Abstract: A memory device is disclosed, in which node contacts extend into a substrate, where they are come into electrical connection with active areas. This allows greater contact areas between the node contacts and the active areas and electrical connection of the node contacts with high ion concentration portions of the active areas. As a result, even when voids are formed in the node contacts, the node contacts can still possess desired connection performance. For node contacts allowed to contain voids, this enables them to be fabricated faster with lower difficulty, thus increasing manufacturing throughput of the memory device.

Abstract: A cigarette filter rod boxing machine, including a cigarette filter rod holding mechanism and a cigarette filter rod pushing mechanism. The cigarette filter rod holding mechanism includes a lifting groove and a lifting power mechanism. The cigarette filter rod pushing mechanism includes a bottom plate, a middle push plate, a middle push vertical plate, an upper push plate, and an upper push plate limiting mechanism. The middle push vertical plate is vertically fixed on one side of the middle push plate, and the other side of the middle push vertical plate is precisely opposite to the other side of the U-shaped groove body. The first power mechanism used for controlling the middle push plate and the components on the middle push plate to advance to or return from the inside of the lifting groove is arranged between the bottom plate and the middle push plate.

Abstract: A memory device is disclosed, in which node contacts extend into a substrate, where they are come into electrical connection with active areas. This allows greater contact areas between the node contacts and the active areas and electrical connection of the node contacts with high ion concentration portions of the active areas. As a result, even when voids are formed in the node contacts, the node contacts can still possess desired connection performance. For node contacts allowed to contain voids, this enables them to be fabricated faster with lower difficulty, thus increasing manufacturing throughput of the memory device.

Abstract: A memory device is disclosed, in which node contacts extend into a substrate, where they are come into electrical connection with active areas. This allows greater contact areas between the node contacts and the active areas and electrical connection of the node contacts with high ion concentration portions of the active areas. As a result, even when voids are formed in the node contacts, the node contacts can still possess desired connection performance. For node contacts allowed to contain voids, this enables them to be fabricated faster with lower difficulty, thus increasing manufacturing throughput of the memory device.

Abstract: A cigarette filter rod boxing machine, including a cigarette filter rod holding mechanism and a cigarette filter rod pushing mechanism. The cigarette filter rod holding mechanism includes a lifting groove and a lifting power mechanism. The cigarette filter rod pushing mechanism includes a bottom plate, a middle push plate, a middle push vertical plate, an upper push plate, and an upper push plate limiting mechanism. The middle push vertical plate is vertically fixed on one side of the middle push plate, and the other side of the middle push vertical plate is precisely opposite to the other side of the U-shaped groove body. The first power mechanism used for controlling the middle push plate and the components on the middle push plate to advance to or return from the inside of the lifting groove is arranged between the bottom plate and the middle push plate.

Abstract: A memory device is disclosed, in which node contacts extend into a substrate, where they are come into electrical connection with active areas. This allows greater contact areas between the node contacts and the active areas and electrical connection of the node contacts with high ion concentration portions of the active areas. As a result, even when voids are formed in the node contacts, the node contacts can still possess desired connection performance. For node contacts allowed to contain voids, this enables them to be fabricated faster with lower difficulty, thus increasing manufacturing throughput of the memory device.

Abstract: A method of reducing carryover of liquids, such as reagent and/or samples, in analytical or immunoassay testing. The method includes providing an incubation member including a plurality of reaction vessels thereon, pre-assigning certain ones of the reaction vessels in the incubation member for only first test types or certain reagent types for all test lots; and pre-assigning other ones of a second subset of reaction vessels in the incubation member for only second test types for all test lots. By ensuring no mixing of potentially interfering test types or reagent types from test lot to test lot, sample and/or reagent carryover is mitigated. Testing apparatus adapted to carry out the methods are provided, as are other aspects.

Abstract: Disclosed are methods adapted to calibrate a liquid transfer system. The methods include providing a probe having a fluidly-coupled pressure sensor, the pressure sensor adapted to sense an aspiration pressure associated with the probe, performing one or more air aspirations and taking one or more pressure readings with the pressure sensor, and using one or more of the pressure readings to calibrate the pressure sensor. A novel liquid transfer system is also disclosed, as are other aspects.

Abstract: A method of reducing carryover of liquids, such as reagent and/or samples, in analytical or immunoassay testing. The method includes providing an incubation member including a plurality of reaction vessels thereon, pre-assigning certain ones of the reaction vessels in the incubation member for only first test types or certain reagent types for all test lots; and pre-assigning other ones of a second subset of reaction vessels in the incubation member for only second test types for all test lots. By ensuring no mixing of potentially interfering test types or reagent types from test lot to test lot, sample and/or reagent carryover is mitigated. Testing apparatus adapted to carry out the methods are provided, as are other aspects.

Abstract: The present invention includes upconversion materials such as lanthanide-sensitized oxides that are useful for converting low-energy photons into high-energy photons. Because silicon-based solar cells have an intrinsic optical band-gap of 1.1 eV, low-energy photons having a wavelength longer than 1100 nm, e.g., infrared photons, cannot be absorbed by the solar cell and used for photovoltaic energy conversion. Only those photons that have an energy equal to or greater than the solar cell's band gap, e.g., visible photons, can be absorbed and used for photovoltaic energy conversion. The oxides described herein transform photons having an energy less than the energy of a solar cell's band gap into photons having an energy equal to or greater than the energy of the band gap. When these oxides are incorporated into a solar cell, they provide more photons for photovoltaic energy conversion than otherwise would be available in their absence.

