Abstract: The present disclosure relates to a fast mechanical switch and an operating method, wherein the fast mechanical switch comprises: a closed housing; a vacuum interrupter; an electromagnetic repulsion mechanism disposed below the vacuum interrupter, wherein the electromagnetic repulsion mechanism has: a first repulsion unit electrically connected to a first electrical terminal; a second repulsion unit electrically connected to a second electrical terminal independent of the first electrical terminal and comprising a third repulsion disk located below and spaced apart from the second repulsion disk, wherein the second electrical terminal is constructed to operatively control the third repulsion disk responsive to the first repulsion unit such that the third repulsion disk applies a resistance to the second repulsion disk when the second repulsion disk is moved downwardly for opening and applies an thrust to the second repulsion disk when it is moved upwardly for closing.

Abstract: The invention relates to activators of FXR useful in the treatment of autoimmune disorders, liver disease, intestinal disease, kidney disease, cancer, and other diseases in which FXR plays a role, having the Formula (I): wherein L1, A, X1, X2, R1, R2, and R3 are described herein.

Abstract: This application describes a method for manufacturing storage containers by spirally winding with multiple bundles of fibers. Two sets of yarn guide nozzles distributed in a circumferential array form a first spiral winding structure and a second spiral winding structure respectively, and a spiral winding device with the two layers of spiral winding structures cooperates with feeding devices carrying wound containers, to realize the spiral winding of the multiple bundles of fibers on the wound containers; the feeding devices drive the wound containers to do axial reciprocating motion and axial rotation, and the spiral winding device drives the yarn guide nozzles to do radial telescopic motion and self-rotation motion; and according to the lengths of axial dimensions of the wound containers, single-station double-layer spiral winding or double-station single-layer spiral winding is selected.

Abstract: The present disclosure generally relates to a storage device comprising soft bias structures having high coercivity and high anisotropy, and a method of forming thereof. The soft bias structures may be formed by moving a wafer in a first direction under a plume of NiFe to deposit a first NiFe layer at a first angle, moving the wafer in a second direction anti-parallel to the first direction to deposit a second NiFe layer at a second angle on the first NiFe layer, and repeating one or more times. The soft bias structures may be formed by rotating a wafer to a first position, depositing a first NiFe layer at a first angle, rotating the wafer to a second position, depositing a second NiFe layer at a second angle on the first NiFe layer, and repeating one or more times. The first and second NiFe layers have different grain structures.

Abstract: The present disclosure generally relates to a storage device comprising soft bias structures having high coercivity and high anisotropy, and a method of forming thereof. The soft bias structures may be formed by moving a wafer in a first direction under a plume of NiFe to deposit a first NiFe layer at a first angle, moving the wafer in a second direction anti-parallel to the first direction to deposit a second NiFe layer at a second angle on the first NiFe layer, and repeating one or more times. The soft bias structures may be formed by rotating a wafer to a first position, depositing a first NiFe layer at a first angle, rotating the wafer to a second position, depositing a second NiFe layer at a second angle on the first NiFe layer, and repeating one or more times. The first and second NiFe layers have different grain structures.

Abstract: The present disclosure generally relates to a storage device comprising soft bias structures having high coercivity and high anisotropy, and a method of forming thereof. The soft bias structures may be formed by moving a wafer in a first direction under a plume of NiFe to deposit a first NiFe layer at a first angle, moving the wafer in a second direction anti-parallel to the first direction to deposit a second NiFe layer at a second angle on the first NiFe layer, and repeating one or more times. The soft bias structures may be formed by rotating a wafer to a first position, depositing a first NiFe layer at a first angle, rotating the wafer to a second position, depositing a second NiFe layer at a second angle on the first NiFe layer, and repeating one or more times. The first and second NiFe layers have different grain structures.

Abstract: The present disclosure generally relates to a storage device comprising soft bias structures having high coercivity and high anisotropy, and a method of forming thereof. The soft bias structures may be formed by moving a wafer in a first direction under a plume of NiFe to deposit a first NiFe layer at a first angle, moving the wafer in a second direction anti-parallel to the first direction to deposit a second NiFe layer at a second angle on the first NiFe layer, and repeating one or more times. The soft bias structures may be formed by rotating a wafer to a first position, depositing a first NiFe layer at a first angle, rotating the wafer to a second position, depositing a second NiFe layer at a second angle on the first NiFe layer, and repeating one or more times. The first and second NiFe layers have different grain structures.

Abstract: One embodiment can provide a solar module. The solar module can include one or more moisture-resistant photovoltaic structures. A respective photovoltaic structure can include a base layer, an emitter layer positioned on a first side of the base layer, and a moisture barrier layer positioned on a first side of the emitter layer, thereby reducing the amount of moisture that reaches a junction between the base layer and the emitter layer.

Abstract: One embodiment can provide a solar module. The solar module can include one or more moisture-resistant photovoltaic structures. A respective photovoltaic structure can include a base layer, an emitter layer positioned on a first side of the base layer, and a moisture barrier layer positioned on a first side of the emitter layer, thereby reducing the amount of moisture that reaches a junction between the base layer and the emitter layer.

Abstract: A system for fabrication of a photovoltaic structure is provided. During fabrication, the system can deposit a doped amorphous Si layer on a first surface of a crystalline Si substrate; and deposit, using a physical vapor deposition machine, a transparent conductive oxide layer on the doped amorphous Si layer. The deposited transparent conductive oxide layer can include In2O3 doped with TiO2 and Ta2O5, and depositing the transparent conductive oxide layer can involve maintaining the Si substrate at a temperature below 130° C. The system can further deposit a metallic layer on the transparent conductive oxide layer, and anneal the transparent conductive oxide layer.

