Patents by Inventor Jian-Jang Chen

Jian-Jang Chen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20250031395
    Abstract: A heterojunction bipolar transistor and a base-collector grade layer. The heterojunction bipolar transistor includes a substrate, a sub-collector layer, a collector layer, a base layer, a base-collector grade layer and an emitter layer. The sub-collector layer is disposed on the substrate. The collector layer is disposed over the sub-collector layer. The base layer is disposed over the collector layer. The base-collector grade layer is disposed between the base layer and the collector layer, and includes at least two stacked periodic structures. Each periodic structure includes an In0.53Ga0.47As layer and an AlxGayIn1-x-yAs layer stacked on the In0.53Ga0.47As layer. The range of x is 0.04˜0.44, the range of y is 0.44˜0.04, and the thickness of the AlxGayIn1-x-yAs layer is 0.6 nm˜1.8 nm. The emitter layer is disposed on the base layer.
    Type: Application
    Filed: May 2, 2024
    Publication date: January 23, 2025
    Inventors: Jian-Jang HUANG, Yuh-Renn WU, Zih-Hao CHEN
  • Patent number: D468151
    Type: Grant
    Filed: January 14, 2002
    Date of Patent: January 7, 2003
    Assignee: Hens Specialty Co., Ltd.
    Inventors: Yuan-Hung Yeh, Yi-Ming Yang, Jian-Jang Chen
  • Patent number: D647981
    Type: Grant
    Filed: June 10, 2011
    Date of Patent: November 1, 2011
    Assignee: Healthstream Taiwan Inc.
    Inventor: Jian Jang Chen