Abstract: The present invention relates to a compound of formula (I) capable of inhibiting plasmin activity and having blood coagulation and hemostasis activity, and a pharmaceutically acceptable salt, hydrate, isomer, prodrug and mixture thereof, wherein R1 to R3 are as defined in the description.

Abstract: This disclosure provides systems, methods, apparatus, and computer programs encoded on computer storage media, for relative timing drift correction for distributed multi-user transmissions. In one aspect, a first access point (AP) may receive a first signal from a second AP. The first signal may be associated with a channel sounding procedure to be performed substantially simultaneously by the second AP and the first AP. The first AP may then receive a second signal from the second AP, and prior to a substantially simultaneous transmission by the second AP and the first AP. The second signal may include timing information relative to the first signal. The first AP may determine a start time of the substantially simultaneous transmission at the first AP based on the timing information, and may initiate the substantially simultaneous transmission according to the determined start time.

Abstract: This disclosure provides systems, devices, apparatus, and methods, including computer programs encoded on storage media, for techniques for reducing feedback information in an extremely high throughput (EHT) wireless local area network (WLAN). A receiving device (beamformee), such as a station (STA), may receive a sounding signal from a transmitting device (beamformer), such as an access point (AP), and transmit channel feedback. The receiving device may transmit the channel feedback as part of a reduced compressed beamforming feedback (CBF) operation that includes determining a first set of channel characteristics. The receiving device may select a subset of the first set of channel characteristics and determine a set of differential characteristics based on the subset. The transmitting device may then transmit the sets of characteristics as reduced CBF to the transmitting device. The transmitting device may determine a channel estimation for beamformed signaling based on the reduced CBF.

Abstract: This disclosure provides methods, devices and systems for link adaptation in wireless communications. Some implementations more specifically relate to transmitter-based modulation and coding scheme (MCS) selection. A transmitting device transmits a test packet, over a wireless channel, to a receiving device. The receiving device generates one or more signal-to-interference-plus-noise ratio (SINR) estimates for the wireless channel based on the received sounding packet. In some aspects, each SINR estimate may be associated with a particular modulation order. In some other aspects, each SINR estimate may be generated based on a transmitter configuration or a receiver type to be used for subsequent communications between the transmitting device and the receiving device. The receiving device transmits feedback, including the SINR estimates, to the transmitting device.

Abstract: This disclosure provides methods, devices and systems for encoding data for wireless communication to achieve a desired amplitude distribution. Some implementations more specifically relate to performing an encoding operation to shape the amplitudes of the resultant symbols such that the amplitudes have a non-uniform distribution. In some implementations of the non-uniform distribution, the probabilities associated with the respective amplitudes generally increase with decreasing amplitude. Some implementations enable the tracking of MPDU boundaries to facilitate successful decoding by a receiving device. Additionally or alternatively, some implementations enable the determination of a packet length after performing the amplitude shaping, which enables a transmitting device to determine the number of padding bits to add to the payload and to signal the packet length to a receiving device so that the receiving device may determine the duration of the packet.

Abstract: In some examples, a rib cover is provided for a multi-station processing module having a rib disposed between adjacent processing chambers. An example rib cover comprises a first portion for supporting the rib cover on the rib, a first side shield to cover a first wall of the rib when the rib cover is fitted thereto, and at least one spacer to hold an inner surface of the rib cover away from the covered rib.

Abstract: Fabricating a semiconductor substrate by (a) vertical etching a feature having sidewalls and a depth into one or more layers formed on the semiconductor substrate and (b) depositing an amorphous carbon liner onto the sidewalls of the feature. Steps (a) and optionally (b) are iterated until the vertical etch feature has reached a desired depth. With each iteration of (a), the feature is vertical etched deeper into the one or more layers, while the amorphous carbon liner resists lateral etching of the sidewalls of the feature. With each optional iteration of (b), the deposited amorphous carbon liner on the sidewalls of the feature is replenished.

