Abstract: A nucleation device for causing phase change in a heat storage material from a liquid state to a solid state, the nucleation device including: an elastic member including a plurality of annular portions with a ring shape wound in substantially close contact with one another, the elastic member being elastically displaceable such that adjacent pairs of the plurality of annular portions in substantially close contact with one another separate from one another; wherein the heat storage material is caused to phase change by the elastic member elastically displacing while disposed in the heat storage material.

Abstract: A nucleation device for causing phase change in a heat storage material from a liquid state to a solid state, the nucleation device including: an elastic member including a plurality of annular portions with a ring shape wound in substantially close contact with one another, the elastic member being elastically displaceable such that adjacent pairs of the plurality of annular portions in substantially close contact with one another separate from one another; wherein the heat storage material is caused to phase change by the elastic member elastically displacing while disposed in the heat storage material.

Abstract: A method of fabricating transition metal dichalcogenides includes a preparing step, a steaming step and a depositing step. The preparing step is performed for providing a transition metal substrate, a reactive gas and a solid chalcogenide. The steaming step is performed for heating the solid chalcogenide to generate a chalcogenide gas in a steaming space. The depositing step is performed for introducing the reactive gas into the chalcogenide gas to ionize the chalcogenide gas so as to generate a chalcogenide plasma in a depositing space. The depositing step is performed under a process vacuum pressure from low vacuum pressure to atmospheric pressure. The reactive gas and the chalcogenide gas are flowed from top to bottom through a top of the transition metal substrate. The loading substrate is heated at a loading substrate temperature, and the steaming space is different from the depositing space.

Abstract: A method of fabricating transition metal dichalcogenides includes a preparing step, a steaming step and a depositing step. The preparing step is performed for providing a transition metal substrate, a reactive gas and a solid chalcogenide. The steaming step is performed for heating the solid chalcogenide to generate a chalcogenide gas in a steaming space. The depositing step is performed for introducing the reactive gas into the chalcogenide gas to ionize the chalcogenide gas so as to generate a chalcogenide plasma in a depositing space. The depositing step is performed under a process vacuum pressure from low vacuum pressure to atmospheric pressure. The reactive gas and the chalcogenide gas are flowed from top to bottom through a top of the transition metal substrate. The loading substrate is heated at a loading substrate temperature, and the steaming space is different from the depositing space.