Abstract: A semiconductor processing composition for removing residues and/or contaminants from substrate containing Cu, barrier metal and low-k dielectric. The processing composition includes at least one quaternary base, at least one organic amine, at least one surface modifier, at least one antioxidant, at least one complexing agent and balance water. The processing composition provides a sufficient corrosion protection to Cu and metal barrier during process queue time without deteriorating reliability of electronic devices.

Abstract: A thermally conductive interface composition is interposed between a heat generating component and a heat dissipating component. To meet escalated heat dissipation for performance demanding devices, a thermally conductive interface composition comprises (A) A linear alkenyl organopolysiloxane containing a silicon-bonded alkenyl-terminated group or groups, (B) A branched alkenyl organopolysiloxane containing at least two silicon-bonded alkenyl groups, (C) thermally conductive fillers in a ternary particle size mixture, (D) An organohydrogenpolysiloxane containing at least two Si—H terminated groups, (E) An addition reaction catalyst, (F) A hydroxy group-containing siloxane, (G) Alkoxy group-containing siloxanes.

Abstract: A thermally conductive interface composition is interposed between a heat generating component and a heat dissipating component. To meet escalated heat dissipation for performance demanding devices, a thermally conductive interface composition comprises (A) A linear alkenyl organopolysiloxane containing a silicon-bonded alkenyl-terminated group or groups, (B) A branched alkenyl organopolysiloxane containing at least two silicon-bonded alkenyl groups, (C) thermally conductive fillers in a ternary particle size mixture, (D) An organohydrogenpolysiloxane containing at least two Si—H terminated groups, (E) An addition reaction catalyst, (F) A hydroxy group-containing siloxane, (G) Alkoxy group-containing siloxanes.

Abstract: This disclosure relates post chemical mechanical planarization cleaning composition of semiconductor substrate for advanced electronics fabrication and packaging. It provides novel corrosion inhibition and quality upmost Cu-low K surfaces to the demanding reliability of nano device and Cu interconnection. Its efficacious cleaning without changing of ultra-low K dielectric and interfering with ultimate electronics performance also offers a cleaning solution to the Cu-low K structure of post reactive ion etching as well as resist ashing in semiconductor fabrication process flow.

Abstract: This disclosure relates post chemical mechanical planarization cleaning composition of semiconductor substrate for advanced electronics fabrication and packaging. It provides novel corrosion inhibition and quality upmost Cu-low K surfaces to the demanding reliability of nano device and Cu interconnection. Its efficacious cleaning without changing of ultra-low K dielectric and interfering with ultimate electronics performance also offers a cleaning solution to the Cu-low K structure of post reactive ion etching as well as resist ashing in semiconductor fabrication process flow.

Abstract: A thermally conductive interface material is in need to electronic packaging to meet escalated heat dissipation for performance demanding electronics. To survive thermal mismatch introduced stress at an interface of nominal thickness of 200 um and below between electronic component and heat spreader, a thermally conductive silicone gel comprises (A) a trimethyl-terminated organopolysiloxane containing a silicone-bonded alkenyl group or groups, (B) an alkeny-terminated organopolysiloxane, (C) thermally conductive filler with addition of nano particles, (D) an organohydrogen-polysiloxane, (E) an addition reaction catalyst, (F) a catalytic reaction inhibitor, and (G) an alkoxysilane bonding agent. The interface material provides thermal conductivity with low complex storage modulus.

Abstract: A ternary particle size filler composition with addition of nano particles is provided to formulate thermally conductive interface materials such as soft gel having a high thermal conductivity, a relative low viscosity, and a low complex storage modulus. The thermally conductive material containing thermal particle composition and polymer matrix is used to create a thermal transfer path between the electronic component and the heat dissipation member. The composition is a mixture of a ternary particle size fillers constituted of the same or different chemical compounds in a predefined size ranges and volume ratios in terms of low viscosity and thermal interface nominal size. A silicone based polymer used as filler bonding matrix contains base resin, dispersant, cross-linker and polymerization catalyst. Thermal conductivity of the soft gel varied according to the change of volume percentage, particle size, and chemical compound of individual thermal particles.

Abstract: A ternary particle size filler composition with addition of nano particles is provided to formulate thermally conductive interface materials such as soft gel having a high thermal conductivity, a relative low viscosity, and a low complex storage modulus. The thermally conductive material containing thermal particle composition and polymer matrix is used to create a thermal transfer path between the electronic component and the heat dissipation member. The composition is a mixture of a ternary particle size fillers constituted of the same or different chemical compounds in a predefined size ranges and volume ratios in terms of low viscosity and thermal interface nominal size. A silicone based polymer used as filler bonding matrix contains base resin, dispersant, cross-linker and polymerization catalyst. Thermal conductivity of the soft gel varied according to the change of volume percentage, particle size, and chemical compound of individual thermal particles.

