Abstract: Fabricating a semiconductor substrate by (a) vertical etching a feature having sidewalls and a depth into one or more layers formed on the semiconductor substrate and (b) depositing an amorphous carbon liner onto the sidewalls of the feature. Steps (a) and optionally (b) are iterated until the vertical etch feature has reached a desired depth. With each iteration of (a), the feature is vertical etched deeper into the one or more layers, while the amorphous carbon liner resists lateral etching of the sidewalls of the feature. With each optional iteration of (b), the deposited amorphous carbon liner on the sidewalls of the feature is replenished.

Abstract: In one embodiment, a method for preventing flaring at a facility, by a system, includes receiving a plurality of pressure measurements from a sensor disposed downstream of the facility. The method further includes comparing the plurality of pressure measurements to a threshold pressure, wherein the threshold pressure corresponds to mitigating a flaring event. In response to determining that at least one of the plurality of pressure measurements is greater than the threshold pressure, the method further includes analyzing injection response curves for a plurality of wells to determine a first well for adjusting a back pressure on a reservoir intersected by the first well. The method further includes transmitting an instruction to the first well to adjust the back pressure on the reservoir.

Abstract: Fabricating a semiconductor substrate by (a) vertical etching a feature having sidewalls and a depth into one or more layers formed on the semiconductor substrate and (b) depositing an amorphous carbon liner onto the sidewalls of the feature. Steps (a) and optionally (b) are iterated until the vertical etch feature has reached a desired depth. With each iteration of (a), the feature is vertical etched deeper into the one or more layers, while the amorphous carbon liner resists lateral etching of the sidewalls of the feature. With each optional iteration of (b), the deposited amorphous carbon liner on the sidewalls of the feature is replenished.

Abstract: This disclosure relates generally to a patterning structure (and methods and apparatus for forming such structures) including substrate having a partially fabricated semiconductor device film stack, a radiation-sensitive imaging layer over the substrate, an underlayer below the radiation-sensitive imaging layer, the underlayer including a labile species, a hardmask positioned below the underlayer, and a diffusion barrier layer positioned between the underlayer and the hardmask layer, the diffusion barrier layer including a diffusion barrier material that reduces diffusion of the labile species from the underlayer into the hardmask layer. In various embodiments, the reduction of diffusion of the labile species downwards from the underlayer into the hardmask results in relatively greater diffusion of the labile species upwards from the underlayer into the radiation-sensitive imaging layer.

Abstract: Methods for forming patterned multi-layer stacks including a metal-containing layer are provided herein. Methods involve using silicon-containing non-metal materials in a multi-layer stack including one sacrificial layer to be later removed and replaced with metal while maintaining etch contrast to pattern the multi-layer stack and selectively remove the sacrificial layer prior to depositing metal. Methods involve using silicon oxycarbide in lieu of silicon nitride, and a sacrificial non-metal material in lieu of a metal-containing layer, to fabricate the multi-layer stack, pattern the multi-layer stack, selectively remove the sacrificial non-metal material to leave spaces in the stack, and deposit metal-containing material into the spaces. Sacrificial non-metal materials include silicon nitride and doped polysilicon, such as boron-doped silicon.

Abstract: An anti-inhibin antibody and its applications are provided. The antibody can have the inhibitory effect of inhibins on the secretion of endogenous follicle-stimulating hormone (FSH), promote the secretion of endogenous FSH and promote the development of animal follicles. The antibody can replace the use of FSH or pregnant mare serum Gonadotropin (PMSG) in animal reproduction, and can be used for promoting animal reproduction, estrus synchronization, conception and birth, embryo transferring, improving ovulation quality, promoting livestock reproduction, and inducing estrus in female livestock.

Abstract: Methods for forming patterned multi-layer stacks including a metal-containing layer are provided herein. Methods involve using silicon-containing non-metal materials in a multi-layer stack including one sacrificial layer to be later removed and replaced with metal while maintaining etch contrast to pattern the multi-layer stack and selectively remove the sacrificial layer prior to depositing metal. Methods involve using silicon oxycarbide in lieu of silicon nitride, and a sacrificial non-metal material in lieu of a metal-containing layer, to fabricate the multi-layer stack, pattern the multi-layer stack, selectively remove the sacrificial non-metal material to leave spaces in the stack, and deposit metal-containing material into the spaces. Sacrificial non-metal materials include silicon nitride and doped polysilicon, such as boron-doped silicon.

Abstract: In one embodiment, a method for preventing flaring at a facility, by a system, includes receiving a plurality of pressure measurements from a sensor disposed downstream of the facility. The method further includes comparing the plurality of pressure measurements to a threshold pressure, wherein the threshold pressure corresponds to mitigating a flaring event. In response to determining that at least one of the plurality of pressure measurements is greater than the threshold pressure, the method further includes analyzing injection response curves for a plurality of wells to determine a first well for adjusting a back pressure on a reservoir intersected by the first well. The method further includes transmitting an instruction to the first well to adjust the back pressure on the reservoir.

Abstract: In some examples, a rib cover is provided for a multi-station processing module having a rib disposed between adjacent processing chambers. An example rib cover comprises a first portion for supporting the rib cover on the rib, a first side shield to cover a first wall of the rib when the rib cover is fitted thereto, and at least one spacer to hold an inner surface of the rib cover away from the covered rib.

