Patents by Inventor Jian-An Ke
Jian-An Ke has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20230390131Abstract: The present invention application relates to a chair with an elastic lifting seat pan, which comprises a chair body, a transmitting component, a driving component, and a seat pan firmly connecting plane connecting seat of a pair of link plates of the transmitting component. When the user is seated on the seat pan, the torsion spring is deformed with the rotation of the spindle, accumulating elastic potential energy and damping the descent of the seat pan. When the user stands up from the seat pan, the torsion spring releases the elastic potential energy to drive the spindle reversely and help the user to stand up. The chair with an elastic lifting seat pan according to the embodiment of the present invention application can be used to help the elderly and the weak people, and also to relax in public places and leisure places to reduce fatigue.Type: ApplicationFiled: May 23, 2023Publication date: December 7, 2023Applicant: Shanghai Respecting Intelligence Technology Co., Ltd.Inventors: Xinde QU, Jun WANG, Jian KE
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Patent number: 10157960Abstract: A light-emitting device includes a substrate; a light-emitting unit formed on the substrate, comprising a first conductivity type semiconductor; a second conductivity type semiconductor; an active layer formed between the first and the second conductivity type semiconductors; and an exposed region formed in the light-emitting unit, exposing the first conductivity type semiconductor; a first electrode extending layer formed on the first conductivity type semiconductor in the exposed region; a second electrode extending layer formed on the second conductivity type semiconductor; a transparent insulator, formed on the light-emitting unit and filled in the exposed region; a first electrode formed on the transparent insulator; and a plurality of conductive channel layers formed in the transparent insulator; wherein one of the plurality of conductive channel layers connects the first electrode and one of the first and the second electrode extending layers.Type: GrantFiled: December 15, 2015Date of Patent: December 18, 2018Assignee: EPISKY CORPORATION (XIAMEM) LTDInventors: Che-Shiung Wu, Chan-Yang Lu, Jian-Ke Liu, Mei-Ying Bai, Cong-Hui Lin, Xiao-Qiang Zeng
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Patent number: 10037920Abstract: A method of forming a semiconductor device includes receiving a substrate with a gate structure and forming a spacer layer over the substrate and the gate structure. The method further includes implanting carbon into the spacer layer at an angle tilted away from a first direction perpendicular to a top surface of the substrate, which increases etch resistance of the spacer layer on sidewalls of the gate structure. The method optionally includes implanting germanium into the spacer layer at the first direction, which decreases etch resistance of the spacer layer overlaying the gate structure and the substrate. The method further includes etching the spacer layer to expose the gate structure, resulting in a first portion of the spacer layer on the sidewalls of the gate structure. Due to increased etch resistance, the first portion of the spacer layer maintains its profile and thickness in subsequent fabrication processes.Type: GrantFiled: September 26, 2016Date of Patent: July 31, 2018Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Chun Hsiung Tsai, Jian-An Ke
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Patent number: 10026169Abstract: A rapid screening device has a sensing unit, a processing unit and a carrier, the processing unit is connected to the sensing unit, the sensing unit and the processing unit are disposed on the carrier, the sensing unit captures an image of an eyeball and outputs an image signal of the eyeball, the image of the eyeball is resolved from the image signal of the eyeball, the processing unit retrieves a plurality of images from the sensing unit within a predetermined time interval and executes an algorithm to generate a calculated result by the images of the image signals of the eyeball, and the calculated result is used to diagnose or predict a disease.Type: GrantFiled: June 6, 2016Date of Patent: July 17, 2018Assignee: NEUROBEAT BIOMEDICAL TECHNOLOGY CORP., LTD.Inventors: Ching Fu Wang, Hai-Jui Chu, Chun-Chieh Lee, Chien-Hsiu Weng, Wei-Cheng Chen, Chun-Yi Huang, Chin-Hsun Huang, Chun-Chen Yang, Wai-How Chong, Jr Jian Ke
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Patent number: 9583393Abstract: Embodiments of mechanisms for epitaxially growing one or more doped silicon-containing materials to form source and drain regions of finFET devices are provided in this disclosure. The dopants in the one or more doped silicon-containing materials can be driven into the neighboring lightly-doped-drain (LDD) regions by thermal anneal to dope the regions. The epitaxially growing process uses a cyclical deposition/deposition/etch (CDDE) process. In each cycle of the CDDE process, a first and a second doped materials are formed and a following etch removes most of the second doped material. The first doped material has a higher dopant concentration than the second material and is protected from the etching process by the second doped material. The CDDE process enables forming a highly doped silicon-containing material.Type: GrantFiled: June 6, 2016Date of Patent: February 28, 2017Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Chun Hsiung Tsai, Jian-An Ke, Tsan-Yao Chen, Chin-Kun Wang