Abstract: The present invention provides chip containing electronic devices such as Multichip Ceramic Modules (MCM's) containing a plurality of chips on a substrate which chips are underfilled with a reworkable composition which allows one or more chips to be removed from the device and replaced. The reworkable compositions contain a base resin which is not cross-linkable and which forms a matrix with a linear curable component or preferably a combination of linear curable components which curable components are cross-linkable and when cured form a cross-linked domain in the base resin matrix. A suitable cross-linking catalyst such as Pt is used and optionally a filler preferably silane surface treated silica. The preferred base resin is linear polydimethylsiloxane and the preferred curable components are vinyl terminated linear poly dimethyl siloxane and hydrogen terminated linear poly dimethyl siloxane.

Abstract: The present invention provides chip containing electronic devices such as Multichip Ceramic Modules (MCM's) containing a plurality of chips on a substrate which chips are underfilled with a reworkable composition which allows one or more chips to be removed from the device and replaced. The reworkable compositions contain a base resin which is not cross-linkable and which forms a matrix with a linear curable component or preferably a combination of linear curable components which curable components are cross-linkable and when cured form a cross-linked domain in the base resin matrix. A suitable cross-linking catalyst such as Pt is used and optionally a filler preferably silane surface treated silica. The preferred base resin is linear polydimethylsiloxane and the preferred curable components are vinyl terminated linear poly dimethyl siloxane and hydrogen terminated linear poly dimethyl siloxane.

Abstract: A method to reduce liquid polymer macromolecule mobility through forming a polymer blend system is provided. More particularly, a small amount of polymer crosslinker is added to a liquid polymer matrix to prevent intermolecular movement. The crosslinker functions as cages to block linear or branched linear macromolecules and prevent them from sliding into each other.

Abstract: A liquid thermal interface (LTI) including a mixture of a linearly structured polymer doped with crosslinked networks and related method are presented. The LTI exhibits reduced liquid polymer macromolecule mobility, and thus increased surface tension. An embodiment of the method includes mixing a crosslinker with a linearly structured polymer to form a mixture, wherein the crosslinker includes a base agent including a vinyl-terminated or branched polydimethylsiloxane, and a curing agent including a hydrogen-terminated polydimethylsiloxane; and curing the mixture. The crosslinker functions as cages to block linear or branched linear macromolecules and prevents them from sliding into each other, thus increasing surface tension of the resulting LTI.

Abstract: A liquid thermal interface (LTI) including a mixture of a linearly structured polymer doped with crosslinked networks and related method are presented. The LTI exhibits reduced liquid polymer macromolecule mobility, and thus increased surface tension. An embodiment of the method includes mixing a crosslinker with a linearly structured polymer to form a mixture, wherein the crosslinker includes a base agent including a vinyl-terminated or branched polydimethylsiloxane, and a curing agent including a hydrogen-terminated polydimethylsiloxane; and curing the mixture. The crosslinker functions as cages to block linear or branched linear macromolecules and prevents them from sliding into each other, thus increasing surface tension of the resulting LTI.

Abstract: A method to reduce liquid polymer macromolecule mobility through forming a polymer blend system is provided. More particularly, a small amount of polymer crosslinker is added to a liquid polymer matrix to prevent intermolecular movement. The crosslinker functions as cages to block linear or branched linear macromolecules and prevent them from sliding into each other.

Abstract: A DIMM connector having reduced crosstalk includes ceramic particles having a high dielectric constant and/or composite fibers mixed into materials used for fabricating a connector housing of the DIMM connector.

Abstract: A DIMM connector having reduced crosstalk includes ceramic particles having a high dielectric constant and/or composite fibers mixed into materials used for fabricating a connector housing of the DIMM connector.

Abstract: A DIMM connector having reduced crosstalk includes ceramic particles having a high dielectric constant and/or composite fibers mixed into materials used for fabricating a connector housing of the DIMM connector.

Abstract: A depolymerization cleaning solution, and method of using such solution, for removing undesirable thermoset polymer sealants residing on electronic components to provide such components with a clean seal surface for a subsequent rework process. The depolymerization cleaning solution includes a premixed metal hydroxide or amino onium salt saturated solution having a surfactant. It is particularly useful for the localized deposition and removal of thermoset polymer sealants, such as polysiloxanes, within sealband areas of the components, which have been applied on such components with different levels of chemical inertness. The material set and method disclosed in the present invention are the basis for a low cost electronic package adhesive rework process.

Abstract: The present invention provides chip containing electronic devices such as Multichip Ceramic Modules (MCM's) containing a plurality of chips on a substrate which chips are underfilled with a reworkable composition which allows one or more chips to be removed from the device and replaced. The reworkable compositions contain a base resin which is not cross-linkable and which forms a matrix with a linear curable component or preferably a combination of linear curable components which curable components are cross-linkable and when cured form a cross-linked domain in the base resin matrix. A suitable cross-linking catalyst such as Pt is used and optionally a filler preferably silane surface treated silica. The preferred base resin is linear polydimethylsiloxane and the preferred curable components are vinyl terminated linear poly dimethyl siloxane and hydrogen terminated linear poly dimethyl siloxane.