Abstract: Methods for forming patterned multi-layer stacks including a metal-containing layer are provided herein. Methods involve using silicon-containing non-metal materials in a multi-layer stack including one sacrificial layer to be later removed and replaced with metal while maintaining etch contrast to pattern the multi-layer stack and selectively remove the sacrificial layer prior to depositing metal. Methods involve using silicon oxycarbide in lieu of silicon nitride, and a sacrificial non-metal material in lieu of a metal-containing layer, to fabricate the multi-layer stack, pattern the multi-layer stack, selectively remove the sacrificial non-metal material to leave spaces in the stack, and deposit metal-containing material into the spaces. Sacrificial non-metal materials include silicon nitride and doped polysilicon, such as boron-doped silicon.

Abstract: Methods of etching cobalt on substrates are provided. Some methods involve exposing the substrate to a boron-containing halide gas and an additive, and exposing the substrate to an activation gas and a plasma. Additives improve selectively depositing a thicker layer of a boron-containing halide material on a surface of a mask than on a surface of a metal. Additives include H2, CH4, CF4, NF3, and Cl2. Boron-containing halide gases include BCl3, BBr3, BF3, and BI3. Exposures may be performed in two or more cycles, with variations in durations and/or bias power for each exposure in the two or more cycles.

Abstract: Methods of etching cobalt on substrates are provided. Some methods involve exposing the substrate to a boron-containing halide gas and an additive, and exposing the substrate to an activation gas and a plasma. Additives improve selectively depositing a thicker layer of a boron-containing halide material on a surface of a mask than on a surface of a metal. Additives include H2, CH4, CF4, NF3, and Cl2. Boron-containing halide gases include BCl3, BBr3, BF3, and Bl3. Exposures may be performed in two or more cycles, with variations in durations and/or bias power for each exposure in the two or more cycles.

Abstract: Methods of etching cobalt on substrates are provided. Some methods involve exposing the substrate to a boron-containing halide gas and an additive, and exposing the substrate to an activation gas and a plasma. Additives improve selectively depositing a thicker layer of a boron-containing halide material on a surface of a mask than on a surface of a metal. Additives include H2, CH4, CF4, NF3, and Cl2. Boron-containing halide gases include BCl3, BBr3, BF3, and BI3. Exposures may be performed in two or more cycles, with variations in durations and/or bias power for each exposure in the two or more cycles.

Abstract: Methods of etching cobalt on substrates are provided. Some methods involve exposing the substrate to a boron-containing halide gas and an additive, and exposing the substrate to an activation gas and a plasma. Additives improve selectively depositing a thicker layer of a boron-containing halide material on a surface of a mask than on a surface of a metal. Additives include H2, CH4, CF4, NF3, and Cl2. Boron-containing halide gases include BCl3, BBr3, BF3, and BI3. Exposures may be performed in two or more cycles, with variations in durations and/or bias power for each exposure in the two or more cycles.

Abstract: An optical node and method for operation in an ultra long haul backbone network that provides DWDM optical transmission and wavelength networking functionalities are disclosed. The optical node is designed with capabilities for amplification, dispersion compensation, and add/drop functionalities. In one embodiment, three erbium-doped fiber amplifier (EDFA) are cascaded using low nonlinearity and low loss dispersion compensating module (DCM).

Abstract: The present invention provides a dispersion compensator which utilizes a Virtually Imaged Phased Array (VIPA), gratings, and birefringent wedges to moderate chromatic dispersion, dispersion slope and polarization mode dispersion, and a method and system for testing such a dispersion compensator.

Abstract: The present invention provides an improved tunable chromatic dispersion compensator. The compensator includes: a virtually imaged phased array (VIPA); at least one reflector optically coupled to the VIPA; a mirror optically coupled to the at least one reflector; and a movable reflector holder coupled to the at least one reflector, where the movable reflector holder moves the at least one reflector such that a length of a beam path between the VIPA and the at least one reflector and the mirror is variable. The present invention uses the VIPA to produce a controlled variable degree of chromatic dispersion within a plurality of optical channels so as to compensate for unwanted chromatic dispersion in an optical communications system. Positional adjustment of the movable reflector holder permits variable control of the beam path length between the VIPA and the focusing lens.