Abstract: A recording head includes a near-field transducer configured to heat one or more portions of a magnetic storage layer to generate a thermal profile in the magnetic storage layer. The recording head includes a write pole configured to generate a magnetization pattern, in the magnetic storage layer, that overlaps with the thermal profile in the magnetic storage layer. The write pole includes a non-uniform surface that faces the magnetic storage layer, the non-uniform surface configured to cause a portion of the magnetization pattern to be approximately linear.

Abstract: This disclosure relates to a memory device that includes at least one magnetic track on a substrate, wherein the at least one magnetic track comprises one or more magnetic domains. Contacts can be disposed on the at least one magnetic track according to a predetermined arrangement to form a plurality of bitcells on the at least one magnetic track, wherein each one of the plurality of bitcells is configured to store at least one magnetic domain. The device can include a timing circuit connected to the contacts, with the timing circuit being configured to apply to the contacts multiple phases of electric currents according to a predetermined timing sequence to cause the at least one magnetic domain to shift from the each one of the plurality of bitcells to an adjacent one of the plurality of bitcells on the at least one magnetic track.

Abstract: A recording head includes a near-field transducer configured to heat one or more portions of a magnetic storage layer to generate a thermal profile in the magnetic storage layer. The recording head includes a write pole configured to generate a magnetization pattern, in the magnetic storage layer, that overlaps with the thermal profile in the magnetic storage layer. The write pole includes a non-uniform surface that faces the magnetic storage layer, the non-uniform surface configured to cause a portion of the magnetization pattern to be approximately linear.

Abstract: In one aspect, a magnetic data storage device comprises a template layer, an underlayer, and a magnetic recording layer. The template layer includes a patterned array of protruding features. The underlayer is formed on the patterned array of protruding features of the template layer. The underlayer includes an array pattern of protruding features that aligns with the patterned array of protruding features of the template layer. The magnetic recording layer is formed on the underlayer. The magnetic recording layer includes columnar grains of magnetic material separated by grain boundaries of non-magnetic material, with each columnar grain being on a protruding feature of the array pattern of the underlayer, and the grain boundaries being in trenches between the protruding features of the array pattern of the underlayer.

Abstract: In one aspect, a magnetic data storage device comprises a template layer, an underlayer, and a magnetic recording layer. The template layer includes a patterned array of protruding features. The underlayer is formed on the patterned array of protruding features of the template layer. The underlayer includes an array pattern of protruding features that aligns with the patterned array of protruding features of the template layer. The magnetic recording layer is formed on the underlayer. The magnetic recording layer includes columnar grains of magnetic material separated by grain boundaries of non-magnetic material, with each columnar grain being on a protruding feature of the array pattern of the underlayer, and the grain boundaries being in trenches between the protruding features of the array pattern of the underlayer.

Abstract: An oscillation mechanism comprises a first spin-polarization layer having a first magnetic moment; a second spin-polarization layer having a second magnetic moment, wherein an orientation of the second magnetic moment is configured to oppose an orientation of the first magnetic moment; and a field-generating layer disposed between the first spin-polarization layer and the second spin-polarization layer for generating a magnetic field that oscillates around one or more of the first and second magnetic moment orientations.

Abstract: In one aspect, a nonvolatile magnetic logic device comprises an electrically insulating layer, a write path, and a read path. The write path comprises a plurality of write path terminals and a magnetic layer having a uniform magnetization direction that is indicative of a direction of magnetization of the magnetic layer in a steady state. A logic state is written to the nonvolatile magnetic logic device by passing a current through the plurality of write path terminals. The read path comprises a plurality of read path terminals for evaluation of the logic state. The electrically insulating layer promotes electrical isolation between the read path and the write path and magnetic coupling of the read path to the write path.

