Abstract: The present invention discloses a photodynamic inactivation method of Salmonella. The method using riboflavin as a photosensitizer adopts a blue light source to photodynamically inactivating Salmonella, which belongs to the technical field of sterilization for inactivating food-borne pathogenic Salmonella. The photosensitizer used in the present invention is one of essential vitamins of the human body. The riboflavin (a food-grade photosensitizer) is safe and non-toxic, and has a significant effect for inactivation of Salmonella. Moreover, the present invention is capable of controlling the risk of salmonellosis, short in treatment time, simple in operation, and capable of thoroughly inactivating Salmonella, and has certain control and prevention effects. The present invention provides a method for effective inactivation of Salmonella in food, which is low in cost, simple in operation and wide in application and can better promote the development of the food sterilization technology.

Abstract: The present invention relates to the technical field of chiral synthesis, and specifically provides a new type of oxa-spirodiphosphine ligands. The bisphosphine ligand is prepared with oxa-spirobisphenol as a starting material after triflation, palladium catalyzed coupling with diaryl phosphine oxide, reduction of trichlorosilane, further palladium catalyzed coupling with diaryl phosphine oxide, and further reduction of trichlorosilane. The oxa-spiro compound has central chirality, and thus includes L-oxa-spirodiphosphine ligand and R-oxa-spirodiphosphine ligand. The racemic spirodiphosphine ligand is capable of being synthesized from racemic oxa-spirobisphenol as a raw material. The present invention can be used as a chiral ligand in the asymmetric hydrogenation of unsaturated carboxylic adds. The complex of the ligand with ruthenium can achieve an enantioselectivity of greater than 99% in the asymmetric hydrogenation of methyl-cinnamic acid.

Abstract: A close-coupling shared storage architecture of double-wing expandable multiprocessor is provided in the close-coupling shared storage architecture with p processors scale, the close-coupling shared storage architecture of double-wing expandable multiprocessor comprises: j processor modules PMs; wherein, each processor module is formed by coupling and cross-jointing i processors Cs, and each processor is directly connected with a node controller NC through only one link; each processor module PM comprises 2 pairing node controllers NCs, and each node controller NC is connected with the processors through m links and is connected with an interconnect network through n links; the interconnect network comprises two groups, and each group comprises k cross switch route chips NRs, each of which has q ports. By adopting the connection method above, the close-coupling shared storage architecture of double-wing expandable multiprocessor is formed.

Abstract: A close-coupling shared storage architecture of double-wing expandable multiprocessor is provided in the close-coupling shared storage architecture with p processors scale, the close-coupling shared storage architecture of double-wing expandable multiprocessor comprises: j processor modules PMs; wherein, each processor module is formed by coupling and cross-jointing i processors Cs, and each processor is directly connected with a node controller NC through only one link; each processor module PM comprises 2 pairing node controllers NCs, and each node controller NC is connected with the processors through m links and is connected with an interconnect network through n links; the interconnect network comprises two groups, and each group comprises k cross switch route chips NRs, each of which has q ports. By adopting the connection method above, the close-coupling shared storage architecture of double-wing expandable multiprocessor is formed.

Abstract: A method of detecting endpoint of a plasma etching system that measures the DC voltage drop across both the sheath and the film being etched. When the film is nearly removed, a drop in voltage indicates thinning of the film which detects endpoint for etching before optical emission techniques. The voltage drop is measured across resistors within the matching network.

Abstract: A method of detecting endpoint of a plasma etching system that measures the DC voltage drop across both the sheath and the film being etched. When the film is nearly removed, a drop in voltage indicates thinning of the film which detects endpoint for etching before optical emission techniques. The voltage drop is measured across resistors within the matching network.

Abstract: A method of detecting endpoint of a plasma etching system that measures the DC voltage drop across both the sheath and the film being etched. When the film is nearly removed, a drop in voltage indicates thinning of the film which detects endpoint for etching before optical emission techniques. The voltage drop is measured across resistors within the matching network.