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Publication number: 20170039703Abstract: The present invention provides a rapid screening device for brain disease to diagnose a patient's disease of cranial nerves by the states of the patient's eyeball. The rapid screening device for brain disease comprises a sensing unit, a processing unit and a carrier. The sensing unit can capture an image of the patient's eyeball. The sensing unit outputs an image signal of the eyeball, wherein the image of at least one eyeball can be resolved from the image signal of the eyeball. The processing unit is connected to the sensing unit. The processing unit retrieves a plurality of images from the sensing unit within a predetermined time interval, and the processing unit executes an algorithm to generate a calculated result by the images of the image signals of the eyeball. The carrier is provided with the sensing unit and the processing unit, wherein the calculated result is used to diagnose or predict that the disease happens to the patient.Type: ApplicationFiled: June 6, 2016Publication date: February 9, 2017Inventors: Ching Fu WANG, Hai-Jui CHU, Chun-Chieh LEE, Chien-Hsiu WENG, Wei-Cheng CHEN, Chun-Yi HUANG, Chin-Hsun HUANG, Chun-Chen YANG, Wai-How CHONG, Jr Jian KE
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Publication number: 20170011968Abstract: A method of forming a semiconductor device includes receiving a substrate with a gate structure and forming a spacer layer over the substrate and the gate structure. The method further includes implanting carbon into the spacer layer at an angle tilted away from a first direction perpendicular to a top surface of the substrate, which increases etch resistance of the spacer layer on sidewalls of the gate structure. The method optionally includes implanting germanium into the spacer layer at the first direction, which decreases etch resistance of the spacer layer overlaying the gate structure and the substrate. The method further includes etching the spacer layer to expose the gate structure, resulting in a first portion of the spacer layer on the sidewalls of the gate structure. Due to increased etch resistance, the first portion of the spacer layer maintains its profile and thickness in subsequent fabrication processes.Type: ApplicationFiled: September 26, 2016Publication date: January 12, 2017Inventors: Chun Hsiung TSAI, Jian-An KE
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Publication number: 20170000993Abstract: A filter-and-medication type shower arm includes a filter portion and a medication portion. The filter portion includes: a shower arm water input port, disposed at end of the filter portion; and a filter core, disposed in the filter portion, with its one end connected to the shower arm water input port. The medication portion is connected to the filter portion, so that they are in communication with each other, including: a shower arm water output port, disposed at end of the medication portion, and is provided with a shower head connector; a chamber, connected to other end of the filter core; and a medicine storage box, disposed slidably in the chamber of the medication portion, and containing a medicine bag inside, and it includes: a plurality of micro through holes, and a water outlet port.Type: ApplicationFiled: June 22, 2016Publication date: January 5, 2017Inventors: Wen-kun Lin, Yuan-shan Liang, Jian-ke Huang
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Patent number: 9528251Abstract: A water output switching structure for a bath tub includes a shell; and a water inlet chamber. The shell is of a cylindrical shape, and the water inlet chamber is sleeved around by the rear end of an inner chamber of the shell placed laterally, while a lower side at a front end of the water inlet chamber is provided with a water output hole. A lower end of the guide rod is connected to and acting in cooperation with the extension portion, so that when the guide rod is pulled up, the switching valve core is swung downward to seal off the water output hole, and when the guide rod is pressed downward, the switching valve core is swung upward to open up the water output hole. The water output switching structure for a bath tub occupies less space and provides tight seal.Type: GrantFiled: July 9, 2015Date of Patent: December 27, 2016Assignee: XIAMEN RUNNER INDUSTRIAL CORPORATIONInventor: Jian-Ke Huang
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Patent number: 9502298Abstract: The embodiments of mechanisms for forming source/drain (S/D) regions of field effect transistors (FETs) described uses Cl2 as an etchant during the epitaxial formation of the S/D regions. The mechanisms involve using an asymmetric cyclic deposition and etch (ACDE) process that forms a preparation layer enable epitaxial growth of the following epitaxial layer with transistor dopants. The mechanisms also involve soaking the surface of substrate with dopant-containing precursors to enable sufficient incorporation of transistor dopants during the epitaxial growth of the S/D regions. By using Cl2 as etchants, the mechanisms also enables high throughput of the epitaxial growth of the S/D regions.Type: GrantFiled: July 14, 2015Date of Patent: November 22, 2016Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Chun Hsiung Tsai, Tsan-Yao Chen, Jian-An Ke
