Abstract: An etchant is utilized to remove a semiconductor material. In some embodiments an oxidizer is added to the etchant in order to react with surrounding semiconductor material and form a protective layer. The protective layer is utilized to help prevent damage that could occur from the other components within the etchant.

Abstract: A semiconductor device and method of manufacture are provided. After a patterning of a middle layer, the middle layer is removed. In order to reduce or prevent damage to other underlying layers exposed by the patterning of the middle layer and intervening layers, an inhibitor is included within an etching process in order to inhibit the amount of material removed from the underlying layers.

Abstract: An etchant is utilized to remove a semiconductor material. In some embodiments an oxidizer is added to the etchant in order to react with surrounding semiconductor material and form a protective layer. The protective layer is utilized to help prevent damage that could occur from the other components within the etchant.

Abstract: A method of manufacturing a semiconductor device includes exposing a material to a semi-aqueous etching solution. The semi-aqueous etching solution comprises a solvent which chelates with the material and acts as a catalyst between the etching driving force and the material. As such, the etching driving force may be used to remove the material.

Abstract: A method of manufacturing a semiconductor device includes exposing a material to a semi-aqueous etching solution. The semi-aqueous etching solution comprises a solvent which chelates with the material and acts as a catalyst between the etching driving force and the material. As such, the etching driving force may be used to remove the material.

Abstract: A semi-aqueous wet clean system and method for removing carbon-containing silicon material (e.g., plasma residue) or nitrogen-containing silicon material (e.g., plasma residue) includes a hydroxyl-terminated organic compound, a diol, and a fluoride ion donor material. The system is configured to protect silicon oxide and amorphous silicon during a post-dry-etch wet clean. The wet clean system is configured to selectively remove carbon-containing or nitrogen-containing plasma residue. pH of the wet clean system can be modified to tune selectivity for removal of carbon-containing or nitrogen-containing plasma residues. As a result, positive TEOS recession of less than about 3 nanometers may be achieved. Additionally, the wet clean system can be adapted for reclamation and subsequent reuse.

Abstract: For a metal gate replacement integration scheme, the present disclosure describes removing a polysilicon gate electrode with a highly selective wet etch chemistry without damaging surrounding layers. For example, the wet etch chemistry can include one or more alkaline solvents with a steric hindrance amine structure, a buffer system that includes tetramethylammonium hydroxide (TMAH) and monoethanolamine (MEA), one or more polar solvents, and water.

Abstract: A method includes forming a tri-layer. The tri-layer includes a bottom layer; a middle layer over the bottom layer; and a top layer over the middle layer. The top layer includes a photo resist. The method further includes removing the top layer; and removing the middle layer using a chemical solution. The chemical solution is free from potassium hydroxide (KOH), and includes at least one of a quaternary ammonium hydroxide and a quaternary ammonium fluoride.

Abstract: A method of manufacturing a semiconductor device includes exposing a material to a semi-aqueous etching solution. The semi-aqueous etching solution comprises a solvent which chelates with the material and acts as a catalyst between the etching driving force and the material. As such, the etching driving force may be used to remove the material.

Abstract: For a metal gate replacement integration scheme, the present disclosure describes removing a polysilicon gate electrode with a highly selective wet etch chemistry without damaging surrounding layers. For example, the wet etch chemistry can include one or more alkaline solvents with a steric hindrance amine structure, a buffer system that includes tetramethylammonium hydroxide (TMAH) and monoethanolamine (MEA), one or more polar solvents, and water.

Abstract: A semi-aqueous wet clean system and method for removing carbon-containing silicon material (e.g., plasma residue) or nitrogen-containing silicon material (e.g., plasma residue) includes a hydroxyl-terminated organic compound, a diol, and a fluoride ion donor material. The system is configured to protect silicon oxide and amorphous silicon during a post-dry-etch wet clean. The wet clean system is configured to selectively remove carbon-containing or nitrogen-containing plasma residue. pH of the wet clean system can be modified to tune selectivity for removal of carbon-containing or nitrogen-containing plasma residues. As a result, positive TEOS recession of less than about 3 nanometers may be achieved. Additionally, the wet clean system can be adapted for reclamation and subsequent reuse.

Abstract: A semiconductor device and method of manufacture are provided. After a patterning of a middle layer, the middle layer is removed. In order to reduce or prevent damage to other underlying layers exposed by the patterning of the middle layer and intervening layers, an inhibitor is included within an etching process in order to inhibit the amount of material removed from the underlying layers.

Abstract: For a metal gate replacement integration scheme, the present disclosure describes removing a polysilicon gate electrode with a highly selective wet etch chemistry without damaging surrounding layers. For example, the wet etch chemistry can include one or more alkaline solvents with a steric hindrance amine structure, a buffer system that includes tetramethylammonium hydroxide (TMAH) and monoethanolamine (MEA), one or more polar solvents, and water.

Abstract: A method for the recovery of copper, indium, gallium, and selenium is provided. The method includes steps of using a mixed solution containing a hydrochloric acid and hydrogen peroxide to dissolve the copper, indium, gallium, and selenium. After using the hydrazine to separate the selenium out, the copper is reduced by indium metal. Later, a combination of a supported liquid membrane (SLM) and a strip dispersion solution separates the gallium from the indium. The acid performed in all the steps of the method is hydrochloric acid. Therefore, the copper, indium, gallium, and selenium can be separated one by one in a single production line without changing the solution during the operation process, thereby simplifying the process, shortening the operation time and lowering the manufacture cost.

Abstract: The present invention provides a novel process for the removal and recovery of gallium from a feed solution containing the gallium and copper. The process of the present invention utilizes a combination of a supported liquid membrane (SLM) and a strip dispersion to improve extraction of gallium while increasing membrane stability and decreasing processing costs. This novel process selectively removes gallium from feed solution containing the gallium and copper.