Patents by Inventor Jialing Yang

Jialing Yang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20250191926
    Abstract: Fabricating a semiconductor substrate by (a) vertical etching a feature having sidewalls and a depth into one or more layers formed on the semiconductor substrate and (b) depositing an amorphous carbon liner onto the sidewalls of the feature. Steps (a) and optionally (b) are iterated until the vertical etch feature has reached a desired depth. With each iteration of (a), the feature is vertical etched deeper into the one or more layers, while the amorphous carbon liner resists lateral etching of the sidewalls of the feature. With each optional iteration of (b), the deposited amorphous carbon liner on the sidewalls of the feature is replenished.
    Type: Application
    Filed: February 19, 2025
    Publication date: June 12, 2025
    Inventors: Jon HENRI, Karthik S. COLINJIVADI, Francis Sloan ROBERTS, Kapu Sirish REDDY, Samantha SiamHwa TAN, Shih-Ked LEE, Eric HUDSON, Todd SHROEDER, Jialing YANG, Huifeng ZHENG
  • Patent number: 12247462
    Abstract: In one embodiment, a method for preventing flaring at a facility, by a system, includes receiving a plurality of pressure measurements from a sensor disposed downstream of the facility. The method further includes comparing the plurality of pressure measurements to a threshold pressure, wherein the threshold pressure corresponds to mitigating a flaring event. In response to determining that at least one of the plurality of pressure measurements is greater than the threshold pressure, the method further includes analyzing injection response curves for a plurality of wells to determine a first well for adjusting a back pressure on a reservoir intersected by the first well. The method further includes transmitting an instruction to the first well to adjust the back pressure on the reservoir.
    Type: Grant
    Filed: November 22, 2023
    Date of Patent: March 11, 2025
    Assignee: EOG Resources, Inc.
    Inventors: Pratik Kharel, Mark Xavier Metzger, Michael Jiale Yang, Andrew Michael Mealey, Liz Mydung Thai
  • Patent number: 12249514
    Abstract: Fabricating a semiconductor substrate by (a) vertical etching a feature having sidewalls and a depth into one or more layers formed on the semiconductor substrate and (b) depositing an amorphous carbon liner onto the sidewalls of the feature. Steps (a) and optionally (b) are iterated until the vertical etch feature has reached a desired depth. With each iteration of (a), the feature is vertical etched deeper into the one or more layers, while the amorphous carbon liner resists lateral etching of the sidewalls of the feature. With each optional iteration of (b), the deposited amorphous carbon liner on the sidewalls of the feature is replenished.
    Type: Grant
    Filed: March 16, 2020
    Date of Patent: March 11, 2025
    Assignee: Lam Research Corporation
    Inventors: Jon Henri, Karthik S. Colinjivadi, Francis Sloan Roberts, Kapu Sirish Reddy, Samantha Siamhwa Tan, Shih-Ked Lee, Eric Hudson, Todd Shroeder, Jialing Yang, Huifeng Zheng
  • Publication number: 20250068065
    Abstract: This disclosure relates generally to a patterning structure (and methods and apparatus for forming such structures) including substrate having a partially fabricated semiconductor device film stack, a radiation-sensitive imaging layer over the substrate, an underlayer below the radiation-sensitive imaging layer, the underlayer including a labile species, a hardmask positioned below the underlayer, and a diffusion barrier layer positioned between the underlayer and the hardmask layer, the diffusion barrier layer including a diffusion barrier material that reduces diffusion of the labile species from the underlayer into the hardmask layer. In various embodiments, the reduction of diffusion of the labile species downwards from the underlayer into the hardmask results in relatively greater diffusion of the labile species upwards from the underlayer into the radiation-sensitive imaging layer.
    Type: Application
    Filed: January 9, 2023
    Publication date: February 27, 2025
    Inventors: Sivananda Krishnan Kanakasabapathy, Kevin M. McLaughlin, Jialing Yang, Arpan Pravin Mahorowala, Durgalakshmi Singhal
  • Publication number: 20240387258
    Abstract: Methods for forming patterned multi-layer stacks including a metal-containing layer are provided herein. Methods involve using silicon-containing non-metal materials in a multi-layer stack including one sacrificial layer to be later removed and replaced with metal while maintaining etch contrast to pattern the multi-layer stack and selectively remove the sacrificial layer prior to depositing metal. Methods involve using silicon oxycarbide in lieu of silicon nitride, and a sacrificial non-metal material in lieu of a metal-containing layer, to fabricate the multi-layer stack, pattern the multi-layer stack, selectively remove the sacrificial non-metal material to leave spaces in the stack, and deposit metal-containing material into the spaces. Sacrificial non-metal materials include silicon nitride and doped polysilicon, such as boron-doped silicon.
