Patents by Inventor Jian-Chang Lin

Jian-Chang Lin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • SIGNAL CALIBRATION METHOD AND RELATED SMART WEARABLE DEVICE
    Publication number: 20240156405
    Abstract: A smart wearable device has a signal calibration function executed by a signal calibration method and applied to a finger, a limb and/or a neck of a user. The smart wearable device includes at least one physiological signal detector, at least one pressure detector and an operation processor. The at least one physiological signal detector is adapted to abut against a detection area of the user for detecting a physiological signal. The at least one pressure detector is disposed around the at least one physiological signal detector and adapted to detect a pressure value of the detection area. The operation processor is electrically connected with the at least one physiological signal detector and the at least one pressure detector. The operation processor is adapted to optimize the physiological signal when the pressure value exceeds a predefined pressure threshold.
    Type: Application
    Filed: January 12, 2024
    Publication date: May 16, 2024
    Applicant: PixArt Imaging Inc.
    Inventors: Yung-Chang Lin, Jian-Cheng Liao, Chun-Chih Chen, Sen-Huang Huang, Yen-Min Chang
  • Analysis method for semiconductor device
    Patent number: 8093074
    Abstract: An analysis method for a semiconductor device is described. The semiconductor device having an abnormal region is provided. Thereafter, a focused ion beam microscope analysis process is performed to the abnormal region, wherein the result of the focused ion beam microscope analysis process shows that the abnormal region has a defect therein. After the focused ion beam microscope analysis process, an electrical property measurement step is performed to the abnormal region, so as to determine whether the defect in the abnormal region is a device failure root cause or not.
    Type: Grant
    Filed: December 18, 2009
    Date of Patent: January 10, 2012
    Assignee: United Microelectronics Corp.
    Inventors: Chih-Chung Chang, Jian-Chang Lin, Wen-Sheng Wu, Ching-Lin Chang, Chih-Yang Tsai
  • Analysis method for semiconductor device
    Publication number: 20110151597
    Abstract: An analysis method for a semiconductor device is described. The semiconductor device having an abnormal region is provided. Thereafter, a focused ion beam microscope analysis process is performed to the abnormal region, wherein the result of the focused ion beam microscope analysis process shows that the abnormal region has a defect therein. After the focused ion beam microscope analysis process, an electrical property measurement step is performed to the abnormal region, so as to determine whether the defect in the abnormal region is a device failure root cause or not.
    Type: Application
    Filed: December 18, 2009
    Publication date: June 23, 2011
    Applicant: United Microelectronics Corp.
    Inventors: Chih-Chung Chang, Jian-Chang Lin, Wen-Sheng Wu, Ching-Lin Chang, Chih-Yang Tsai