Abstract: A method of manufacturing a light-emitting device is disclosed. The method includes providing a light-emitting diode wafer, including a substrate and a semiconductor stack on the substrate, wherein the semiconductor stack has a lower surface facing the substrate and an upper surface opposite to the lower surface; providing a first laser on the light-emitting diode wafer and irradiating the light-emitting diode wafer from the upper surface to form a plurality of scribing lines on the upper surface; providing an etching process; providing and focusing a second laser on an interior of the substrate to form one or a plurality of textured areas in the substrate; and providing force on the light-emitting diode wafer to separate the light-emitting diode wafer into a plurality of light-emitting diode chips along the plurality of scribing lines.

Abstract: A method of manufacturing a light-emitting device is disclosed. The method includes providing a light-emitting diode wafer, including a substrate and a semiconductor stack on the substrate, wherein the semiconductor stack has a lower surface facing the substrate and an upper surface opposite to the lower surface; providing a first laser on the light-emitting diode wafer and irradiating the light-emitting diode wafer from the upper surface to form a plurality of scribing lines on the upper surface; providing an etching process; providing and focusing a second laser on an interior of the substrate to form one or a plurality of textured areas in the substrate; and providing force on the light-emitting diode wafer to separate the light-emitting diode wafer into a plurality of light-emitting diode chips along the plurality of scribing lines.

Abstract: A manufacturing method of light-emitting device is disclosed. The method includes providing an LED wafer comprising a substrate and a semiconductor stack formed on the substrate, wherein the semiconductor stack has a lower surface facing the substrate and an upper surface opposite to the lower surface; providing a first laser to the LED wafer and irradiating the LED wafer from the upper surface to form a plurality of scribing lines on the upper surface; providing and focusing a second laser on an interior of the substrate to form a plurality of textured areas in the substrate; and providing force on the LED wafer to separate the LED wafer into a plurality of LED chips.

Abstract: A manufacturing method of light-emitting device is disclosed. The method includes providing an LED wafer comprising a substrate and a semiconductor stack formed on the substrate, wherein the semiconductor stack has a lower surface facing the substrate and an upper surface opposite to the lower surface; providing a first laser to the LED wafer and irradiating the LED wafer from the upper surface to form a plurality of scribing lines on the upper surface; providing and focusing a second laser on an interior of the substrate to form a plurality of textured areas in the substrate; and providing force on the LED wafer to separate the LED wafer into a plurality of LED chips.

Abstract: A light-emitting device is disclosed. The light-emitting diode device includes a substrate, comprising an upper surface, a lower surface and a plurality of side surfaces; and a semiconductor stack formed on the upper surface of the substrate; wherein the plurality of side surfaces comprises: a first region, adjacent to the upper surface and having a first surface roughness; a second region, comprising one or a plurality of textured areas substantially parallel to the upper surface and/or the lower surface in a side view, wherein the textured area is composed of a plurality of textured stripes and has a second surface roughness; and a third region, having a third surface roughness and being between the first region and the second region, and/or between the plurality of textured areas; wherein the first surface roughness is smaller than the second surface roughness, and the third surface roughness is smaller than the first surface roughness.

Abstract: A manufacturing method of light-emitting device is disclosed. The method includes providing an LED wafer comprising a substrate and a semiconductor stack formed on the substrate, wherein the semiconductor stack has a lower surface; providing a first laser to the LED wafer to cut through the semiconductor stack with a depth into the substrate; providing and focusing a second laser on an interior of the substrate to form a plurality of textured areas in the substrate; and providing force on the LED wafer to separate the LED wafer into a plurality of LED chips.

Abstract: Signal strength display device for wireless Hub, which is disposed on a mother unit or daughter unit of the wireless Hub. The signal strength display device includes: a wireless transceiver circuit; a signal analyzing unit connected to the output terminal of said wireless transceiver circuit for calculating and analyzing the strength of the radio signal received by said wireless transceiver circuit to generate a corresponding value; an analog-to-digital converting unit connected with said signal analyzing unit for converting the value generated by said signal analyzing unit into digital data; and a display unit disposed on the housing of the wireless Hub for displaying the number of all the connected daughter units, the average value of the signal strength of all the connected daughter units or the value of signal strength of a certain daughter unit.

Abstract: Signal strength display device for wireless Hub, which is disposed on a mother unit or daughter unit of the wireless Hub. The signal strength display device includes: a wireless transceiver circuit; a signal analyzing unit connected to the output terminal of said wireless transceiver circuit for calculating and analyzing the strength of the radio signal received by said wireless transceiver circuit to generate a corresponding value; an analog-to-digital converting unit connected with said signal analyzing unit for converting the value generated by said signal analyzing unit into digital data; and a display unit disposed on the housing of the wireless Hub for displaying the number of all the connected daughter units, the average value of the signal strength of all the connected daughter units or the value of signal strength of a certain daughter unit.

Abstract: Gradually lighting/dimming wireless transmission indicator lamp used in a wireless data transmission apparatus. The wireless transmission indicator lamp includes at least one light emitting diode, a wireless transceiver circuit for receiving or transmitting radio signal and converting the received radio signal into digital pulse signal and a controlling circuit having an input terminal and at least one output terminal. The input terminal is connected with the wireless transceiver circuit. The output terminal is connected with the light emitting diode. The controlling circuit is controllable by the digital pulse signal to generate a slowly varying current for the light emitting diode, whereby the light emitting diode can gradually light and dim as human breath to indicate the connection state and transmission state of the wireless data transmission apparatus.

Abstract: Gradually lighting/dimming wireless transmission indicator lamp used in a wireless data transmission apparatus. The wireless transmission indicator lamp includes at least one light emitting diode, a wireless transceiver circuit for receiving or transmitting radio signal and converting the received radio signal into digital pulse signal and a controlling circuit having an input terminal and at least one output terminal. The input terminal is connected with the wireless transceiver circuit. The output terminal is connected with the light emitting diode. The controlling circuit is controllable by the digital pulse signal to generate a slowly varying current for the light emitting diode, whereby the light emitting diode can gradually light and dim as human breath to indicate the connection state and transmission state of the wireless data transmission apparatus.