Abstract: The present invention includes upconversion materials such as lanthanide-sensitized oxides that are useful for converting low-energy photons into high-energy photons. Because silicon-based solar cells have an intrinsic optical band-gap of 1.1 eV, low-energy photons having a wavelength longer than 1100 nm, e g., infrared photons, cannot be absorbed by the solar cell and used for photovoltaic energy conversion. Only those photons that have an energy equal to or greater than the solar cell's band gap, e.g., visible photons, can be absorbed and used for photovoltaic energy conversion. The oxides described herein transform photons having an energy less than the energy of a solar cell's band gap into photons having an energy equal to or greater than the energy of the band gap. When these oxides are incorporated into a solar cell, they provide more photons for photovoltaic energy conversion than otherwise would be available in their absence.

Abstract: Disclosed are methods adapted to calibrate a liquid transfer system. The methods include providing a probe having a fluidly-coupled pressure sensor, the pressure sensor adapted to sense an aspiration pressure associated with the probe, performing one or more air aspirations and taking one or more pressure readings with the pressure sensor, and using one or more of the pressure readings to calibrate the pressure sensor. A novel liquid transfer system is also disclosed, as are other aspects.

Abstract: The present invention relates generally to sub-microelectronic circuitry, and more particularly to nanometer-scale articles, including nanoscale wires which can be selectively doped at various locations and at various levels. In some cases, the articles may be single crystals. The nanoscale wires can be doped, for example, differentially along their length, or radially, and either in terms of identity of dopant, concentration of dopant, or both. This may be used to provide both n-type and p-type conductivity in a single item, or in different items in close proximity to each other, such as in a crossbar array. The fabrication and growth of such articles is described, and the arrangement of such articles to fabricate electronic, optoelectronic, or spintronic devices and components.

Abstract: The present invention relates generally to sub-microelectronic circuitry, and more particularly to nanometer-scale articles, including nanoscale wires which can be selectively doped at various locations and at various levels. In some cases, the articles may be single crystals. The nanoscale wires can be doped, for example, differentially along their length, or radially, and either in terms of identity of dopant, concentration of dopant, or both. This may be used to provide both n-type and p-type conductivity in a single item, or in different items in close proximity to each other, such as in a crossbar array. The fabrication and growth of such articles is described, and the arrangement of such articles to fabricate electronic, optoelectronic, or spintronic devices and components.

Abstract: The present invention relates generally to sub-microelectronic circuitry, and more particularly to nanometer-scale articles, including nanoscale wires which can be selectively doped at various locations and at various levels. In some cases, the articles may be single crystals. The nanoscale wires can be doped, for example, differentially along their length, or radially, and either in terms of identity of dopant, concentration of dopant, or both. This may be used to provide both n-type and p-type conductivity in a single item, or in different items in close proximity to each other, such as in a crossbar array. The fabrication and growth of such articles is described, and the arrangement of such articles to fabricate electronic, optoelectronic, or spintronic devices and components.

Abstract: The present invention relates generally to sub-microelectronic circuitry, and more particularly to nanometer-scale articles, including nanoscale wires which can be selectively doped at various locations and at various levels. In some cases, the articles may be single crystals. The nanoscale wires can be doped, for example, differentially along their length, or radially, and either in terms of identity of dopant, concentration of dopant, or both. This may be used to provide both n-type and p-type conductivity in a single item, or in different items in close proximity to each other, such as in a crossbar array. The fabrication and growth of such articles is described, and the arrangement of such articles to fabricate electronic, optoelectronic, or spintronic devices and components.

Abstract: The present invention relates generally to sub-microelectronic circuitry, and more particularly to nanometer-scale articles, including nanoscale wires which can be selectively doped at various locations and at various levels. In some cases, the articles may be single crystals. The nanoscale wires can be doped, for example, differentially along their length, or radially, and either in terms of identity of dopant, concentration of dopant, or both. This may be used to provide both n-type and p-type conductivity in a single item, or in different items in close proximity to each other, such as in a crossbar array. The fabrication and growth of such articles is described, and the arrangement of such articles to fabricate electronic, optoelectronic, or spintronic devices and components.

Abstract: The present application relates to a method of making liposomes having membrane proteins incorporated therein, the method comprising: providing the membrane protein in solution; providing a solution of preformed liposomes; and incubating the mixture. Prior to the step of providing a solution of preformed liposomes, the liposomes are formed by combining a mixture of phospholipids with a solution of at least one type of unsaturated fatty acid. The methods of the present invention further relate to the method of making a reagent comprising tissue factor reconstituted into preformed liposomes. The method of the present invention for making a tissue factor reagent comprises: providing tissue factor in solution; providing a solution of preformed liposomes comprising a mixture of phospholipids and at least one type of unsaturated fatty acid; and incubating the mixture.

Abstract: The present invention relates generally to the field of prothrombin time reagents for determining dysfunction in the coagulation system and more specifically to reagents made from native thromboplastin or purified or recombinant tissue factor and phospholipids from a natural or synthetic source. The present invention relates to methods to make a diagnostic reagent that includes a membrane-bound protein incorporated into a liposome and having additional empty liposomes (liposomes without membrane-bound protein incorporated therein) added to the solution.

Abstract: The present invention relates generally to sub-microelectronic circuitry, and more particularly to nanometer-scale articles, including nanoscale wires which can be selectively doped at various locations and at various levels. In some cases, the articles may be single crystals. The nanoscale wires can be doped, for example, differentially along their length, or radially, and either in terms of identity of dopant, concentration of dopant, or both. This may be used to provide both n-type and p-type conductivity in a single item, or in different items in close proximity to each other, such as in a crossbar array. The fabrication and growth of such articles is described, and the arrangement of such articles to fabricate electronic, optoelectronic, or spintronic devices and components.