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Publication number: 20160284597Abstract: Embodiments of mechanisms for epitaxially growing one or more doped silicon-containing materials to form source and drain regions of finFET devices are provided in this disclosure. The dopants in the one or more doped silicon-containing materials can be driven into the neighboring lightly-doped-drain (LDD) regions by thermal anneal to dope the regions. The epitaxially growing process uses a cyclical deposition/deposition/etch (CDDE) process. In each cycle of the CDDE process, a first and a second doped materials are formed and a following etch removes most of the second doped material. The first doped material has a higher dopant concentration than the second material and is protected from the etching process by the second doped material. The CDDE process enables forming a highly doped silicon-containing material.Type: ApplicationFiled: June 6, 2016Publication date: September 29, 2016Inventors: Chun Hsiung Tsai, Jian-An Ke, Tsan-Yao Chen, Chin-Kun Wang
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Patent number: 9455200Abstract: A method of forming a semiconductor device includes receiving a substrate with a gate structure and forming a spacer layer over the substrate and the gate structure. The method further includes implanting carbon into the spacer layer at an angle tilted away from a first direction perpendicular to a top surface of the substrate, which increases etch resistance of the spacer layer on sidewalls of the gate structure. The method optionally includes implanting germanium into the spacer layer at the first direction, which decreases etch resistance of the spacer layer overlaying the gate structure and the substrate. The method further includes etching the spacer layer to expose the gate structure, resulting in a first portion of the spacer layer on the sidewalls of the gate structure. Due to increased etch resistance, the first portion of the spacer layer maintains its profile and thickness in subsequent fabrication processes.Type: GrantFiled: August 11, 2014Date of Patent: September 27, 2016Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Chun Hsiung Tsai, Jian-An Ke
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Publication number: 20160172342Abstract: A light-emitting device includes a substrate; a light-emitting unit formed on the substrate, comprising a first conductivity type semiconductor; a second conductivity type semiconductor; an active layer formed between the first and the second conductivity type semiconductors; and an exposed region formed in the light-emitting unit, exposing the first conductivity type semiconductor; a first electrode extending layer formed on the first conductivity type semiconductor in the exposed region; a second electrode extending layer formed on the second conductivity type semiconductor; a transparent insulator, formed on the light-emitting unit and filled in the exposed region; a first electrode formed on the transparent insulator; and a plurality of conductive channel layers formed in the transparent insulator; wherein one of the plurality of conductive channel layers connects the first electrode and one of the first and the second electrode extending layers.Type: ApplicationFiled: December 15, 2015Publication date: June 16, 2016Inventors: Che-Shiung Wu, Chan-Yang Lu, Jian-Ke Liu, Mei-Ying Bai, Cong-Hui Lin, Xiao-Qiang Zeng
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Patent number: 9362175Abstract: Embodiments of mechanisms for epitaxially growing one or more doped silicon-containing materials to form source and drain regions of finFET devices are provided in this disclosure. The dopants in the one or more doped silicon-containing materials can be driven into the neighboring lightly-doped-drain (LDD) regions by thermal anneal to dope the regions. The epitaxially growing process uses a cyclical deposition/deposition/etch (CDDE) process. In each cycle of the CDDE process, a first and a second doped materials are formed and a following etch removes most of the second doped material. The first doped material has a higher dopant concentration than the second material and is protected from the etching process by the second doped material. The CDDE process enables forming a highly doped silicon-containing material.Type: GrantFiled: October 2, 2014Date of Patent: June 7, 2016Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Chun Hsiung Tsai, Jian-An Ke, Tsan-Yao Chen, Chin-Kun Wang
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Publication number: 20160053470Abstract: A water output switching structure for a bath tub includes a shell; and a water inlet chamber. The shell is of a cylindrical shape, and the water inlet chamber is sleeved around by the rear end of an inner chamber of the shell placed laterally, while a lower side at a front end of the water inlet chamber is provided with a water output hole. A lower end of the guide rod is connected to and acting in cooperation with the extension portion, so that when the guide rod is pulled up, the switching valve core is swung downward to seal off the water output hole, and when the guide rod is pressed downward, the switching valve core is swung upward to open up the water output hole. The water output switching structure for a bath tub occupies less space and provides tight seal.Type: ApplicationFiled: July 9, 2015Publication date: February 25, 2016Inventor: Jian-Ke Huang
