Patents by Inventor Jiaming Xing

Jiaming Xing has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10147754
    Abstract: An image sensor includes a semiconductor material having a front side and a back side opposite the front side. The image sensor also includes a shallow trench isolation (STI) structure, an interlayer dielectric, an intermetal dielectric, and a contact area. The STI structure extends from the front side of the semiconductor material into the semiconductor material. The interlayer dielectric is disposed between the front side of the semiconductor material and the intermetal dielectric. The contact area is disposed proximate to a lateral edge of the semiconductor material. The contact area includes a metal interconnect disposed within the intermetal dielectric and a plurality of contact plugs at least partially disposed within the interlayer dielectric. The contact area also includes a contact pad. The plurality of contact plugs is coupled between the contact pad and the metal interconnect.
    Type: Grant
    Filed: February 22, 2017
    Date of Patent: December 4, 2018
    Assignee: OmniVision Technologies, Inc.
    Inventors: Dyson H. Tai, Cunyu Yang, Gang Chen, Jing Ye, Xi-Feng Gao, Jiaming Xing
  • Publication number: 20180240833
    Abstract: An image sensor includes a semiconductor material having a front side and a back side opposite the front side. The image sensor also includes a shallow trench isolation (STI) structure, an interlayer dielectric, an intermetal dielectric, and a contact area. The STI structure extends from the front side of the semiconductor material into the semiconductor material. The interlayer dielectric is disposed between the front side of the semiconductor material and the intermetal dielectric. The contact area is disposed proximate to a lateral edge of the semiconductor material. The contact area includes a metal interconnect disposed within the intermetal dielectric and a plurality of contact plugs at least partially disposed within the interlayer dielectric. The contact area also includes a contact pad. The plurality of contact plugs is coupled between the contact pad and the metal interconnect.
    Type: Application
    Filed: February 22, 2017
    Publication date: August 23, 2018
    Inventors: Dyson H. Tai, Cunyu Yang, Gang Chen, Jing Ye, Xi-Feng Gao, Jiaming Xing
  • Publication number: 20150349017
    Abstract: A method of fabricating a semiconductor structure is disclosed, in which a pad above a connecting section and metal structures above a functional section are formed from the same metal layer. This design enables the simultaneous formation of the pad and the metal structures by forming a single metal layer and performing thereon a selective etching process, thereby leading to the advantages of process simplification, throughput improvement and cost reduction.
    Type: Application
    Filed: September 18, 2014
    Publication date: December 3, 2015
    Inventors: Jiaming Xing, Jing Ye, Xifeng Gao, Zhetian Shi
  • Patent number: 9202841
    Abstract: A method of fabricating a semiconductor structure is disclosed, in which a pad above a connecting section and metal structures above a functional section are formed from the same metal layer. This design enables the simultaneous formation of the pad and the metal structures by forming a single metal layer and performing thereon a selective etching process, thereby leading to the advantages of process simplification, throughput improvement and cost reduction.
    Type: Grant
    Filed: September 18, 2014
    Date of Patent: December 1, 2015
    Assignee: OMNIVISION TECHNOLOGIES (SHANGHAI) CO., LTD.
    Inventors: Jiaming Xing, Jing Ye, Xifeng Gao, Zhetian Shi