    Type: Application
    Filed: July 26, 2024
    Publication date: November 21, 2024
    Inventors: Hui-Jung Wu, Bart J. Van Schravendijk, Mark Naoshi Kawaguchi, Gereng Gunawan, Jay E. Uglow, Nagraj Shankar, Gowri Channa Kamarthy, Kevin M. McLaughlin, Ananda K. Banerji, Jialing Yang, John Hoang, Aaron Lynn Routzahn, Nathan Musselwhite, Meihua Shen, Thorsten Bernd Lill, Hao Chi, Nicholas Dominic Altieri
  • Publication number: 20240317845
    Abstract: An anti-inhibin antibody and its applications are provided. The antibody can have the inhibitory effect of inhibins on the secretion of endogenous follicle-stimulating hormone (FSH), promote the secretion of endogenous FSH and promote the development of animal follicles. The antibody can replace the use of FSH or pregnant mare serum Gonadotropin (PMSG) in animal reproduction, and can be used for promoting animal reproduction, estrus synchronization, conception and birth, embryo transferring, improving ovulation quality, promoting livestock reproduction, and inducing estrus in female livestock.
    Type: Application
    Filed: December 13, 2022
    Publication date: September 26, 2024
    Applicant: NINGBO SANSHENG BIOLOGICAL TECHNOLOGY CO., LTD.
    Inventors: Yong ZHANG, Xingchang ZHENG, Aike WANG, Jiamin JIN, Jiale YANG, Di SUN, Yu CHEN, Junshuai YANG, Yong CHEN, Lu CHEN, Sichao ZHOU
  • Patent number: 12080592
    Abstract: Methods for forming patterned multi-layer stacks including a metal-containing layer are provided herein. Methods involve using silicon-containing non-metal materials in a multi-layer stack including one sacrificial layer to be later removed and replaced with metal while maintaining etch contrast to pattern the multi-layer stack and selectively remove the sacrificial layer prior to depositing metal. Methods involve using silicon oxycarbide in lieu of silicon nitride, and a sacrificial non-metal material in lieu of a metal-containing layer, to fabricate the multi-layer stack, pattern the multi-layer stack, selectively remove the sacrificial non-metal material to leave spaces in the stack, and deposit metal-containing material into the spaces. Sacrificial non-metal materials include silicon nitride and doped polysilicon, such as boron-doped silicon.
    Type: Grant
    Filed: September 10, 2019
    Date of Patent: September 3, 2024
    Assignee: Lam Research Corporation
    Inventors: Hui-Jung Wu, Bart J. van Schravendijk, Mark Naoshi Kawaguchi, Gereng Gunawan, Jay E. Uglow, Nagraj Shankar, Gowri Channa Kamarthy, Kevin M. McLaughlin, Ananda K. Banerji, Jialing Yang, John Hoang, Aaron Lynn Routzahn, Nathan Musselwhite, Meihua Shen, Thorsten Bernd Lill, Hao Chi, Nicholas Dominic Altieri
  • Patent number: 11891880
    Abstract: In one embodiment, a method for preventing flaring at a facility, by a system, includes receiving a plurality of pressure measurements from a sensor disposed downstream of the facility. The method further includes comparing the plurality of pressure measurements to a threshold pressure, wherein the threshold pressure corresponds to mitigating a flaring event. In response to determining that at least one of the plurality of pressure measurements is greater than the threshold pressure, the method further includes analyzing injection response curves for a plurality of wells to determine a first well for adjusting a back pressure on a reservoir intersected by the first well. The method further includes transmitting an instruction to the first well to adjust the back pressure on the reservoir.
    Type: Grant
    Filed: June 30, 2023
    Date of Patent: February 6, 2024
    Assignee: EOG Resources, Inc.
    Inventors: Pratik Kharel, Mark Xavier Metzger, Michael Jiale Yang, Andrew Michael Mealey, Liz Mydung Thai
  • Publication number: 20230323532
    Abstract: In some examples, a rib cover is provided for a multi-station processing module having a rib disposed between adjacent processing chambers. An example rib cover comprises a first portion for supporting the rib cover on the rib, a first side shield to cover a first wall of the rib when the rib cover is fitted thereto, and at least one spacer to hold an inner surface of the rib cover away from the covered rib.
    Type: Application
    Filed: August 30, 2021
    Publication date: October 12, 2023
    Inventors: Keith Joseph Martin, Todd Schroeder, Kevin M. McLaughlin, Jiuyuan Nie, Jialing Yang, Chee Whye Woo
  • Patent number: 11521340
    Abstract: Provided are an emoticon package generation method and apparatus, a device and a medium which relate to the field of graphic processing and in particular to Internet technologies. The specific implementation solution is: determining at least one of associated text of an emoticon picture or a similar emoticon package of an emoticon picture, where the associated text of the emoticon picture includes at least one of main part information, scenario information, emotion information, action information or connotation information; determining target matching text from the at least one of the associated text of the emoticon picture or associated text of the similar emoticon package; and superimposing the target matching text on the emoticon picture to generate a new emoticon package.