Abstract: Provided are an emoticon package generation method and apparatus, a device and a medium which relate to the field of graphic processing and in particular to Internet technologies. The specific implementation solution is: determining at least one of associated text of an emoticon picture or a similar emoticon package of an emoticon picture, where the associated text of the emoticon picture includes at least one of main part information, scenario information, emotion information, action information or connotation information; determining target matching text from the at least one of the associated text of the emoticon picture or associated text of the similar emoticon package; and superimposing the target matching text on the emoticon picture to generate a new emoticon package.

Abstract: Fabricating a semiconductor substrate by (a) vertical etching a feature having sidewalls and a depth into one or more layers formed on the semiconductor substrate and (b) depositing an amorphous carbon liner onto the sidewalls of the feature. Steps (a) and optionally (b) are iterated until the vertical etch feature has reached a desired depth. With each iteration of (a), the feature is vertical etched deeper into the one or more layers, while the amorphous carbon liner resists lateral etching of the sidewalls of the feature. With each optional iteration of (b), the deposited amorphous carbon liner on the sidewalls of the feature is replenished.

Abstract: Provided are an emoticon package generation method and apparatus, a device and a medium which relate to the field of graphic processing and in particular to Internet technologies. The specific implementation solution is: determining at least one of associated text of an emoticon picture or a similar emoticon package of an emoticon picture, where the associated text of the emoticon picture includes at least one of main part information, scenario information, emotion information, action information or connotation information; determining target matching text from the at least one of the associated text of the emoticon picture or associated text of the similar emoticon package; and superimposing the target matching text on the emoticon picture to generate a new emoticon package.

Abstract: Methods for forming patterned multi-layer stacks including a metal-containing layer are provided herein. Methods involve using silicon-containing non-metal materials in a multi-layer stack including one sacrificial layer to be later removed and replaced with metal while maintaining etch contrast to pattern the multi-layer stack and selectively remove the sacrificial layer prior to depositing metal. Methods involve using silicon oxycarbide in lieu of silicon nitride, and a sacrificial non-metal material in lieu of a metal-containing layer, to fabricate the multi-layer stack, pattern the multi-layer stack, selectively remove the sacrificial non-metal material to leave spaces in the stack, and deposit metal-containing material into the spaces. Sacrificial non-metal materials include silicon nitride and doped polysilicon, such as boron-doped silicon.

Abstract: Methods of etching cobalt on substrates are provided. Some methods involve exposing the substrate to a boron-containing halide gas and an additive, and exposing the substrate to an activation gas and a plasma. Additives improve selectively depositing a thicker layer of a boron-containing halide material on a surface of a mask than on a surface of a metal. Additives include H2, CH4, CF4, NF3, and Cl2. Boron-containing halide gases include BCl3, BBr3, BF3, and BI3. Exposures may be performed in two or more cycles, with variations in durations and/or bias power for each exposure in the two or more cycles.

Abstract: Methods of etching cobalt on substrates are provided. Some methods involve exposing the substrate to a boron-containing halide gas and an additive, and exposing the substrate to an activation gas and a plasma. Additives improve selectively depositing a thicker layer of a boron-containing halide material on a surface of a mask than on a surface of a metal. Additives include H2, CH4, CF4, NF3, and Cl2. Boron-containing halide gases include BCl3, BBr3, BF3, and Bl3. Exposures may be performed in two or more cycles, with variations in durations and/or bias power for each exposure in the two or more cycles.

Abstract: Methods of etching cobalt on substrates are provided. Some methods involve exposing the substrate to a boron-containing halide gas and an additive, and exposing the substrate to an activation gas and a plasma. Additives improve selectively depositing a thicker layer of a boron-containing halide material on a surface of a mask than on a surface of a metal. Additives include H2, CH4, CF4, NF3, and Cl2. Boron-containing halide gases include BCl3, BBr3, BF3, and BI3. Exposures may be performed in two or more cycles, with variations in durations and/or bias power for each exposure in the two or more cycles.

Abstract: Methods of etching cobalt on substrates are provided. Some methods involve exposing the substrate to a boron-containing halide gas and an additive, and exposing the substrate to an activation gas and a plasma. Additives improve selectively depositing a thicker layer of a boron-containing halide material on a surface of a mask than on a surface of a metal. Additives include H2, CH4, CF4, NF3, and Cl2. Boron-containing halide gases include BCl3, BBr3, BF3, and BI3. Exposures may be performed in two or more cycles, with variations in durations and/or bias power for each exposure in the two or more cycles.

Abstract: An optical node and method for operation in an ultra long haul backbone network that provides DWDM optical transmission and wavelength networking functionalities are disclosed. The optical node is designed with capabilities for amplification, dispersion compensation, and add/drop functionalities. In one embodiment, three erbium-doped fiber amplifier (EDFA) are cascaded using low nonlinearity and low loss dispersion compensating module (DCM).

Abstract: The present invention provides a dispersion compensator which utilizes a Virtually Imaged Phased Array (VIPA), gratings, and birefringent wedges to moderate chromatic dispersion, dispersion slope and polarization mode dispersion, and a method and system for testing such a dispersion compensator.

Abstract: The present invention provides an improved tunable chromatic dispersion compensator. The compensator includes: a virtually imaged phased array (VIPA); at least one reflector optically coupled to the VIPA; a mirror optically coupled to the at least one reflector; and a movable reflector holder coupled to the at least one reflector, where the movable reflector holder moves the at least one reflector such that a length of a beam path between the VIPA and the at least one reflector and the mirror is variable. The present invention uses the VIPA to produce a controlled variable degree of chromatic dispersion within a plurality of optical channels so as to compensate for unwanted chromatic dispersion in an optical communications system. Positional adjustment of the movable reflector holder permits variable control of the beam path length between the VIPA and the focusing lens.