Patents by Inventor Jian-Chang Lin

Jian-Chang Lin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 8093074
    Abstract: An analysis method for a semiconductor device is described. The semiconductor device having an abnormal region is provided. Thereafter, a focused ion beam microscope analysis process is performed to the abnormal region, wherein the result of the focused ion beam microscope analysis process shows that the abnormal region has a defect therein. After the focused ion beam microscope analysis process, an electrical property measurement step is performed to the abnormal region, so as to determine whether the defect in the abnormal region is a device failure root cause or not.
    Type: Grant
    Filed: December 18, 2009
    Date of Patent: January 10, 2012
    Assignee: United Microelectronics Corp.
    Inventors: Chih-Chung Chang, Jian-Chang Lin, Wen-Sheng Wu, Ching-Lin Chang, Chih-Yang Tsai
  • Publication number: 20110151597
    Abstract: An analysis method for a semiconductor device is described. The semiconductor device having an abnormal region is provided. Thereafter, a focused ion beam microscope analysis process is performed to the abnormal region, wherein the result of the focused ion beam microscope analysis process shows that the abnormal region has a defect therein. After the focused ion beam microscope analysis process, an electrical property measurement step is performed to the abnormal region, so as to determine whether the defect in the abnormal region is a device failure root cause or not.
    Type: Application
    Filed: December 18, 2009
    Publication date: June 23, 2011
    Applicant: United Microelectronics Corp.
    Inventors: Chih-Chung Chang, Jian-Chang Lin, Wen-Sheng Wu, Ching-Lin Chang, Chih-Yang Tsai