    Type: Grant
    Filed: July 3, 2020
    Date of Patent: December 6, 2022
    Assignee: BEIJING BAIDU NETCOM SCIENCE AND TECHNOLOGY CO., LTD.
    Inventors: Xianglong Xu, Jianfeng Zhu, Jiahua Cui, Jing Xiang, Hongtao Li, Chen Han, Shufei Lin, Ying Su, Shicao Li, Huiqin Li, Xiaochu Gan, Fei Gao, Jiale Yang, Xueyun Ma, Guohong Li
  • Publication number: 20220199417
    Abstract: Fabricating a semiconductor substrate by (a) vertical etching a feature having sidewalls and a depth into one or more layers formed on the semiconductor substrate and (b) depositing an amorphous carbon liner onto the sidewalls of the feature. Steps (a) and optionally (b) are iterated until the vertical etch feature has reached a desired depth. With each iteration of (a), the feature is vertical etched deeper into the one or more layers, while the amorphous carbon liner resists lateral etching of the sidewalls of the feature. With each optional iteration of (b), the deposited amorphous carbon liner on the sidewalls of the feature is replenished.
    Type: Application
    Filed: March 16, 2020
    Publication date: June 23, 2022
    Inventors: Jon HENRI, Karthik S. COLINJIVADI, Francis Sloan ROBERTS, Kapu Sirish REDDY, Samantha SiamHwa TAN, Shih-Ked LEE, Eric HUDSON, Todd SHROEDER, Jialing YANG, Huifeng ZHENG
  • Publication number: 20220114776
    Abstract: Provided are an emoticon package generation method and apparatus, a device and a medium which relate to the field of graphic processing and in particular to Internet technologies. The specific implementation solution is: determining at least one of associated text of an emoticon picture or a similar emoticon package of an emoticon picture, where the associated text of the emoticon picture includes at least one of main part information, scenario information, emotion information, action information or connotation information; determining target matching text from the at least one of the associated text of the emoticon picture or associated text of the similar emoticon package; and superimposing the target matching text on the emoticon picture to generate a new emoticon package.
    Type: Application
    Filed: July 3, 2020
    Publication date: April 14, 2022
    Applicant: BEIJING BAIDU NETCOM SCIENCE AND TECHNOLOGY CO., LTD.
    Inventors: Xianglong XU, Jianfeng ZHU, Jiahua CUI, Jing XIANG, Hongtao LI, Chen HAN, Shufei LIN, Ying SU, Shicao LI, Huiqin LI, Xiaochu GAN, Fei GAO, Jiale YANG, Xueyun MA, Guohong LI
  • Publication number: 20220051938
    Abstract: Methods for forming patterned multi-layer stacks including a metal-containing layer are provided herein. Methods involve using silicon-containing non-metal materials in a multi-layer stack including one sacrificial layer to be later removed and replaced with metal while maintaining etch contrast to pattern the multi-layer stack and selectively remove the sacrificial layer prior to depositing metal. Methods involve using silicon oxycarbide in lieu of silicon nitride, and a sacrificial non-metal material in lieu of a metal-containing layer, to fabricate the multi-layer stack, pattern the multi-layer stack, selectively remove the sacrificial non-metal material to leave spaces in the stack, and deposit metal-containing material into the spaces. Sacrificial non-metal materials include silicon nitride and doped polysilicon, such as boron-doped silicon.
    Type: Application
    Filed: September 10, 2019
    Publication date: February 17, 2022
    Inventors: Hui-Jung Wu, Bart J. van Schravendijk, Mark Naoshi Kawaguchi, Gereng Gunawan, Jay E. Uglow, Nagraj Shankar, Gowri Channa Kamarthy, Kevin M. McLaughlin, Ananda K. Banerji, Jialing Yang, John Hoang, Aaron Lynn Routzahn, Nathan Musselwhite, Meihua Shen, Thorsten Bernd Lill, Hao Chi, Nicholas Dominic Altieri
  • Patent number: 10784086
    Abstract: Methods of etching cobalt on substrates are provided. Some methods involve exposing the substrate to a boron-containing halide gas and an additive, and exposing the substrate to an activation gas and a plasma. Additives improve selectively depositing a thicker layer of a boron-containing halide material on a surface of a mask than on a surface of a metal. Additives include H2, CH4, CF4, NF3, and Cl2. Boron-containing halide gases include BCl3, BBr3, BF3, and BI3. Exposures may be performed in two or more cycles, with variations in durations and/or bias power for each exposure in the two or more cycles.
