Abstract: Provides a method for producing aluminum oxide powder by electrochemical dissolving aluminum salt, comprise: (A) providing an electrochemical device with an aluminum material as an anode and an acidic solution as an electrolyte; (B) accelerating the dissolution of the aluminum material by current pulse method to form an acidic aluminum salt solution; (C) neutralizing the acidic aluminum salt solution with a basic solution to form an aluminum hydroxide sol; (D) adding an additive in the aluminum hydroxide sol, filtering the aluminum hydroxide sol and drying to obtain aluminum hydroxide powder; (E) roasting the aluminum hydroxide powder to form micron scale ?-aluminum oxide powder. Combines the acidic aluminum salt method and the electrochemical dissolution method to improve the dissolving rate of the aluminum material and increase the output efficiency of the acidic aluminum salt, and obtaining micron scale ?-aluminum oxide powder.

Abstract: A method of evaluating microwave characteristics includes the steps of: (A) measuring thermal diffusion features and microwave characteristics of at least three mode samples to obtain at least three data points, wherein the mode samples include identical constituents but at different ratios thereof; (B) obtaining a mathematical relation between the data points by linear regression; (C) measuring a thermal diffusion feature of a sample under test, wherein the sample under test and the mode samples include identical constituents; and (D) substituting the thermal diffusion feature of the sample under test into the mathematical relation to evaluate a microwave characteristic of the sample under test. The method is applicable to a ceramic material to evaluate microwave characteristics of the ceramic material.

Abstract: The present invention provides a switching component of a directly flat-attached active frequency selective surface (AFSS) and fabricating method thereof. The present invention utilizes P-type and N-type thin film materials to fabricate a PN diode switching component capable of adjusting a resonance frequency of the AFSS, such that the AFSS together with the switching component could be integrally fabricated into a single thin film. Therefore, by utilizing a stepwise coating method to fabricate each layer with corresponding material, an equivalent length of a metal pattern could be adjusted, thereby changing the resonance frequency of the AFSS.

Abstract: The present invention adopts an aluminum nitride substrate with great heat dissipation, great thermal conductivity, high electrical insulation, long service life, corrosion resistance, high temperature resistance, and stable physical characteristics. A high-quality zinc oxide film with a wide energy gap is fabricated on the aluminum nitride substrate by magnetron radio frequency (RF) sputtering. Compared with general vapor deposition, chemical vapor deposition and hydrothermal, the magnetron RF sputtering grows the high-quality zinc oxide film with few defects. The zinc oxide film with few defects concentration is an important key technology for short-wavelength optoelectronic devices, which decrease leakage currents of the optoelectronic devices, reduces flicker noise, and further improves its UV-visible rejection ratio.

Abstract: The present invention adopts an aluminum nitride substrate with great heat dissipation, great thermal conductivity, high electrical insulation, long service life, corrosion resistance, high temperature resistance, and stable physical characteristics. A high-quality zinc oxide film with a wide energy gap is fabricated on the aluminum nitride substrate by magnetron radio frequency (RF) sputtering. Compared with general vapor deposition, chemical vapor deposition and hydrothermal, the magnetron RF sputtering grows the high-quality zinc oxide film with few defects. The zinc oxide film with few defects concentration is an important key technology for short-wavelength optoelectronic devices, which decrease leakage currents of the optoelectronic devices, reduces flicker noise, and further improves its UV-visible rejection ratio.

Abstract: The present invention provides a switching component of a directly flat-attached active frequency selective surface (AFSS) and fabricating method thereof. The present invention utilizes P-type and N-type thin film materials to fabricate a PN diode switching component capable of adjusting a resonance frequency of the AFSS, such that the AFSS together with the switching component could be integrally fabricated into a single thin film. Therefore, by utilizing a stepwise coating method to fabricate each layer with corresponding material, an equivalent length of a metal pattern could be adjusted, thereby changing the resonance frequency of the AFSS.

Abstract: A method of producing a secondary lens with hollow nano structures comprises the following steps (a) forming a polycrystalline seed layer on the surface of a lens; (b) growing a plurality of nano-rod structures over the polycrystalline seed layer in a random arrangement; (c) removing the portion of the seed layer where the nano-rod structure does not grow so that the surface of the lens therebeneath is exposed to outside; (d) sputtering a ceramic material layer over the plurality of nano-rod structures and the exposed surface portion of the lens; (e) removing the plurality of nano-rod structures and leaving a ceramic material layer having a plurality of hollow nano-rod structures in a random arrangement. A layer with hollow nano structures is formed on the surface of a lens wherein the hollow nano structures have the effect of scattering light and can improve the uniform illuminance of a secondary lens.

