Abstract: A non-volatile memory including the following elements is provided. A first conductive layer and a second conductive layer are disposed on a substrate and separated from each other. A patterned hard mask layer is disposed on the first conductive layer and exposes a sharp tip of the first conductive layer. A third conductive layer is disposed on the substrate at one side of the first conductive layer away from the second conductive layer. The third conductive layer is located on a portion of the first conductive layer and covers the sharp tip, and the third conductive layer and the first conductive layer are isolated from each other. A first doped region is disposed in the substrate below the third conductive layer. A second doped region is disposed in the substrate at one side of the second conductive layer away from the first conductive layer.

Abstract: A non-volatile memory including the following elements is provided. A first conductive layer and a second conductive layer are disposed on a substrate and separated from each other. A patterned hard mask layer is disposed on the first conductive layer and exposes a sharp tip of the first conductive layer. A third conductive layer is disposed on the substrate at one side of the first conductive layer away from the second conductive layer. The third conductive layer is located on a portion of the first conductive layer and covers the sharp tip, and the third conductive layer and the first conductive layer are isolated from each other. A first doped region is disposed in the substrate below the third conductive layer. A second doped region is disposed in the substrate at one side of the second conductive layer away from the first conductive layer.