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Publication number: 20160042952Abstract: A method of forming a semiconductor device includes receiving a substrate with a gate structure and forming a spacer layer over the substrate and the gate structure. The method further includes implanting carbon into the spacer layer at an angle tilted away from a first direction perpendicular to a top surface of the substrate, which increases etch resistance of the spacer layer on sidewalls of the gate structure. The method optionally includes implanting germanium into the spacer layer at the first direction, which decreases etch resistance of the spacer layer overlaying the gate structure and the substrate. The method further includes etching the spacer layer to expose the gate structure, resulting in a first portion of the spacer layer on the sidewalls of the gate structure. Due to increased etch resistance, the first portion of the spacer layer maintains its profile and thickness in subsequent fabrication processes.Type: ApplicationFiled: August 11, 2014Publication date: February 11, 2016Inventors: Chun Hsiung Tsai, Jian-An Ke
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Publication number: 20150318212Abstract: The embodiments of mechanisms for forming source/drain (S/D) regions of field effect transistors (FETs) described uses Cl2 as an etchant during the epitaxial formation of the S/D regions. The mechanisms involve using an asymmetric cyclic deposition and etch (ACDE) process that forms a preparation layer enable epitaxial growth of the following epitaxial layer with transistor dopants. The mechanisms also involve soaking the surface of substrate with dopant-containing precursors to enable sufficient incorporation of transistor dopants during the epitaxial growth of the S/D regions. By using Cl2 as etchants, the mechanisms also enables high throughput of the epitaxial growth of the S/D regions.Type: ApplicationFiled: July 14, 2015Publication date: November 5, 2015Inventors: Chun Hsiung Tsai, Tsan-Yao Chen, Jian-An Ke
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Patent number: 9093468Abstract: The embodiments of mechanisms for forming source/drain (S/D) regions of field effect transistors (FETs) described uses Cl2 as an etchant during the epitaxial formation of the S/D regions. The mechanisms involve using an asymmetric cyclic deposition and etch (ACDE) process that forms a preparation layer enable epitaxial growth of the following epitaxial layer with transistor dopants. The mechanisms also involve soaking the surface of substrate with dopant-containing precursors to enable sufficient incorporation of transistor dopants during the epitaxial growth of the S/D regions. By using Cl2 as etchants, the mechanisms also enables high throughput of the epitaxial growth of the S/D regions.Type: GrantFiled: May 23, 2013Date of Patent: July 28, 2015Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Chun Hsiung Tsai, Tsan-Yao Chen, Jian-An Ke
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Publication number: 20150017776Abstract: Embodiments of mechanisms for epitaxially growing one or more doped silicon-containing materials to form source and drain regions of finFET devices are provided in this disclosure. The dopants in the one or more doped silicon-containing materials can be driven into the neighboring lightly-doped-drain (LDD) regions by thermal anneal to dope the regions. The epitaxially growing process uses a cyclical deposition/deposition/etch (CDDE) process. In each cycle of the CDDE process, a first and a second doped materials are formed and a following etch removes most of the second doped material. The first doped material has a higher dopant concentration than the second material and is protected from the etching process by the second doped material. The CDDE process enables forming a highly doped silicon-containing material.Type: ApplicationFiled: October 2, 2014Publication date: January 15, 2015Inventors: Chun Hsiung Tsai, Jian-An Ke, Tsan-Yao Chen, Chin-Kun Wang
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Patent number: 8877592Abstract: Embodiments of mechanisms for epitaxially growing one or more doped silicon-containing materials to form source and drain regions of finFET devices are provided in this disclosure. The dopants in the one or more doped silicon-containing materials can be driven into the neighboring lightly-doped-drain (LDD) regions by thermal anneal to dope the regions. The epitaxially growing process uses a cyclical deposition/deposition/etch (CDDE) process. In each cycle of the CDDE process, a first and a second doped materials are formed and a following etch removes most of the second doped material. The first doped material has a higher dopant concentration than the second material and is protected from the etching process by the second doped material. The CDDE process enables forming a highly doped silicon-containing material.Type: GrantFiled: March 14, 2013Date of Patent: November 4, 2014Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Chun Hsiung Tsai, Jian-An Ke, Tsan-Yao Chen, Chin-Kun Wang