Abstract: In one aspect, a nonvolatile magnetic logic device comprises an electrically insulating layer, a write path, and a read path. The write path comprises a plurality of write path terminals and a magnetic layer having a uniform magnetization direction that is indicative of a direction of magnetization of the magnetic layer in a steady state. A logic state is written to the nonvolatile magnetic logic device by passing a current through the plurality of write path terminals. The read path comprises a plurality of read path terminals for evaluation of the logic state. The electrically insulating layer promotes electrical isolation between the read path and the write path and magnetic coupling of the read path to the write path.

Abstract: A process of fabricating a perpendicular magnetic recording medium. In one embodiment, the process may comprise forming a metallic buffer layer with a (002) texture on an underlayer using a deposition process performed at a temperature below 30° C. The underlayer may have a crystalline (001) texture. The process may further comprise forming a perpendicular magnetic recording layer on top of the metallic buffer layer using a deposition process performed at a temperature above 350° C. The magnetic recording layer may comprise a magnetic material with a L10 crystalline structure and with a c-axis perpendicular to a plane of the perpendicular magnetic recording layer. The process may further comprise removing metal of the metallic buffer layer from a top surface of the perpendicular magnetic recording layer that moved to the top surface of the perpendicular magnetic recording layer during the forming of the perpendicular magnetic recording layer.

Abstract: A method of writing binary data comprising (i) heating a magnetic microstructure from an initial temperature to an above-ambient temperature that is not less than a transition temperature for the magnetic microstructure, which causes a phase transition interlayer of the magnetic microstructure to transition from an antiferromagnetic phase to a ferromagnetic phase; and (ii) reversing an orientation of magnetization of a magnetic storage layer of the magnetic microstructure with a magnetic field while the phase transition interlayer is in the ferromagnetic phase.

Abstract: A magnetic microstructure comprising (i) a magnetic storage layer having a magnetic easy axis perpendicular to a film plane of the storage magnetic layer; (ii) a magnetic assist layer having a magnetic easy axis in the film plane; and (iii) a phase transition interlayer between the magnetic storage layer and the magnetic assist layer. The phase transition layer comprises a material, such as FeRh, that switches from antiferromagnetic at ambient to ferromagnetic at a transition temperature that is greater than ambient, but below the Curie temperature. When the phase transition interlayer is in antiferromagnetic phase, there exists little magnetic coupling between the storage and assist layers. When the interlayer changes to ferromagnetic phase, the interlayer couples the magnetic moments of the storage and assist layer ferromagnetically.

Abstract: A process of fabricating a perpendicular magnetic recording medium. In one embodiment, the process may comprise forming a metallic buffer layer with a (002) texture on an underlayer using a deposition process performed at a temperature below 30° C. The underlayer may have a crystalline (001) texture. The process may further comprise forming a perpendicular magnetic recording layer on top of the metallic buffer layer using a deposition process performed at a temperature above 350° C. The magnetic recording layer may comprise a magnetic material with a L10 crystalline structure and with a c-axis perpendicular to a plane of the perpendicular magnetic recording layer. The process may further comprise removing metal of the metallic buffer layer from a top surface of the perpendicular magnetic recording layer that moved to the top surface of the perpendicular magnetic recording layer during the forming of the perpendicular magnetic recording layer.

Abstract: A magnetic memory or MRAM memory system comprising an M×N crossbar array of MRAM cells. Each memory cell stores binary data bits with switchable magnetoresistive tunnel junctions (MJT) where the electrical conductance changes as the magnetic moment of one electrode (the storage layer) in the MJT switches direction. The switching of the magnetic moment is assisted by a phase transition interlayer that transitions from antiferromagnetic to ferromagnetic at a well defined, above ambient temperature.

Abstract: A perpendicular spin-torque-driven magnetic oscillator is disclosed. According to various embodiments, the magnetic oscillator comprises a magnetic reference stack, a magnetic oscillating stack, and an interlayer between the reference stack and the oscillating stack such that the reference stack and the oscillating stack are exchange coupled. The reference stack may have sufficient perpendicular anisotropy such that it causes, via the spin momentum transfer effect, the spin polarization of the conducting electrons in the oscillating stack to produce a spin torque on the local magnetization of the oscillating layer. As such, the oscillating stack may produce a sustained gyromagnetic oscillation around the perpendicular axis of the oscillating stack when (i) the oscillating stack and the reference stack have opposite magnetizations and (ii) there is a direct current flowing in the magnetic oscillator from the oscillating stack to the reference stack.

