Abstract: A heterojunction bipolar transistor and a base-collector grade layer. The heterojunction bipolar transistor includes a substrate, a sub-collector layer, a collector layer, a base layer, a base-collector grade layer and an emitter layer. The sub-collector layer is disposed on the substrate. The collector layer is disposed over the sub-collector layer. The base layer is disposed over the collector layer. The base-collector grade layer is disposed between the base layer and the collector layer, and includes at least two stacked periodic structures. Each periodic structure includes an In0.53Ga0.47As layer and an AlxGayIn1-x-yAs layer stacked on the In0.53Ga0.47As layer. The range of x is 0.04˜0.44, the range of y is 0.44˜0.04, and the thickness of the AlxGayIn1-x-yAs layer is 0.6 nm˜1.8 nm. The emitter layer is disposed on the base layer.

Abstract: Methods, systems, and devices are disclosed for detecting molecular interactions.

Abstract: Methods, systems, and devices are disclosed for detecting molecular interactions.

Abstract: A semiconductor device comprises a substrate, a patterned conductive layer, a first transistor structure and a second transistor structure. The patterned conductive layer is formed on the substrate. The first transistor structure includes a first source, a first gate and a first drain and is electrically connected to the patterned conductive layer by flip-chip bonding. The second transistor structure includes a second source, a second gate and a second drain and is electrically connected to the patterned conductive layer by flip-chip bonding. The first gate is electrically connected to the second source through the patterned conductive layer, and the first source is electrically connected to the second drain through the patterned conductive layer.

Abstract: A semiconductor device comprises a substrate, a patterned conductive layer, a first transistor structure and a second transistor structure. The patterned conductive layer is formed on the substrate. The first transistor structure includes a first source, a first gate and a first drain and is electrically connected to the patterned conductive layer by flip-chip bonding. The second transistor structure includes a second source, a second gate and a second drain and is electrically connected to the patterned conductive layer by flip-chip bonding. The first gate is electrically connected to the second source through the patterned conductive layer, and the first source is electrically connected to the second drain through the patterned conductive layer.

Abstract: A biosensor with a dual gate structure is disclosed herein. The biosensor comprises: a transistor, a sensing pad, and a plurality of nanostructures. The sensing pad has a conductive area working as another gate and neighboring to the channel layer of the transistor, and a sensing area extended outward from the conductive area to be far away from the channel layer of the transistor, wherein the gate and the conductive area of the sensing pad are separated from each other by the channel layer. The plurality of nanostructures are utilized to bind a first protein to generate a drain current value, when the first protein is combined with the target protein and another drain current value is generated, whereby a variation between the two drain current values is calculated to obtain the concentration of the target protein in the protein solution.

Abstract: An oxide semiconductor thin-film transistor, comprising: a source electrode and a drain electrode formed on a substrate; a composite semiconductor active layer formed between the source electrode and the drain electrode; a gate dielectric layer formed on the source electrode, the composite semiconductor active layer and the drain electrode; and a gate electrode formed on the gate dielectric layer and corresponding to the composite semiconductor active layer; wherein the composite semiconductor active layer comprises a low carrier-concentration first oxide semiconductor layer and a high carrier-concentration second oxide semiconductor layer.

Abstract: A structure of a solar cell. The structure of the solar cell includes a substrate, a graded layer and a semiconductor layer. The graded layer is disposed on the substrate. The graded layer is made from materials including the first material and the second material, and includes at least one thin film. One of the at least one thin film includes a mixture of at least the first material and the second material at a mixture ratio. The mixture forms a bandgap of the at least one thin film. The semiconductor layer is disposed on the graded layer.

Abstract: A structure of a solar cell is provided. The structure of the solar cell includes a substrate, a base and a plurality of nanostructures. The base is disposed on the substrate. The nanostructures are disposed on a surface of the base, or a surface of the base includes the nanostructures, so as to increase light absorption of the structure.

Abstract: A method for controlling the color contrast of a multi-wavelength light-emitting diode (LED) made according to the present invention is disclosed. The present invention includes at least the step of increasing the junction temperature of a multi-quantum-well LED, such that holes are distributed in a deeper quantum-well layer of the LED to increase luminous intensity of the deeper quantum-well layer, thereby controlling the relative intensity ratios of the multiple wavelengths emitted by the LED. The step of increasing junction temperature of the multi-quantum-well LED is achieved either by controlling resistance through modulating thickness of a p-type electrode layer of the LED or by modifying the mesa area size to control its relative heat radiation surface area.

Abstract: An oxide semiconductor thin-film transistor, comprising: a source electrode and a drain electrode formed on a substrate; a composite semiconductor active layer formed between the source electrode and the drain electrode; a gate dielectric layer formed on the source electrode, the composite semiconductor active layer and the drain electrode; and a gate electrode formed on the gate dielectric layer and corresponding to the composite semiconductor active layer; wherein the composite semiconductor active layer comprises a low carrier-concentration first oxide semiconductor layer and a high carrier-concentration second oxide semiconductor layer.

Abstract: A producing method of poly-wavelength light-emitting diode of utilizing nano-crystals and the light-emitting device thereof includes growing and processing a multiple-quantum-well layer based on stacking the mixture of at least two kinds of quantum wells to produce a two-wavelength light-emitting diode. Then, attaching nano-crystals on the two-wavelength light-emitting diode to transfer one of the wavelengths of the two-wavelength light-emitting diode to produce a poly-wavelength light-emitting diode. The device of the present invention can emit blue, green and red lights to produce white light.

Abstract: A method and structure for manufacturing long-wavelength visible light-emitting diode (LED) using the prestrained growth effect comprises the following steps: Growing a strained low-indium-content InGaN layer on the N-type GaN layer, and then growing a high-indium-content InGaN/GaN single- or multiple-quantum-well light-emitting structure on the low-indium-content InGaN layer to enhance the indium content of the high-indium quantum wells and hence to elongate the emission wavelength of the LED. The method of the invention can elongate emission wavelength of the LED by more than 50 nm (nanometer) such that an originally designated green LED can emit red light or orange light without influencing other electrical properties.

Abstract: A method for controlling the color contrast of a multi-wavelength light-emitting diode (LED) made according to the present invention is disclosed. The present invention includes at least the step of increasing the junction temperature of a multi-quantum-well LED, such that holes are distributed in a deeper quantum-well layer of the LED to increase luminous intensity of the deeper quantum-well layer, thereby controlling the relative intensity ratios of the multiple wavelengths emitted by the LED. The step of increasing junction temperature of the multi-quantum-well LED is achieved either by controlling resistance through modulating thickness of a p-type electrode layer of the LED or by modifying the mesa area size to control its relative heat radiation surface area.

Abstract: A circuit and a method for eliminating interference introduced from an image channel into a desired channel is described. The circuit includes a splitter and an adder. The splitter generates signals split from a received signal having frequency components within the desired and image channel. The adder adds together the signals output from the splitter. The circuit can be used in an TV tuner.