    Type: Grant
    Filed: November 28, 2017
    Date of Patent: September 22, 2020
    Assignee: LAM RESEARCH CORPORATION
    Inventors: Jialing Yang, Baosuo Zhou, Meihua Shen, Thorsten Lill, John Hoang
  • Publication number: 20180102236
    Abstract: Methods of etching cobalt on substrates are provided. Some methods involve exposing the substrate to a boron-containing halide gas and an additive, and exposing the substrate to an activation gas and a plasma. Additives improve selectively depositing a thicker layer of a boron-containing halide material on a surface of a mask than on a surface of a metal. Additives include H2, CH4, CF4, NF3, and Cl2. Boron-containing halide gases include BCl3, BBr3, BF3, and Bl3. Exposures may be performed in two or more cycles, with variations in durations and/or bias power for each exposure in the two or more cycles.
    Type: Application
    Filed: November 28, 2017
    Publication date: April 12, 2018
    Applicant: Lam Research Corporation
    Inventors: Jialing Yang, Baosuo Zhou, Meihua Shen, Thorsten Lill, John Hoang
  • Patent number: 9870899
    Abstract: Methods of etching cobalt on substrates are provided. Some methods involve exposing the substrate to a boron-containing halide gas and an additive, and exposing the substrate to an activation gas and a plasma. Additives improve selectively depositing a thicker layer of a boron-containing halide material on a surface of a mask than on a surface of a metal. Additives include H2, CH4, CF4, NF3, and Cl2. Boron-containing halide gases include BCl3, BBr3, BF3, and BI3. Exposures may be performed in two or more cycles, with variations in durations and/or bias power for each exposure in the two or more cycles.
    Type: Grant
    Filed: June 24, 2015
    Date of Patent: January 16, 2018
    Assignee: LAM RESEARCH CORPORATION
    Inventors: Jialing Yang, Baosuo Zhou, Meihua Shen, Thorsten Lill, John Hoang
  • Publication number: 20160314985
    Abstract: Methods of etching cobalt on substrates are provided. Some methods involve exposing the substrate to a boron-containing halide gas and an additive, and exposing the substrate to an activation gas and a plasma. Additives improve selectively depositing a thicker layer of a boron-containing halide material on a surface of a mask than on a surface of a metal. Additives include H2, CH4, CF4, NF3, and Cl2. Boron-containing halide gases include BCl3, BBr3, BF3, and BI3. Exposures may be performed in two or more cycles, with variations in durations and/or bias power for each exposure in the two or more cycles.
    Type: Application
    Filed: June 24, 2015
    Publication date: October 27, 2016
    Inventors: Jialing Yang, Baosuo Zhou, Meihua Shen, Thorsten Lill, John Hoang
  • Patent number: 6621625
    Abstract: An optical node and method for operation in an ultra long haul backbone network that provides DWDM optical transmission and wavelength networking functionalities are disclosed. The optical node is designed with capabilities for amplification, dispersion compensation, and add/drop functionalities. In one embodiment, three erbium-doped fiber amplifier (EDFA) are cascaded using low nonlinearity and low loss dispersion compensating module (DCM).
    Type: Grant
    Filed: December 13, 2000
    Date of Patent: September 16, 2003
    Assignee: Avanex Corporation
    Inventors: Lintao Zhang, Guohua Xiao, Charles Mao, Xiofan Cao, Jialing Yang, Jin Xie, Gang Li
  • Patent number: 6441959
    Abstract: The present invention provides a dispersion compensator which utilizes a Virtually Imaged Phased Array (VIPA), gratings, and birefringent wedges to moderate chromatic dispersion, dispersion slope and polarization mode dispersion, and a method and system for testing such a dispersion compensator.
    Type: Grant
    Filed: October 11, 2000
    Date of Patent: August 27, 2002
    Assignee: Avanex Corporation
    Inventors: Jialing Yang, Simon Cao, Jiyong Ma, Christopher Lin
  • Patent number: 6392807
    Abstract: The present invention provides an improved tunable chromatic dispersion compensator. The compensator includes: a virtually imaged phased array (VIPA); at least one reflector optically coupled to the VIPA; a mirror optically coupled to the at least one reflector; and a movable reflector holder coupled to the at least one reflector, where the movable reflector holder moves the at least one reflector such that a length of a beam path between the VIPA and the at least one reflector and the mirror is variable. The present invention uses the VIPA to produce a controlled variable degree of chromatic dispersion within a plurality of optical channels so as to compensate for unwanted chromatic dispersion in an optical communications system. Positional adjustment of the movable reflector holder permits variable control of the beam path length between the VIPA and the focusing lens.
    Type: Grant
    Filed: December 22, 2000
    Date of Patent: May 21, 2002
    Assignee: Avanex Corporation
    Inventors: Giovanni Barbarossa, Jialing Yang