Patents by Inventor Jiamu XIAO

Jiamu XIAO has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • High voltage ESD protection device
    Patent number: 10910362
    Abstract: The present invention provides a high voltage ESD protection device including a P-type substrate; a first NWELL region located on the left of the upper part of the P-type substrate; an NP contact region located on the upper part of the first NWELL region; an N+ contact region located on the right of the upper part of the P-type substrate apart from the first NWELL region; a P+ contact region tangential to the right side of the N+ contact region; a NTOP layer arranged on the right of the NP contact region inside the first NWELL region. The NP contact region is connected to a metal piece to form a metal anode. The N+ contact region and the P+ contact region are connected by a metal piece to form a metal cathode.
    Type: Grant
    Filed: June 25, 2018
    Date of Patent: February 2, 2021
    Assignee: UNIVERSITY OF ELECTRONIC SCIENCE AND TECHNOLOGY OF CHINA
    Inventors: Ming Qiao, Zhao Qi, Jiamu Xiao, Longfei Liang, Danye Liang, Bo Zhang
  • High Voltage ESD Protection Device
    Publication number: 20190304966
    Abstract: The present invention provides a high voltage ESD protection device including a P-type substrate; a first NWELL region located on the left of the upper part of the P-type substrate; an NP contact region located on the upper part of the first NWELL region; an N+ contact region located on the right of the upper part of the P-type substrate apart from the first NWELL region; a P+ contact region tangential to the right side of the N+ contact region; a NTOP layer arranged on the right of the NP contact region inside the first NWELL region. The NP contact region is connected to a metal piece to form a metal anode. The N+ contact region and the P+ contact region are connected by a metal piece to form a metal cathode.
    Type: Application
    Filed: June 25, 2018
    Publication date: October 3, 2019
    Applicant: University of Electronic Science and Technology of China
    Inventors: Ming QIAO, Zhao QI, Jiamu XIAO, Longfei LIANG, Danye LIANG, Bo ZHANG