Abstract: Provided is a method for controlling delivery of a video stream of a live-stream room, and corresponding server and mobile terminal. The method includes steps of: receiving a connection request initiated by an anchor user of the live-stream room from a first terminal and including pre-protocol information outputted by a second terminal; sending, in response to the connection request, a first live video stream uploaded by the first terminal down to the second terminal; and receiving a third live video stream uploaded by the second terminal and formed by combining at least one of a second live video stream and the first live video stream, and delivering the third live video stream to a member user in the live-stream room.

Abstract: Provided is a method for controlling delivery of a video stream of a live-stream room, and corresponding server and mobile terminal. The method includes steps of: receiving a connection request initiated by an anchor user of the live-stream room from a first terminal and including pre-protocol information outputted by a second terminal; sending, in response to the connection request, a first live video stream uploaded by the first terminal down to the second terminal; and receiving a third live video stream uploaded by the second terminal and formed by combining at least one of a second live video stream and the first live video stream, and delivering the third live video stream to a member user in the live-stream room.

Abstract: A method for preparing TEM sample, comprising the following steps: providing a sample with two pits and a failure region between the two pits, the failure region comprising a semiconductor device; milling the first surface of the failure region, till the cross section of the semiconductor device is exposed; etching the first surface of the failure region; cleaning the sample; milling the second surface of the failure region, till the failure region can be passed by electron beam. A sample can be prepared for a high resolution TEM through above steps. When the sample is observed, it is easy to distinguish the lightly doped drain, source/drain regions from the silicon substrate and observe the pattern and defects in the lightly doped drain, source/drain regions clearly; in addition, it is easy to distinguish the BPSG from the non-doped silicon dioxide in the failure region.

Abstract: A method for preparing TEM sample, comprising the following steps: providing a sample with two pits and a failure region between the two pits, the failure region comprising a semiconductor device; milling the first surface of the failure region, till the cross section of the semiconductor device is exposed; etching the first surface of the failure region; cleaning the sample; milling the second surface of the failure region, till the failure region can be passed by electron beam. A sample can be prepared for a high resolution TEM through above steps. When the sample is observed, it is easy to distinguish the lightly doped drain, source/drain regions from the silicon substrate and observe the pattern and defects in the lightly doped drain, source/drain regions clearly; in addition, it is easy to distinguish the BPSG from the non-doped silicon dioxide in the failure region.