Abstract: A low-reflection-loss low-angle-sensitive colored photovoltaic (PV) module is described. This colored PV module includes a transparent substrate; an array of solar cells encapsulated between a top encapsulation sheet and a bottom encapsulation sheet; and a color filter structure embedded between the top encapsulation sheet and the transparent substrate and configured to cause wavelength-selective reflections of incident light received by the colored PV module. Moreover, the transparent substrate includes a flat front surface configured to receive the incident light and a texture back surface configured with an array of features. The color filter structure is formed on the textured back surface of the transparent substrate to create a textured interface between the textured back surface and the color filter structure.

Abstract: Provided are light emitting diodes (LEDs) and methods of fabricating such LEDs. An LED may include a transparent conductive oxide (TCO) layer having a varying refractive index. For example, the refractive index may be higher at the interface of the TCO layer with an epitaxial stack than on the side of the TCO layer. The refractive index variability allows reducing light intensity losses in the LED. The refractive index variability may be achieved by feeding a substrate through a deposition chamber having a variable concentration of at least one process gas, such as oxygen. Specifically, the concentration of the process gas may be higher at one slit opening than at another slit opening. As the substrate moves through the deposition chamber, the TCO layer is continuously deposited. Due to the concentration variability, the resulting TCO layer may have a variable composition throughout the thickness of the TCO layer.

Abstract: Provided are light emitting diodes (LEDs) and methods of fabricating such LEDs. An LED may include a transparent conductive oxide (TCO) layer having a varying refractive index. For example, the refractive index may be higher at the interface of the TCO layer with an epitaxial stack than on the side of the TCO layer. The refractive index variability allows reducing light intensity losses in the LED. The refractive index variability may be achieved by feeding a substrate through a deposition chamber having a variable concentration of at least one process gas, such as oxygen. Specifically, the concentration of the process gas may be higher at one slit opening than at another slit opening. As the substrate moves through the deposition chamber, the TCO layer is continuously deposited. Due to the concentration variability, the resulting TCO layer may have a variable composition throughout the thickness of the TCO layer.

Abstract: Provided are light emitting diodes (LEDs) and methods of fabricating such LEDs. Specifically, an LED has an epitaxial stack and current distribution layer disposed on and interfacing the epitaxial stack. The current distribution layer includes indium oxide and zinc oxide such that the concentration of indium oxide is between about 5% and 15% by weight. During fabrication, the current distribution layer is annealed at a temperature of less than about 500° C. or even at less than about 400° C. These low anneal temperature helps preserving the overall thermal budget of the LED while still yielding a current distribution layer having a low resistivity and low adsorption. A particular composition and method of forming the current distribution layer allows using lower annealing temperatures. In some embodiments, the current distribution layer is sputtered using indium oxide and zinc oxide targets at a pressure of less than 5 mTorr.

Abstract: Transparent conductive layers usable as ohmic contacts for III-V semiconductors with work functions between 4.1 and 4.7 eV are formed by annealing layers of transparent oxide with thin (0.1-5nm) layers of conductive metal. When the layers interdiffuse during the annealing, some of the conductive metal atoms remain free to reduce resistivity and others oxidize to reduce optical absorption. Examples of the transparent oxides include indium-tin oxide, zinc oxide, and aluminum zinc oxide with up to 5 wt % Al. Examples of the metals include aluminum and titanium. The work function of the transparent conductive layer can be tuned to match the contacted semiconductor by adjusting the ratio of metal to transparent oxide.

Abstract: Transparent ohmic contacts to p-GaN and other high-work-function (?4.2 eV) semiconductors are fabricated from zinc stannate (e.g., ZnSnO3). ZnO and SnO2 may be sputtered from separate targets and annealed to form the zinc stannate. The Zn:Sn ratio may be tuned over the range between 1:2 and 2:1 to optimize bandgap, work function, conductivity, and transparency for the particular semiconductor and wavelength of interest. Conductivity may be improved by crystallizing the zinc stannate, by doping with up to 5 wt % Al or In, or both.

Abstract: Transparent conductive layers usable as ohmic contacts for III-V semiconductors with work functions between 4.1 and 4.7 eV are formed by annealing layers of transparent oxide with thin (0.1-5 nm) layers of conductive metal. When the layers interdiffuse during the annealing, some of the conductive metal atoms remain free to reduce resistivity and others oxidize to reduce optical absorption. Examples of the transparent oxides include indium-tin oxide, zinc oxide, and aluminum zinc oxide with up to 5 wt % Al. Examples of the metals include aluminum and titanium. The work function of the transparent conductive layer can be tuned to match the contacted semiconductor by adjusting the ratio of metal to transparent oxide.

Abstract: A ternary transparent conductive oxide, indium zinc oxide (IZO), is formed as a thin film by co-sputtering zinc oxide with indium oxide at a deposition temperature between 25 and 200 C. Optionally, up to 1-2% Al may be added by various methods. The layers may be annealed at temperatures between 200 and 400 C. Measurements of IZO with 75-85 wt % In2O3 showed low resistivity and low visible absorbance, both of which were thermally stable up to 400 C.

Abstract: Transparent ohmic contacts to p-GaN and other high-work-function (?4.2 eV) semiconductors are fabricated from zinc stannate (e.g., ZnSnO3). ZnO and SnO2 may be sputtered from separate targets and annealed to form the zinc stannate. The Zn:Sn ratio may be tuned over the range between 1:2 and 2:1 to optimize bandgap, work function, conductivity, and transparency for the particular semiconductor and wavelength of interest. Conductivity may be improved by crystallizing the zinc stannate, by doping with up to 5 wt % Al or In, or both.