Abstract: A method of producing a secondary lens with hollow nano structures comprises the following steps (a) forming a polycrystalline seed layer on the surface of a lens; (b) growing a plurality of nano-rod structures over the polycrystalline seed layer in a random arrangement; (c) removing the portion of the seed layer where the nano-rod structure does not grow so that the surface of the lens therebeneath is exposed to outside; (d) sputtering a ceramic material layer over the plurality of nano-rod structures and the exposed surface portion of the lens; (e) removing the plurality of nano-rod structures and leaving a ceramic material layer having a plurality of hollow nano-rod structures in a random arrangement. A layer with hollow nano structures is formed on the surface of a lens wherein the hollow nano structures have the effect of scattering light and can improve the uniform illuminance of a secondary lens.

Abstract: A method of manufacturing an epitaxiable heat-dissipating substrate comprises the steps of (A) forming a roughened surface on a substrate made of a polycrystalline or amorphous material with a high thermal conductivity coefficient; (B) forming a flat layer on the roughened surface; and (C) forming a buffer layer on the flat layer. The flat layer reduces the surface roughness of the substrate, and then the buffer layer functions as a base for epitaxial growth, thereby being directly applicable to production of semiconductor devices which are flat and capable of isotropic epitaxial growth.

Abstract: Disclosed is an aluminum nitride electrostatic chuck, comprising: a positioning electrostatic chuck and a carrier structure. The positioning electrostatic chuck includes a groove structure layer, a dielectric insulation layer, and a heat conduction layer. In the groove structure layer on the surface of the electrostatic chuck is provided with cooling gas channels, to facilitate control of the temperature distribution of a wafer. The electrostatic chuck is especially designed for use in a semiconductor manufacturing process of high temperature and high plasma power density. The dielectric insulation layer is provided with embedded electrodes, such that voltage conversion can be carried out to effect wafer absorption/release. The cooling gas channels are used to control temperature of the absorbed wafer, by means of heat conduction of aluminum nitride electrostatic chuck. Therefore, wafer temperature distribution is controlled through aspect ratio and geometry of cooling gas channel.

Abstract: Disclosed is an aluminum nitride electrostatic chuck, comprising: a positioning electrostatic chuck and a carrier structure. The positioning electrostatic chuck includes a groove structure layer, a dielectric insulation layer, and a heat conduction layer. In the groove structure layer on the surface of the electrostatic chuck is provided with cooling gas channels, to facilitate control of the temperature distribution of a wafer. The electrostatic chuck is especially designed for use in a semiconductor manufacturing process of high temperature and high plasma power density. The dielectric insulation layer is provided with embedded electrodes, such that voltage conversion can be carried out to effect wafer absorption/release. The cooling gas channels are used to control temperature of the absorbed wafer, by means of heat conduction of aluminum nitride electrostatic chuck. Therefore, wafer temperature distribution is controlled through aspect ratio and geometry of cooling gas channel.

Abstract: A substrate of semiconductor is formed by a method including preparing two aluminum nitride (AlN) substrates; forming a first buffer layer on a surface of each AlN substrate; forming a second buffer layer on a free surface of each first buffer layer; and providing an oxygen free copper (OFC) layer to be securely sandwiched between the second buffer layers through a sintering process. Said substrate is a sandwiched structure and is able to be directly carried out coating process to grow semiconductor device thereon.

Abstract: A method of preparing a heterogeneous stacked co-fired ceramic for use in an aluminum nitride-based electrostatic chuck includes providing a first aluminum nitride blank layer; applying a metal ink to the first aluminum nitride blank layer to form thereon an electrostatic electrode layer by screen printing, wherein the metal ink mainly contains a metal of high melting point; stacking a second aluminum nitride blank layer on the electrostatic electrode layer; laminating the first aluminum nitride blank layer, the electrostatic electrode layer, and the second aluminum nitride blank layer (collectively known as a heterogeneous ceramic) together; and co-firing the laminated heterogeneous ceramic in accordance with a sintering temperature rising curve to prepare the heterogeneous stacked co-fired ceramic characterized by reduced differences in sintering shrinkage ratio between the electrostatic electrode and aluminum nitride blank and enhanced strength and adhesion of the interface between the electrostatic electr