Abstract: A magnetic memory or MRAM memory system comprising an M×N crossbar array of MRAM cells. Each memory cell stores binary data bits with switchable magnetoresistive tunnel junctions (MJT) where the electrical conductance changes as the magnetic moment of one electrode (the storage layer) in the MJT switches direction. The switching of the magnetic moment is assisted by a phase transition interlayer that transitions from antiferromagnetic to ferromagnetic at a well defined, above ambient temperature.

Abstract: A magnetic microstructure comprising (i) a magnetic storage layer having a magnetic easy axis perpendicular to a film plane of the storage magnetic layer; (ii) a magnetic assist layer having a magnetic easy axis in the film plane; and (iii) a phase transition interlayer between the magnetic storage layer and the magnetic assist layer. The phase transition layer comprises a material, such as FeRh, that switches from antiferromagnetic at ambient to ferromagnetic at a transition temperature that is greater than ambient, but below the Curie temperature. When the phase transition interlayer is in antiferromagnetic phase, there exists little magnetic coupling between the storage and assist layers. When the interlayer changes to ferromagnetic phase, the interlayer couples the magnetic moments of the storage and assist layer ferromagnetically.

Abstract: A perpendicular spin-torque-driven magnetic oscillator is disclosed. According to various embodiments, the magnetic oscillator comprises a magnetic reference stack, a magnetic oscillating stack, and an interlayer between the reference stack and the oscillating stack such that the reference stack and the oscillating stack are exchange coupled. The reference stack may have sufficient perpendicular anisotropy such that it causes, via the spin momentum transfer effect, the spin polarization of the conducting electrons in the oscillating stack to produce a spin torque on the local magnetization of the oscillating layer. As such, the oscillating stack may produce a sustained gyromagnetic oscillation around the perpendicular axis of the oscillating stack when (i) the oscillating stack and the reference stack have opposite magnetizations and (ii) there is a direct current flowing in the magnetic oscillator from the oscillating stack to the reference stack.

Abstract: A magnetic memory cell and a manufacturing method for the magnetic memory cell are provided. In the magnetic memory cell, a pinned layer of a magnetic bottom electrode can be formed with sizes different from the free layer. The wider magnetic bottom electrode produces a preferable uniform bias field that will create a normal magnetization vector distribution in the end domain of the free layer, and thus achieving a preferred switching property. The above process can also be achieved through self-alignment. In addition, by adjusting the bias field of the bottom electrode, uniform field distribution over entire free layer can be significantly improved, and thus the magnetic memory cell will have a very low writing toggle current.

Abstract: A ferromagnetic thin-film based array of directed magnetic field generating structures having a plurality of toroidally shaped layer stacks each with a pair of ferromagnetic material layers separated by an intermediate layer of nonmagnetic material. Electrical connections are made to opposite sides thereof. A serpentine first side electrical conductor is folded back so as to have parallel branches and together zigzag to cross over each stack on one side thereof. A serpentine second side electrical conductor, also folded back so as to have parallel branches, can be further provided with these branches together zigzagging to cross each stack on an opposite side thereof. These first and second side electrical conductors can be electrically joined to form an array electrical conductor.

Abstract: A ferromagnetic thin-film based array of directed magnetic field generating structures having a plurality of toroidally shaped layer stacks each with a pair of ferromagnetic material layers separated by an intermediate layer of nonmagnetic material. Electrical connections are made to opposite sides thereof. A serpentine first side electrical conductor is folded back so as to have parallel branches and together zigzag to cross over each stack on one side thereof. A serpentine second side electrical conductor, also folded back so as to have parallel branches, can be further provided with these branches together zigzagging to cross each stack on an opposite side thereof. These first and second side electrical conductors can be electrically joined to form an array electrical conductor.