Abstract: An automatic forming machine for pulp molding product is disclosed. Through an innovative design to ensure stable rise and fall of the hot pressing lower mold, the hot forming zone is optimized. The invention has the following characteristics: On the bottom side of the hot pressing lower mold, a supporting arm is extended downward in each of the four directions. On the supporting arm, a sliding block is fixed. A penetrating hole slot is configured on a base plate at a lower position inside the working space of the hot forming zone at each of the positions corresponding to the supporting arms. The adjacent outer sides of the base plate corresponding to the supporting arms are respectively fixed with a supporting frame. The column surfaces of the supporting frame on the front and rear side are respectively connected with a supporting plate body. The supporting plate body is fixed with a guide rail.

Abstract: Some embodiments of the disclosure provide a method for fabricating a semiconductor device. The method comprises: providing a semiconductor stack comprising a substrate, a first nitride semiconductor layer on the substrate, and a second nitride semiconductor layer on the first nitride semiconductor layer, wherein the second nitride semiconductor layer having a bandgap greater than that of the first nitride semiconductor layer; forming a first contact on the first nitride semiconductor layer; forming a spacer attached to a sidewall of the first contact; and forming a second contact after the spacer is formed.

Abstract: Some embodiments of the disclosure provide a semiconductor device. The semiconductor device comprises: a substrate; a first nitride semiconductor layer disposed on the substrate; a second nitride semiconductor layer disposed on the first nitride semiconductor layer and having a bandgap greater than that of the first nitride semiconductor layer; an ohmic contact disposed on the first nitride semiconductor layer; and a spacer disposed adjacent to a sidewall of the ohmic contact.

Abstract: A nitride-based semiconductor device includes a first nitride-based semiconductor layer, a second nitride-based semiconductor layer, a doped nitride-based semiconductor layer, a gate electrode, and a protection layer. The doped nitride-based semiconductor layer has a first portion and a second portion over the first portion and narrower than the first portion. The gate electrode is disposed over the doped nitride-based semiconductor layer and narrower than the first portion. The protection layer is disposed over the doped nitride-based semiconductor layer and the gate electrode. A top surface of the first portion of the doped nitride-based semiconductor layer is covered by the protection layer, and a sidewall of the first portion of the doped nitride-based semiconductor layer is free from coverage by the protection layer.

Abstract: A nitride-based semiconductor device includes a first nitride-based semiconductor layer, a second nitride-based semiconductor layer, a nitride-based layer, and a plurality of gate electrodes. The second nitride-based semiconductor layer is disposed on the first nitride-based semiconductor layer and has a bandgap greater than a bandgap of the first nitride-based semiconductor layer. The nitride-based layer is disposed over the second nitride-based semiconductor layer and extends along a first direction to have a strip profile. The gate electrodes are disposed over the nitride-based layer and arranged along the first direction such that at least two of the gate electrodes are separated from each other.

Abstract: Some embodiments of the disclosure provide a semiconductor device. The semiconductor device comprises: a substrate; a first nitride semiconductor layer disposed on the substrate; a second nitride semiconductor layer disposed on the first nitride semiconductor layer and having a bandgap greater than that of the first nitride semiconductor layer; an ohmic contact disposed on the first nitride semiconductor layer; and a spacer disposed adjacent to a sidewall of the ohmic contact.

Abstract: The present invention relates to the field of biomedical signal processing, specifically, a device and method of implementation for enhancing the accuracy of fetal heart rate acceleration data recognition.

Abstract: The present invention relates to the field of biomedical signal processing, specifically, a device and method of implementation for enhancing the accuracy of fetal heart rate acceleration data recognition.

Abstract: A device and method for improving the identification accuracy of fetal heart rate deceleration. The method includes: collecting fetal heart rate data (101); performing baseline identification on the collected fetal heart rate data (102); preprocessing the collected fetal heart rate data (103); performing deceleration identification on the preprocessed fetal heart rate data according to preset deceleration judgment standards and a fetal heart rate data baseline to obtain a decelerated data segment (104); and calculating a deceleration attribute value of each decelerated data segment (105), and outputting the decelerated data segment and calculation result (106).

Abstract: An apparatus and method for automatically identifying FHR baseline includes collecting FHR data within a preset duration to obtain an FHR data sequence h?(n); preprocessing the collected FHR data sequence h?(n) to obtain a corresponding FHR data sequence during the preprocessing; selecting a primary dominant peak value according to the frequency distribution of the corresponding FHR data sequence during the preprocessing; and identifying a dynamic baseline according to the corresponding FHR data sequence and the primary dominant peak value during the preprocessing to obtain the dynamic baseline, and display and print the dynamic baseline. The apparatus and method effectively prevents the impact caused by regular change of the FHR to the baseline solution, and accurately reflects the FHR baseline and changes thereof of a fetus under different conditions.

Abstract: A device and method for improving the identification accuracy of fetal heart rate deceleration. The method includes: collecting fetal heart rate data (101); performing baseline identification on the collected fetal heart rate data (102); preprocessing the collected fetal heart rate data (103); performing deceleration identification on the preprocessed fetal heart rate data according to preset deceleration judgment standards and a fetal heart rate data baseline to obtain a decelerated data segment (104); and calculating a deceleration attribute value of each decelerated data segment (105), and outputting the decelerated data segment and calculation result (106).

Abstract: An apparatus and method for automatically identifying FHR baseline includes collecting FHR data within a preset duration to obtain an FHR data sequence h?(n); preprocessing the collected FHR data sequence h?(n) to obtain a corresponding FHR data sequence during the preprocessing; selecting a primary dominant peak value according to the frequency distribution of the corresponding FHR data sequence during the preprocessing; and identifying a dynamic baseline according to the corresponding FHR data sequence and the primary dominant peak value during the preprocessing to obtain the dynamic baseline, and display and print the dynamic baseline. The apparatus and method effectively prevents the impact caused by regular change of the FHR to the baseline solution, and accurately reflects the FHR baseline and changes thereof of a fetus under different conditions.