achieving a planar photon monolithically integrated device which is applied in the fields of optical transmission and optical sensing.

Abstract: By using various anisotropic silicon etching techniques, a silicon substrate layer (1) and an epitaxial buffer layer (2) under the device structure are removed to obtain a monolithic photonic integration of silicon substrate suspended light-emitting diode (LED) with optical waveguide, and an ultra-thin device monolithically integrated with a suspended LED and an optical waveguide is obtained by further using the nitride back thinning etching technique. Therefore, internal loss of the LED is reduced and light emitting efficiency is improved. In the device according to the present disclosure, the light source and the optical waveguide are integrated on the same wafer, which solves the problem of monolithic integration of planar photons, enables the light emitted by the LED to be transmitted along the optical waveguide, addresses the problem of transmission of light in the optical waveguide, and implements the function of transmitting light within a plane.

Abstract: An integrated device and a fabrication method thereof are provided. In the device, by using various anisotropic silicon etching techniques, the silicon substrate layer and the expitaxial buffer layer under the device structure are removed, an ultra-thin device monolithically integrated with a suspended LED, an optical waveguide and a photodetector is obtained by further using the nitride back thinning etching technique. In the device, the light source, the optical waveguide and the photodetector are integrated on the same chip. The light emitted by the LED is laterally coupled to the optical waveguide, transmitted over the optical waveguide, and detected by the photodetector at the other end of the optical waveguide, thereby achieving a planar photon monolithically integrated device which is applied in the fields of optical transmission and optical sensing.

Abstract: By using various anisotropic silicon etching techniques, a silicon substrate layer (1) and an expitaxial buffer layer (2) under the device structure are removed to obtain a monolithic photonic integration of silicon substrate suspended light-emitting diode (LED) with optical waveguide, and an ultra-thin device monolithically integrated with a suspended LED and an optical waveguide is obtained by further using the nitride back thinning etching technique. Therefore, internal loss of the LED is reduced and light emitting efficiency is improved. In the device according to the present disclosure, the light source and the optical waveguide are integrated on the same wafer, which solves the problem of monolithic integration of planar photons, enables the light emitted by the LED to be transmitted along the optical waveguide, addresses the problem of transmission of light in the optical waveguide, and implements the function of transmitting light within a plane.